Microelectronic device fabricating method, integrated circuit, and intermediate construction

Abstract

A microelectronic device fabricating method includes providing a substrate having a beveled portion and forming a layer of structural material on the beveled portion. Some of the structural material can be removed from the beveled portion by anisotropic etching to form a device feature from the structural material. The device feature can be formed on the beveled portion as with a pair of spaced, adjacent barrier material lines that are substantially void of residual shorting stringers extending therebetween. Structural material can be removed from the beveled portion to form an edge defined feature on a substantially perpendicular edge of the substrate. The beveled portion and perpendicular edge can be part of a mandril. The mandril can be removed from the substrate after forming the edge defined feature.

1 - 67 . (canceled)  
   
   
       68 . A microelectronic device fabricating method comprising: 
 forming a resist mask pattern on a substrate, the resist pattern having at least one beveled portion at an edge of at least one opening in the resist pattern;    transferring the resist pattern to the substrate to form at least one beveled portion of the substrate;    forming a layer of structural material on at least the at least one beveled portion of the substrate; and    removing at least a portion of the structural material from the at least one beveled portion by anisotropic etching to form a sublithographic edge defined feature from the structural material.    
   
   
       69 . The method of  claim 68 , wherein the substrate comprises a layer of insulative material over a semiconductive wafer, the structural material being formed over the insulative material.  
   
   
       70 . The method of  claim 68 , wherein the bevel is less than or equal to about 45°.  
   
   
       71 . The method of  claim 68 , wherein the transferring the resist pattern forms a raised mandril from the substrate, the mandril having four edges, including two edges substantially perpendicular to a recessed portion of the substrate and two beveled edges, the structural material being formed over at least one beveled edge.  
   
   
       72 . The method of  claim 68 , wherein the removing of structural material comprises removing substantially all of the structural material from the at least one beveled portion but leaving at least a portion of the structural material on another portion of the substrate.  
   
   
       73 . The method of  claim 68 , wherein the structural material is conductive.  
   
   
       74 . A microelectronic device fabricating method comprising: 
 providing a layer of resist material on a substrate;    exposing the resist to actinic energy providing gradated exposure of a second resist region;    developing the resist to remove a first region, revealing the substrate, and a portion of the second region, without revealing the substrate, while leaving a third region in place to form a resist mask pattern on the substrate, wherein a beveled portion of the resist pattern forms in the second region;    transferring the resist pattern to the substrate to form at least one beveled portion of the substrate;    forming a layer of structural material on at least the at least one beveled portion of the substrate; and    removing at least a portion of the structural material from the at least one beveled portion by anisotropic etching to form a sublithographic edge defined feature from the structural material.    
   
   
       75 . The method of  claim 74 , wherein the substrate comprises a layer of insulative material over a semiconductive wafer, the structural material being formed over the insulative material.  
   
   
       76 . The method of  claim 74 , wherein the bevel is less than or equal to about 45°.  
   
   
       77 . The method of  claim 74 , wherein the transferring the resist pattern forms a raised mandril from the substrate, the mandril having four edges, including two edges substantially perpendicular to a recessed portion of the substrate and two beveled edges, the structural material being formed over at least one beveled edge.  
   
   
       78 . The method of  claim 74 , wherein the removing of structural material comprises removing substantially all of the structural material from the at least one beveled portion but leaving at least a portion of the structural material on another portion of the substrate.  
   
   
       79 . The method of  claim 74 , wherein the structural material is conductive.  
   
   
       80 . A microelectronic device fabricating method comprising: 
 forming a resist mask pattern on a substrate, the resist pattern having at least one beveled portion at an edge of at least one opening in the resist pattern;    transferring the resist pattern to the substrate to form at least one beveled portion of the substrate;    forming a layer of structural material on at least the at least one beveled portion of the substrate; and    etching at least a portion of the structural material from the at least one beveled portion by anisotropic etching to form a sublithographic edge defined feature from the structural material, the beveled portion minimizing extended etching to remove the portion of structural material, allowing better control of feature size and quality, and reducing damage and distortion of the edge defined feature.    
   
   
       81 . The method of  claim 80 , wherein the substrate comprises a layer of insulative material over a semiconductive wafer, the structural material being formed over the insulative material.  
   
   
       82 . The method of  claim 80 , wherein the bevel is less than or equal to about 45°.  
   
   
       83 . The method of  claim 80 , wherein the transferring the resist pattern forms a raised mandril from the substrate, the mandril having four edges, including two edges substantially perpendicular to a recessed portion of the substrate and two beveled edges, the structural material being formed over at least one beveled edge.  
   
   
       84 . The method of  claim 80 , wherein the removing of structural material comprises removing substantially all of the structural material from the at least one beveled portion but leaving at least a portion of the structural material on another portion of the substrate.  
   
   
       85 . The method of  claim 80 , wherein the structural material is conductive.