IGBT module

Abstract

An IGBT module is configured with a plurality of IGBT cells connected to each other. The IGBT chips are each configured a plurality of unit cells connected to each other. The unit cells each include one IGBT element. Gate voltage is applied to the gate of the IGBT element from a common gate terminal through a gate pad and a gate resistor. Emitter voltage is applied to the emitter of the IGBT element from a common emitter terminal through an emitter pad. Collector voltage is applied to the collector of the IGBT element from a common collector terminal. The gate pad, gate transistor and emitter pad are provided for each of the unit cells. Thus obtained is an IGBT module capable of suppressing gate voltage oscillation without significantly increasing switching loss.

1 . An IGBT module comprising 
 a plurality of resistors each having a first end and a second end; and    a plurality of IGBT elements provided in one-to-one correspondence to said plurality of resistors, wherein    each of said plurality of IGBT elements has a collector, an emitter and a gate connected to said first end of a corresponding one of said plurality of resistors,    said plurality of resistors are connected in common to each other at said second end,    said plurality of IGBT elements are connected in common to each other at said collector and at said emitter, respectively, and    said plurality of IGBT elements are divided into groups, each group containing two or more of said plurality of IGBT elements, and said groups are respectively incorporated into semiconductor chips different from each other.    
   
   
       2 . The IGBT module according to  claim 1 , wherein 
 said plurality of resistors are provided on the outside of said semiconductor chips, and    said semiconductor chips each include a plurality of pads through each of which each of said plurality of resistors and each of said plurality of IGBT elements are connected to each other.    
   
   
       3 . The IGBT module according to  claim 1 , wherein 
 each of said plurality of resistors is incorporated into one of said semiconductor chips including one of said groups containing one of said plurality of IGBT elements corresponding to said each of said plurality of resistors, and    each of said semiconductor chips includes a pad connected to said second end of one of said plurality of resistors included in said each of said semiconductor chips.    
   
   
       4 . The IGBT module according to  claim 3 , wherein 
 said pad includes a plurality of pads provided for each of said semiconductor chips in one-to-one correspondence to said plurality of resistors.    
   
   
       5 . The IGBT module according to  claim 3 , wherein 
 said pad is connected in common to ones of said plurality of resistors at said second end in one of said semiconductor chips including said pad and said ones of said plurality of resistors.    
   
   
       6 . The IGBT module according to  claim 3 , wherein 
 said plurality of resistors are each configured using a filling material for a trench formed in each of said semiconductor chips.    
   
   
       7 . The IGBT module according to  claim 4 , wherein 
 said plurality of resistors are each configured using a filling material for a trench formed in each of said semiconductor chips.    
   
   
       8 . The IGBT module according to  claim 5 , wherein 
 said plurality of resistors are each configured using a filling material for a trench formed in each of said semiconductor chips.