High dielectric constant composition and method of making same

Abstract

Dielectric material compositions comprising HfO 2 and a second compound are disclosed. The compositions are characterized by at least a part of the compositions being in a cubic crystallographic phase. Further, semiconductor based devices comprising such dielectric material compound and method for forming such compounds are disclosed.

1 - 19 . (canceled)  
     
     
         20 . A method for forming a dielectric layer on a substrate, the method comprising: 
 placing the substrate in a reaction chamber,    depositing a dielectric layer, the dielectric layer comprising a composition comprising HfO 2  and a second compound, and    subjecting the deposited dielectric layer to a temperature that is higher than the crystallization temperature of the composition, such that at least a portion of the composition is transformed from an amorphous phase to a cubic crystallographic phase.    
     
     
         21 . A method as recited in  claim 20 , wherein depositing comprises atomic layer deposition.  
     
     
         22 . A method as recited in  claim 20 , wherein the temperature is higher than 400 degrees C.  
     
     
         23 . A method as recited in  claim 20 , wherein the temperature is between 400 degrees C. and 1050degrees C.  
     
     
         24 . A method as recited in  claim 20 , wherein the substrate comprises an interfacial layer.  
     
     
         25 . A dielectric material composition comprising HfO 2  and a second compound, wherein the second compound is one of a metal oxide and a metal oxynitride, and wherein at least a part of the composition is in a cubic crystallographic phase  
     
     
         26 . The composition of  claim 25 , wherein the second compound is selected from the group consisting of SiO 2 , Y 2 O 3 , CeO 2 , MgO 2 , CaO, TaO 2 , La 2 O 3  and TiO 2 .  
     
     
         27 . The composition of  claim 25 , wherein the second compound comprises Al 2 O 3 .  
     
     
         28 . A dielectric material composition comprising HfO 2  and Al 2 O 3 , wherein at least a part of the composition is in a cubic crystallographic phase.  
     
     
         29 . The composition of  claim 28 , wherein the amount of the Al 2 O 3  in the composition is between 1 [mol] % and 50 [mol] %.