Fully integrated DC-to-DC regulator utilizing on-chip inductors with high frequency magnetic materials

Abstract

An fully integrated DC-to-DC switching converter having an inductor, where the inductor has magnetic material that may be amorphous CoZrTa, CoFeHfO, CoAlO, FeSiO, CoFeAlO, CoNbTa, CoZr, and other amorphous cobalt alloys. The magnetic material allows for a relatively high switching frequency. In one embodiment, the inductor has two sub-structures, where each of the two sub-structures are parallel to each other and each includes a conductor having upper and lower portions. The conductors of the two sub-structures are electrically connected to each other, and the upper and lower portions are arranged so that magnetic flux from one of the sub-structures couples with the magnetic flux from the other sub-structure so as to provide a relatively high inductance with small form factor. In another embodiment, the inductor is a simple conductor surrounded by high-frequency magnetic material. In both structures, oxide insulates the conductors from the magnetic material.

1 . A die comprising: 
 an inductor comprising magnetic material selected from the group consisting of amorphous CoZrTa, CoFeHfO, CoAlO, FeSiO, CoFeAlO, CoNbTa, CoZr, and other amorphous cobalt alloys;    a switch to energize the inductor; and    a switch controller to switch the switch ON and OFF at a frequency and with a duty cycle, wherein the frequency is greater than 10 MHz.    
   
   
       2 . The die as set forth in  claim 1 , wherein the frequency is greater than 100 MHz.  
   
   
       3 . The die as set forth in  claim 1 , wherein the frequency is greater than 1 GHz.  
   
   
       4 - 11 . (canceled)  
   
   
       12 . A die comprising a DC-to-DC switching converter, the converter comprising an inductor comprising: 
 magnetic material selected from the group consisting of amorphous CoZrTa, CoFeHfO, CoAlO, FeSiO, CoFeAlO, CoNbTa, CoZr, and other amorphous cobalt alloys;    a first sub-structure comprising a first conductor, the first conductor comprising upper portions and lower portions; and    a second sub-structure in electrical contact with the first conductor and comprising a second conductor, the second conductor comprising upper portions and lower portions;    wherein a magnetic flux due to a DC current flow in the inductor is such that the magnetic flux due to the DC current flow in the lower portions of the first conductor is aligned with the magnetic flux due to the DC current flow in the upper portions of the second conductor, and the magnetic flux due to the DC current flow in the upper portions of the first conductor is aligned with the magnetic flux due to the DC current flow in the lower portions of the second conductor.    
   
   
       13 . The die as set forth in  claim 12 , wherein the magnetic material comprises upper portions deposited above the upper portions of the first and second conductors, and comprises lower portions deposited above the lower portions of the first and second conductors.  
   
   
       14 . A die comprising a DC-to-DC switching converter, the converter comprising an inductor comprising: 
 magnetic material selected from the group consisting of amorphous CoZrTa, CoFeHfO, CoAlO, FeSiO, CoFeAlO, CoNbTa, CoZr, and other amorphous cobalt alloys;    a first sub-structure comprising a first set of pedestals and a first conductor, the first conductor comprising upper portions deposited above the first set of pedestals and comprising lower portions defining a first set of trenches; and    a second sub-structure in electrical contact with the first conductor and comprising a second set of pedestals and a second conductor, the second conductor comprising upper portions deposited above the second set of pedestals and comprising lower portions to define a second set of trenches;    wherein the first set of trenches are aligned with the second set of pedestals and the first set of pedestals are aligned with the second set of trenches.    
   
   
       15 . The die as set forth in  claim 14 , wherein the magnetic material comprises upper portions deposited above the upper portions of the first and second conductors, and comprises lower portions deposited above the lower portions of the first and second conductors.  
   
   
       16 . The die as set forth in  claim 15 , further comprising a switch controller to switch the DC-to-DC switching converter at a switching frequency greater than 10 MHz.  
   
   
       17 . The die as set forth in  claim 16 , wherein the switching frequency is greater than 100 MHz.  
   
   
       18 . The die as set forth in  claim 16 , wherein the switching frequency is greater than 1 GHz.  
   
   
       19 . The die as set forth in  claim 14 , further comprising a switch controller to switch the DC-to-DC switching converter at a switching frequency greater than 10 MHz.  
   
   
       20 . The die as set forth in  claim 19 , wherein the switching frequency is greater than 100 MHz.  
   
   
       21 . The die as set forth in  claim 19 , wherein the switching frequency is greater than 1 GHz.  
   
   
       22 . A die comprising a DC-to-DC switching converter, the converter comprising: 
 an inductor comprising magnetic material selected from the group consisting of amorphous CoZrTa, CoFeHfO, CoAlO, FeSiO, CoFeAlO, CoNbTa, CoZr, and other amorphous cobalt alloys; and    a switch controller to switch the DC-to-DC switching converter at a switching frequency greater than 10 MHz.    
   
   
       23 . The die as set forth in  claim 22 , wherein the switching frequency is greater than 100 MHz.  
   
   
       24 . The die as set forth in  claim 22 , wherein the switching frequency is greater than 1 GHz.  
   
   
       25 . A computer system comprising: 
 a die comprising a microprocessor core; and    memory not on the die;    wherein the die further comprises a DC-to-DC switching converter, the converter comprising:    an inductor comprising magnetic material selected from the group consisting of amorphous CoZrTa, CoFeHfO, CoAlO, FeSiO, CoFeAlO, CoNbTa, CoZr, and other amorphous cobalt alloys; and    a switch controller to switch the DC-to-DC switching converter at a switching frequency greater than 10 MHz.    
   
   
       26 . The computer system as set forth in  claim 25 , the inductor further comprising: 
 a first sub-structure comprising a first conductor, the first conductor comprising upper portions and lower portions; and    a second sub-structure in electrical contact with the first conductor and comprising a second conductor, the second conductor comprising upper portions and lower portions;    wherein a magnetic flux due to a DC current flow in the inductor is such that the magnetic flux due to the DC current flow in the lower portions of the first conductor is aligned with the magnetic flux due to the DC current flow in the upper portions of the second conductor, and the magnetic flux due to the DC current flow in the upper portions of the first conductor is aligned with the magnetic flux due to the DC current flow in the lower portions of the second conductor.    
   
   
       27 . The computer system as set forth in  claim 25 , the inductor further comprising: 
 a conductor having a top, a bottom, a first side, and a second side; and    an oxide surrounding the top, bottom, first and second sides of the conductor;    wherein the magnetic material surrounds the oxide such that the conductor is insulated from the magnetic material.    
   
   
       28 . The die as set forth in  claim 25 , the inductor further comprising: 
 a conductor having a top, a bottom, a first side, and a second side;    wherein the magnetic material immediately surrounds the top, bottom, first and second sides of the conductor.