Electroless deposition apparatus

Abstract

An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

1 . A substrate processing chamber adapted to perform an electroless deposition procession a substrate, comprising: 
 a fluid processing chamber having a processing region;    a substrate support positioned in the processing region having a substrate receiving surface;    an electroless fluid source adapted to deliver an electroless processing fluid to a substrate retained on the substrate receiving surface; and    an energy source that is adapted to deliver thermal energy to the electroless processing fluid.    
   
   
       2 . The apparatus of  claim 1 , further comprising an evaporation shield that is positioned proximate to the substrate receiving surface, wherein the energy source is in communication with a surface of the evaporation shield.  
   
   
       3 . The apparatus of  claim 2 , wherein the energy source is a heating element, a heat lamp, or combination thereof.  
   
   
       4 . The apparatus of  claim 1 , wherein the energy source is in thermal communication with the substrate support.  
   
   
       5 . The apparatus of  claim 1 , wherein the energy source is in thermal communication with the electroless fluid source.  
   
   
       6 . A substrate processing chamber adapted to perform an electroless deposition process on a substrate, comprising: 
 a fluid processing chamber having a processing region;    a substrate support positioned in the processing region having a substrate receiving surface;    a heating element adapted to heat a substrate that is retained on the substrate receiving surface; and    an electroless fluid source adapted to deliver an electroless processing fluid to the substrate retained on the substrate receiving surface.    
   
   
       7 . The apparatus of  claim 6 , wherein the substrate support rotates.  
   
   
       8 . The apparatus of  claim 6 , wherein the substrate support further comprises: 
 a vacuum groove formed in the substrate receiving surface;    a fluid seal retained on the substrate receiving surface that forms a chucking region which contains the vacuum groove; and    a vacuum generating device which is in communication with the vacuum groove, the fluid seal and the chucking region.    
   
   
       9 . The apparatus of  claim 6 , further comprising a lip formed on the substrate support, wherein the lip is adapted to retain the electroless processing fluid on a substrate positioned on the substrate receiving surface.  
   
   
       10 . The apparatus of  claim 6 , further comprising two or more catch cups mounted in the fluid processing chamber, wherein the catch cups are disposed in a processing chamber substantially radially outwards from the substrate support.  
   
   
       11 . The apparatus of  claim 6 , wherein the fluid processing chamber further comprises one or more walls that are adapted to form a sealed processing environment.  
   
   
       12 . A substrate processing chamber adapted to perform an electroless deposition process on a substrate, comprising: 
 a fluid processing chamber having a processing region;    a substrate support positioned in the processing region having a substrate receiving surface;    an electroless fluid source adapted to deliver an electroless processing fluid to a substrate retained on the substrate receiving surface;    a heat element that is adapted to deliver energy to the substrate support; and    a fluid heater adapted to heat the electroless processing fluid delivered from the electroless fluid source.    
   
   
       13 . A substrate processing chamber adapted to perform an electroless deposition process, comprising: 
 a fluid processing chamber having a processing region;    a substrate support positioned in the processing region having a substrate receiving surface;    two or more fluid sources that are adapted to deliver two or more chemical processing solutions that are combined to form an electroless processing solution;    a nozzle that is adapted to deliver the electroless processing solution to a substrate positioned on the substrate receiving surface; and    a fluid heater that is adapted to heat the electroless processing fluid and is positioned between the two or more fluid sources and the nozzle.    
   
   
       14 . The apparatus of  claim 13 , wherein the substrate support is adapted for face-up processing.  
   
   
       15 . The apparatus of  claim 13 , wherein the substrate support is adapted to rotate.  
   
   
       16 . The apparatus of  claim 13 , wherein the two or more fluid sources further comprise at least the following: 
 a first fluid source adapted to deliver a first chemical processing solution that contains a metal ion; and    a second fluid source adapted to deliver a second chemical processing solution that contains a reducing agent.    
   
