Insulating film forming method, insulating film forming apparatus, and plasma film forming apparatus

Abstract

An insulating film is formed with a plasma film forming apparatus which includes a vacuum vessel with an electromagnetic wave incident face F, first gas injection holes made in the vacuum vessel, and second gas injection holes made in the vacuum vessel farther away from the electromagnetic wave incident face F than the first gas injection holes. For example, a first gas is introduced from a position whose distance from the electromagnetic wave incident face F is less than 10 mm into the vacuum vessel. A second gas including an organic silicon compound is introduced from a position whose distance from the electromagnetic wave incident face is 10 mm or more into the vacuum vessel.

1 . A plasma film forming apparatus comprising: 
 an electromagnetic wave source which outputs an electromagnetic wave for producing plasma;    a processing vessel which has an electromagnetic wave incident face connected to the electromagnetic wave source via an electromagnetic wave supply waveguide;    a first gas introducing openings which are made in the processing vessel and supply a first gas as plasma producing gas; and    a second gas introducing openings which are provided farther away from the electromagnetic wave incident face than the first gas introducing openings and supply gas including at least one of organic silicon compound gas and organic metallic compound gas and at least one of oxygen gas and rare gas.    
   
   
       2 . The plasma film forming apparatus according to  claim 1 , wherein the first gas introducing openings are provided in a position less than 10 mm away from the electromagnetic wave incident face and the second gas introducing openings are provided 10 mm or more away from the electromagnetic wave incident face.  
   
   
       3 . The plasma film forming apparatus according to  claim 1 , wherein the second gas introducing openings are provided in a ring-shaped member formed so as to have a outer shape larger than the outer edge of an object to be processed.  
   
   
       4 . The plasma film forming apparatus according to  claim 2 , wherein the ring-shaped member is circular when the outer shape of the object to be processed is circular and is square when the outer shape is square.  
   
   
       5 . An insulating film forming apparatus comprising: 
 a processing vessel which has an electromagnetic wave incident face that an electromagnetic wave enters and enables a substrate to be processed to be provided therein;    a first gas supply system which has a first gas introducing portion that introduces a first gas including at least one of rare gas and oxygen gas into the processing vessel and which is provided in the processing vessel; and    a second gas supply system which has a second gas introducing portion that introduces a second gas including an organic silicon compound or an organic metallic compound into the processing vessel and which is provided in the processing vessel, the distance between the first gas introducing portion and the electromagnetic wave incident face being set to less than 10 mm, the distance between the second gas introducing portion and the electromagnetic wave incident face being set to 10 mm or more, and surface-wave plasma being capable of being produced using the first and second gases in the processing vessel.    
   
   
       6 . The insulating film forming apparatus according to  claim 5 , wherein the antenna has one or more waveguide slot antennas.  
   
   
       7 . The insulating film forming apparatus according to  claim 6 , wherein a plurality of waveguide slot antennas are provided side by side so as to face the outer surfaces of the dielectric members.