Method for dishing reduction and feature passivation in polishing processes

Abstract

Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a barrier layer material, depositing a second conductive material on the first conductive material by an electrochemical deposition technique, and polishing the second conductive material and the barrier layer material to a dielectric layer. In another aspect, a processing system is provided for forming a planarized layer on a substrate, the processing system including a computer based controller configured to cause the system to polish a first conductive material to a barrier layer material, deposit a second conductive material on the first conductive material by an electrochemical deposition technique, and polish the second conductive material and the barrier layer material to a dielectric layer.

1 . A processing system for forming a planarized layer on a substrate, comprising: 
 a processing platform having two or more processing stations, a loading station, and a substrate transfer device disposed above the processing stations and the loading station;    wherein at least one of the processing stations is adapted to polish a substrate surface;    wherein at least one of the processing stations is adapted to deposit a material by an electrochemical process; and    a computer based controller configured to cause the system to polish a first conductive material from the substrate surface to a barrier layer material, deposit a second conductive material on the first conductive material by an electrochemical deposition technique, and polish the second conductive material and the barrier layer material to at least the top surface of a dielectric layer.    
     
     
         2 . The processing system of  claim 1 , wherein the computer based controller is further configured to cause the system to perform an electroplating deposition technique, an electroless deposition technique, or an electrochemical mechanical plating process technique at the two or more processing stations adapted to deposit a material by an electrochemical process.  
     
     
         3 . The processing system of  claim 1 , wherein the computer based controller is further configured to cause the system to deposit the patching material to a thickness between about 25 Å and about 2000 Å.  
     
     
         4 . The processing system of  claim 1 , wherein the computer based controller is configured to cause the system to deposit a second conductive material on the first conductive material by an electrochemical deposition technique and polish the second conductive material and the barrier layer material to a top surface of the dielectric layer concurrently at the same processing station.  
     
     
         5 . A substrate processing chamber adapted for processing a substrate comprising: 
 a substrate support, comprising: 
 a substrate receiving surface;  
 a vacuum port;  
 vacuum grooves in communication with the vacuum port; and  
   a fluid source;    a fluid input coupled to the fluid source and adapted to deliver a processing fluid to a substrate disposed on the substrate receiving surface; and    a fluid output adapted to drain the processing fluid from the processing chamber.    
     
     
         6 . The substrate processing chamber of  claim 5 , wherein the substrate support is adapted for face-up processing.  
     
     
         7 . The substrate processing chamber of  claim 5 , wherein the substrate support is adapted to rotate.  
     
     
         8 . The substrate processing chamber of  claim 5 , further comprising a polishing head assembly comprising: 
 polishing media; and    a polishing media support.    
     
     
         9 . The substrate processing chamber of  claim 8 , further comprising an electrode contacting the polishing media or the polishing media support.  
     
     
         10 . The substrate processing chamber of  claim 9 , further comprising a spacer disposed between the electrode and the polishing media.  
     
     
         11 . The substrate processing chamber of  claim 8 , wherein the polishing media comprises a conductive polishing media.  
     
     
         12 . The substrate processing chamber of  claim 8 , wherein the polishing head assembly is adapted to rotate.  
     
     
         13 . The substrate processing chamber of  claim 8 , wherein the polishing head assembly has a smaller diameter than the substrate diameter.  
     
     
         14 . An electrochemical deposition system, comprising: 
 a mainframe having a mainframe wafer transfer robot;    a loading station disposed in connection with the mainframe;    one or more electrochemical processing cells disposed in connection with the mainframe, the one or more electrochemical processing cells comprising: 
 a substrate support, comprising: 
 a substrate receiving surface;  
 a vacuum port;  
 vacuum grooves in communication with the vacuum port; and  
 
 a fluid input coupled to an electrolyte supply and adapted to deliver an electrolyte to a substrate disposed on the substrate receiving surface; and  
 a fluid output adapted to drain the processing fluid from the processing chamber;  
   one or more polishing platens disposed in connection with the mainframe;    an electrolyte supply fluidly connected to the one or more electrochemical processing cells; and    one or more polishing fluid supplies connected to the one or more polishing platens.    
     
     
         15 . The system of  claim 14 , further comprising a polishing head assembly disposed adjacent the one or more electrochemical processing cell and comprising: 
 polishing media; and    a polishing media support    
     
     
         16 . The system of  claim 15 , further comprising an electrode contacting the polishing media or the polishing media support.  
     
     
         17 . The system of  claim 15 , further comprising a spacer disposed between the electrode and the polishing media.  
     
     
         18 . The system of  claim 14 , further comprising a system controller for controlling an electrochemical deposition process, an electrochemical removal process, a polishing process, or combinations thereof.  
     
     
         19 . The system of  claim 14 , further comprising a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe.  
     
     
         20 . The system of  claim 14 , further comprising a thermal anneal chamber disposed in connection with the loading station.