   
       17 . The apparatus of  claim 13 , wherein the fluid processing chamber further comprises one or more walls that are adapted to form a sealed processing environment.  
   
   
       18 . A substrate processing chamber adapted to perform an electroless deposition process on a substrate, comprising: 
 one or more walls that form a sealed fluid processing chamber that has a processing region;    a substrate support positioned in the processing region having a substrate receiving surface;    a motor that is adapted to rotate the substrate support;    a fluid source adapted to deliver a processing fluid to the substrate retained on the substrate receiving surface;    two or more catch cups positioned in the fluid processing chamber, wherein the catch cups are disposed in a fluid processing chamber substantially radially outwards from the substrate support; and    a substrate support lift adapted to position the substrate support in a processing position relative to each of the two or more catch cups.    
   
   
       19 . A substrate processing chamber adapted to perform an electroless deposition process on a substrate, comprising: 
 one or more walls that form a sealed fluid processing chamber that has a processing region;    a substrate support positioned in the processing region having a substrate receiving surface;    two or more fluid sources that are adapted to deliver two or more chemical processing solutions that are combined to form an electroless processing solution, wherein the two or more fluid sources comprise; 
 a first fluid source adapted to deliver a first chemical processing solution that contains a metal ion; and  
 a second fluid source adapted to deliver a second chemical processing solution that contains a reducing agent;  
   a nozzle that is adapted to deliver the electroless processing solution to a substrate positioned on the substrate receiving surface; and    a energy source adapted to maintain a desired temperature on a substrate positioned on the substrate receiving surface during an electroless plating process.    
   
   
       20 . The apparatus of  claim 19 , further comprising an evaporation shield that is positioned proximate to the substrate receiving surface, wherein a surface of the evaporation shield is in communication with the energy source.  
   
   
       21 . The apparatus of  claim 19 , wherein the energy source is adapted to deliver energy to the substrate receiving surface.  
   
   
       22 . The apparatus of  claim 19 , wherein the energy source is adapted to deliver energy to the electroless processing fluid.  
   
   
       23 . The apparatus of  claim 19 , wherein one of the one or more walls further comprises an opening that is sealable, wherein the opening is adapted to provide an external robot access to the processing region of the chamber.  
   
   
       24 . The apparatus of  claim 19 , further comprising: 
 an electrical contact that is adapted to make electrical communication with a surface of a substrate that is positioned on the substrate support;    an electrode that is adapted to make contact with a fluid that is positioned on the substrate surface; and    a power supply adapted to bias the electrical contact relative to the electrical contact.    
   
   
       25 . The apparatus of  claim 19 , further comprising: 
 a cover that is positioned over a substrate that is positioned on the substrate receiving surface, wherein the cover comprises: 
 one or more walls that form an evaporation containing region adjacent to a surface of a substrate positioned on the substrate support; and  
 a port formed in one of the one or more walls that is in fluid communication with the nozzle and the evaporation containing region.  
   
   
   
       26 . A substrate processing chamber adapted to perform an electroless deposition process on a substrate, comprising: 
 a fluid processing chamber;    a substrate support having a substrate receiving surface;    an evaporation shield comprising: 
 a lower surface;  
 a recessed area adjacent to the lower surface;  
 a membrane disposed on the lower surface to form a plenum between the membrane and the recessed area, the membrane having a first surface and a second surface;  
 a fluid inlet port that is in communication with the lower surface; and  
 an outer surface that is adjacent to the lower surface, wherein the outer surface is substantially the same diameter or size as a substrate; and  
   a gap formed between the lower surface and a substrate that is positioned on the substrate receiving surface.    
   
   
       27 . The apparatus of  claim 26 , wherein the evaporation shield further comprises embedded heating elements or heat lamps that are adapted to heat the lower surface.  
   
   
       28 . The apparatus of  claim 26 , wherein the gap formed between the lower surface and a substrate that is positioned on the substrate receiving surface is between about 0.5 mm and about 4 mm.