US2005194683A1PendingUtilityA1

Bonding structure and fabrication thereof

41
Priority: Mar 8, 2004Filed: Mar 8, 2004Published: Sep 8, 2005
Est. expiryMar 8, 2024(expired)· nominal 20-yr term from priority
Inventors:Chen-Hua YuHorng-Huei Tseng
H10W 72/5524H10W 72/5522H10W 72/952H10W 72/923H10W 72/252H10W 72/59H10W 72/29H10W 20/064H10W 20/055H10W 20/037H10W 72/019H10W 20/48H10W 72/983H10W 20/4424
41
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Claims

Abstract

A bonding structure and the method of fabricating the same are disclosed. The bonding structure of the invention includes a copper-based pad formed in an insulator layer and a protection layer substantially covering top surface of the copper-based pad. The protection layer is self-aligned formed and the material thereof is selected from a group consisting of metal nitride, copper alloy, copper compounds, and a combination thereof.

Claims

exact text as granted — not AI-modified
1 . A bonding structure, comprising: 
 a copper-based pad formed in an insulator layer;    a protection layer substantially covering a top surface of the copper-based pad; and    a conductive bonding directly connecting the protection layer.    
   
   
       2 . (canceled)  
   
   
       3 . The bonding structure as claimed in  claim 1 , wherein the protection layer is a self-aligned protection layer.  
   
   
       4 . The bonding structure as claimed in  claim 1 , wherein the insulating layer comprises organic low-k material and inorganic low-k material.  
   
   
       5 . The bonding structure as claimed in  claim 1 , wherein the protection layer is a tungsten layer.  
   
   
       6 . The bonding structure as claimed in  claim 1 , wherein the thickness of the protection layer is 100 Å to 1000 Å.  
   
   
       7 . The bonding structure as claimed in  claim 1 , wherein the protection layer comprises a conductive material selected form a group consisting of metal nitride, copper alloy, copper compounds, and a combination thereof.  
   
   
       8 . The bonding structure as claimed in  claim 1 , wherein the protection layer comprises refractory metal.  
   
   
       9 . The bonding structure as claimed in  claim 1 , wherein the dielectric constant of the insulating layer is less than 3.6.  
   
   
       10 - 21 . (canceled)  
   
   
       22 . A bonding structure, comprising: 
 a copper-based pad over an interconnect thereunder formed in an insulator layer;    a protection layer substantially covering a top surface of the copper-based pad; and    a conductive bonding directly connecting the protection layer.    
   
   
       23 . (canceled)  
   
   
       24 . The bonding structure as claimed in  claim 22 , wherein the protection layer is a self-aligned protection layer.  
   
   
       25 . The bonding structure as claimed in  claim 22 , wherein the insulating layer comprises organic low-k material.  
   
   
       26 . The bonding structure as claimed in  claim 22 , wherein the insulating layer comprises inorganic low-k material.  
   
   
       27 . The bonding structure as claimed in  claim 22 , wherein the thickness of the protection layer is 100 Å to 1000 Å.  
   
   
       28 . The bonding structure as claimed in  claim 22 , wherein the protection layer comprises a conductive material selected from a group consisting of metal nitride, copper alloy, copper compounds, and a combination thereof.  
   
   
       29 . The bonding structure as claimed in  claim 22 , wherein the protection layer comprises refractory metal.  
   
   
       30 . The bonding structure as claimed in  claim 22 , wherein the dielectric constant of the insulating layer is less than 3.6.  
   
   
       31 . A bonding structure, comprising: 
 a copper-based pad formed in an insulator layer, having a recession below a top surface of the insulator layer; and    a protection layer substantially filling the recession and leveling to a top surface of the insulator layer.    
   
   
       32 . The bonding structure as claimed in  claim 31 , wherein the recession has a depth about 100-1000 Å.  
   
   
       33 . The bonding structure as claimed in  claim 31 , wherein the protection layer is a self-aligned protection layer.  
   
   
       34 . The bonding structure as claimed in  claim 31 , wherein the insulating layer comprises organic low-k material and inorganic low-k material.  
   
   
       35 . The bonding structure as claimed in  claim 31 , wherein the protection layer is a tungsten layer.  
   
   
       36 . The bonding structure as claimed in  claim 31 , wherein the protection layer comprises a conductive material selected form a group consisting of metal nitride, copper alloy, copper compounds, and a combination thereof.  
   
   
       37 . The bonding structure as claimed in  claim 31 , wherein the protection layer comprises refractory metal.  
   
   
       38 . The bonding structure as claimed in  claim 31 , wherein the dielectric constant of the insulating layer is less than 3.6.

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