US2005200014A1PendingUtilityA1
Bump and fabricating process thereof
Priority: Sep 10, 2002Filed: Jan 17, 2005Published: Sep 15, 2005
Est. expirySep 10, 2022(expired)· nominal 20-yr term from priority
Inventors:William T. ChenHo-Ming TongChun-Chi LeeSu TaoChih-Huang ChangJeng-Da WuWen-Pin HuangPo-Jen Cheng
H10W 72/07141H10W 72/01225H10W 72/952H10W 72/252H10W 72/251H10W 72/29H10W 72/019
45
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Claims
Abstract
A bump structure on a contact pad and a fabricating process thereof. The bump comprises an under-ball-metallurgy layer, a bonding mass and a welding lump. The under-ball-metallurgy layer is formed over the contact pad and the bonding mass is formed over the under-ball-metallurgy layer by conducting a pressure bonding process. The bonding mass having a thickness between 4 to 10 μm is made from a material such as copper. The welding lump is formed over the bonding mass such that a sidewall of the bonding mass is also enclosed.
Claims
exact text as granted — not AI-modified1 . A bump structure on a contact pad, comprising:
an under-ball-metallurgy layer over the contact pad; a bonding mass over the under-ball-metallurgy layer, wherein the bonding mass is formed over the under-ball-metallurgy layer by pressure-bonding; and a bump over the bonding mass.
2 . The bump structure of claim 1 , wherein the under-ball-metallurgy layer comprises:
an adhesion layer over the contact pad; and a barrier layer over the adhesion layer, wherein the bonding mass is formed over the barrier layer.
3 . The bump structure of claim 2 , wherein material constituting the adhesion layer is selected from the group consisting of titanium, titanium-tungsten alloy, aluminum and chromium.
4 . The bump structure of claim 2 , wherein material constituting the barrier layer is selected from the group consisting of nickel-vanadium alloy and nickel.
5 . The bump structure of claim 1 , wherein the bonding mass is made from a material including copper.
6 . The bump structure of claim 1 , wherein the bonding mass has a thickness between about 4 μm to 10 μm.
7 . The bump structure of claim 1 , wherein material constituting the bump includes a lead-tin alloy.
8 . The bump structure of claim 1 , wherein material constituting the bump includes a lead-free alloy.
9 . The bump structure of claim 7 , wherein material constituting the bump is selected from the group consisting of tin, gold, silver, copper, bismuth, antimony, indium, zinc or combinations thereof in the form of an alloy.Join the waitlist — get patent alerts
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