Silicon carbide single crystal and method and apparatus for producing the same

Abstract

A method of producing a silicon carbide single crystal in which a sublimation raw material 40 is accommodated at the side of vessel body 12 in a graphite crucible 10 , placing a seed crystal of a silicon carbide single crystal at the side of cover body 11 of the graphite crucible 10 , the sublimation raw material 40 is sublimated by a first induction heating coil 21 placed at the side of sublimation raw material 40 , a re-crystallization atmosphere is form by a second induction heating coil 20 placed at the side of cover body 11 so that the sublimation raw material 40 sublimated by the first induction heating coil 21 is re-crystallizable only in the vicinity of the seed crystal of a silicon carbide single crystal, and the sublimation raw material 40 is re-crystallized on the seed crystal of a silicon carbide single crystal, and a silicon carbide single crystal 60 is grown while keeping the whole surface of its growth surface in convex shape through the all growth processes. A high quality silicon carbide single crystal with large diameter excellent in dielectric breakdown property, heat resistance, radiation resistance and the like, suitable for electronic and optical devices and the like, and showing no contamination of polycrystals and polymorphs, no defect of micropipes and the like can be produced efficiently without cracking and the like.

1 - 30 . (canceled)  
   
   
       31 . An apparatus for generating a silicon carbide single crystal in which a sublimation raw material being sublimated is re-crystallized to grow a silicon carbide single crystal, comprising: 
 a crucible provided with a vessel body to accommodate a sublimation raw material and a cover body attachable to and detachable from the vessel body and, when the cover body is installed on the vessel body and, when the cover body is installed on the vessel body, a seed crystal of a silicon carbide single crystal can be arranged at a surface facing the inside of the vessel body;    a first induction heating coil wound around the outer periphery of a part or the crucible when the sublimation raw material is accommodated, so as to form a sublimation atmosphere to enable sublimation of the sublimation raw material;    a second induction heating coil wound around the outer periphery of a part of a crucible where the seed crystal is placed, so as to form a re-crystallization atmosphere so that the sublimation raw material being sublimate by the first induction heating coil is re-crystallize only in the vicinity of the seed crystal of a silicon carbide single crystal, and re-crystallizing the sublimation raw material on the seed crystal of a silicon carbide single crystal; and    an interference preventing coli for providing the induction current and preventing Interference between the first heating coil and the second heating oil, placed between the first heating coil and the second heating oil.    
   
   
       32 . The apparatus of claim  1 , wherein the interference preventing coil is a coil through which cooling water can flow.  
   
   
       33 . The apparatus of claim  1 , wherein the crucible includes a lower end and an upper end.  
   
   
       34 . The apparatus of claim  1 , further comprising a quartz tube wherein the vessel is placed in the quartz tube.  
   
   
       35 . The apparatus of claim  1 , wherein an induction current flows through the Interference preventing coil, and the Interference preventing coil minimizes and prevents Interference between the first heating coil and the second heating coil, when an Induction heating is conducted by the first heating coil and the second heating coil simultaneously.