Method of forming metal silicide film and method of manufacturing semiconductor device having metal silicide film

Abstract

A metal-containing film is formed on a silicon-containing conductive region at a temperature where the metal of the metal-containing film and silicon of the semiconductor substrate react with each other to form a diffusion restraint interface film interposed between the metal-containing film and silicon of the and the semiconductor substrate. The resultant structure is annealed so that metal of the metal-containing film and silicon of the silicon-containing conductive region react with each other to form a metal silicide film.

1 . A method of forming a metal silicide film, comprising: 
 forming a metal-containing film on a surface of a semiconductor substrate having an insulating region and a silicon-containing conductive region, the metal-containing film being formed at a temperature at which metal of the metal-containing film and silicon of the silicon-containing conductive region react with each other to form a diffusion restraint interface film interposed between the metal-containing film and silicon of the silicon-containing conductive region; and    annealing the resultant structure so that metal of the metal-containing film and silicon of the silicon-containing conductive region react with each other to form the metal silicide film.    
   
   
       2 . The method of  claim 1 , further comprising forming a titanium-rich capping film on the metal-containing film prior to the annealing.  
   
   
       3 . The method of  claim 1 , wherein metal-containing film is at least one selected from the group consisting of TaN, NiTa, Ti, TiN, Ta, W, WN, Hf, Nb, Mo, RuO 2 , Mo 2 N, Ni, Ir, Pt, Cr, RuO, Mo 2 N, WNx, NiPt, or a combination thereof.  
   
   
       4 . The method of  claim 2 , wherein the annealing, comprises: 
 a first annealing at a temperature range of 350 to 650° C.;    removing the titanium-rich capping film; and    a second annealing at a temperature range of 700-900° C.    
   
   
       5 . The method of  claim 1 , wherein a pretreatment process is performed prior to the formation of the metal-containing film, and the pretreatment process comprising: 
 wet-cleaning the surface of the semiconductor substrate; and    etching the semiconductor substrate by radio frequency (RF) sputtering.    
   
   
       6 . The method of  claim 1 , wherein a pretreatment process is performed prior to the formation of the metal-containing film, and the pretreatment process comprising: 
 wet-cleaning the surface of the semiconductor substrate using a hydrogen fluoride (HF) solution diluted with deionized (DI) water;    wet-cleaning the surface of the semiconductor substrate using a mixture solution of ammonium hydroxide, hydrogen peroxide (H 2 O 2 ), and water; and    wet-cleaning the surface of the semiconductor substrate using a HF solution diluted with DI water.    
   
   
       7 . The method of  claim 1 , wherein a pretreatment process is performed prior to the formation of the metal-containing film, and the pretreatment process comprising: 
 wet-cleaning the surface of the semiconductor substrate using a mixture solution of sulfuric acid and H 2 O 2 ; and    wet-cleaning the surface of the semiconductor substrate using a HF solution diluted with DI water.    
   
   
       8 . The method of  claim 1 , wherein the metal-containing film is formed at a temperature range of 300-500° C.  
   
   
       9 . A method of manufacturing a semiconductor device, said method comprising: 
 forming an isolation region defining an active region on a semiconductor substrate;    forming on the active region a transistor having source/source regions and a gate;    forming a metal-containing film on a surface of the semiconductor substrate, the metal-containing film being formed at a temperature at which metal of the metal-containing film and silicon of the semiconductor substrate react with each other to form a diffusion restraint interface film interposed between the metal-containing film and silicon of the and the semiconductor substrate; and    annealing the resultant structure so that metal of the metal-containing film and silicon of the silicon-containing conductive region react with each other to form the metal silicide film.    
   
   
       10 . The method of  claim 9 , further comprising forming a titanium-rich capping film on the metal-containing film.  
   
   
       11 . The method of  claim 9 , wherein forming of the metal-containing film comprises forming the metal-containing film exclusively on a surface of the gate, the metal-containing film being formed at a temperature at which metal of the metal-containing film and silicon of the gate to form a diffusion restraint interface film interposed between the metal-containing film and silicon of the gate.  
   
   
       12 . The method of  claim 9 , wherein forming of the metal-containing film comprises forming the metal-containing film exclusively on a surface of the source/drain region, the metal-containing film being formed at a temperature at which metal of the metal-containing film and silicon of the source/drain regions to form a diffusion restraint interface film interposed between the metal-containing film and silicon of the source/drain region.  
   
   
       13 . The method of  claim 9 , wherein forming of the metal-containing film comprises forming the metal-containing film on a surface of the source/drain region and the gate, the metal-containing film being formed at a temperature at which metal of the metal-containing film and silicon of the source/drain regions and the gate to form a diffusion restraint interface film interposed between the metal-containing film and silicon of the source/drain region and the gate.  
   
   
       14 . The method of  claim 9 , wherein metal-containing film is at least one selected from the group consisting of TaN, NiTa, Ti, TiN, Ta, W, WN, Hf, Nb, Mo, RuO 2 , Mo 2 N, Ir, Pt, Cr, RuO, Mo 2 N, WNx, NiPt, or a combination thereof.  
   
   
       15 . The method of  claim 10 , wherein the annealing, comprises: 
 a first annealing at a temperature range of 350 to 650° C.;    removing the titanium-rich capping film; and    a second annealing at a temperature range of 700-900° C.    
   
   
       17 . The method of  claim 9 , wherein a pretreatment process is performed prior to the formation of the metal-containing film, and the pretreatment process comprising: 
 wet-cleaning the surface of the semiconductor substrate; and    etching the semiconductor substrate by radio frequency (RF) sputtering.    
   
   
       18 . The method of  claim 9 , wherein a pretreatment process is performed prior to the formation of the metal-containing film, and the pretreatment process comprising: 
 wet-cleaning the surface of the semiconductor substrate using a hydrogen fluoride (HF) solution diluted with deionized (DI) water;    wet-cleaning the surface of the semiconductor substrate using a mixture solution of ammonium hydroxide, hydrogen peroxide (H 2 O 2 ), and water; and    wet-cleaning the surface of the semiconductor substrate using a HF solution diluted with DI water.    
   
   
       19 . The method of  claim 9 , wherein a pretreatment process is performed prior to the formation of the metal-containing film, and the pretreatment process comprising: 
 wet-cleaning the surface of the semiconductor substrate using a mixture solution of sulfuric acid and H 2 O 2 ; and    wet-cleaning the surface of the semiconductor substrate using a HF solution diluted with DI water.    
   
   
       20 . The method of  claim 9 , wherein the metal-containing film is formed at a temperature range of 300-500° C.