Electronic device formed from a thin film with vertically oriented columns with an insulating filler material

Abstract

A thin film device comprises: a substrate and a thin film having a thickness formed on the substrate, wherein the thickness of the thin film is at least 1 micrometer, a crystal structure having crystals with a grain size formed within the thin film, wherein the grain size of a majority of the crystals includes a height to width ratio greater than three to two.

1 - 16 . (canceled)  
   
   
       17 . A method for producing a thin film device, within a reactor vessel, having crystals vertically oriented therein, the method comprising the steps of: 
 a) preparing a substrate compatible to a hydrothermal growth process;    b) depositing a seed layer onto said substrate;    c) placing said substrate and at least one reagent into said vessel;    d) closing said vessel and hydrothermally synthesizing said crystal structure;    e) removing said substrate from said vessel;    f) filling gaps between said crystals with a filler material; and,    g) applying a top electrode.    
   
   
       18 . The method according to  claim 17 , wherein step (a) comprises forming a metal substrate.  
   
   
       19 . The method according to  claim 17 , wherein step (a) comprises forming a metal-coated substrate.  
   
   
       20 . The method according to  claim 17 , wherein step (b) comprises depositing said seed layer by chemical solution, chemical vapor, or physical vapor deposition methods.  
   
   
       21 . The method according to  claim 20 , wherein step (b) further comprises depositing said seed layer to a thickness of less than 500 nm.  
   
   
       22 . The method according to  claim 17 , wherein step (d) comprises synthesizing said crystals to a height of at least 1 micrometer.  
   
   
       23 . The method according to  claim 17 , wherein step (d) comprises synthesizing said crystals for a period of time at a temperature between about 120° and 250° C.  
   
   
       24 . The method according to  claim 17 , wherein step (f) further comprises adding said filler material in the form of a liquid to fill said gaps between said crystals, and subsequently curing said filler material to form a solid.  
   
   
       25 . The method according to  claim 17 , wherein step (f) further comprises adding said filler material in the form of a gel to fill said gaps between said crystals, and subsequently curing said filler material to form a solid.  
   
   
       26 . A method for producing a crystal structure in association with a thin film device, comprising: 
 preparing a substrate compatible to a hydrothermal growth process;    depositing a seed layer onto said substrate;    placing said substrate and at least one reagent into a reactor vessel; and,    closing said vessel and hydrothermally synthesizing a crystal structure epitaxially with said substrate, said crystal structure includes a plurality of crystals wherein a majority of said plurality of crystals having a height to width ratio of at least 3 to 2.    
   
   
       27 . The method according to  claim 26 , wherein said height to width ratio is at least 3 to 1.  
   
   
       28 . The method according to  claim 26 , wherein said height to width ratio is at least 5 to 1.  
   
   
       29 . The method according to  claim 26 , wherein said height to width ratio is at least 7 to 1.  
   
   
       30 . The method according to  claim 26 , wherein preparing said substrate includes forming a metal substrate.  
   
   
       31 . The method according to  claim 26 , wherein preparing said substrate includes forming a metal-coated substrate.  
   
   
       32 . The method according to  claim 26 , wherein a deposition method for depositing said seed layer is selected from the group consisting of chemical solution, chemical vapor, and physical vapor.  
   
   
       33 . A method for producing a piezoelectric device having a crystal growth structure, comprising: 
 preparing a substrate compatible to a hydrothermal growth process;    depositing a seed layer onto said substrate;    placing said substrate and at least one reagent into a reactor vessel; and,    closing said vessel and hydrothermally synthesizing a crystal growth structure with said substrate, said crystal growth structure includes a plurality of tetragonal crystals grown generally perpendicular to said seed layer.    
   
   
       34 . The method according to  claim 33 , wherein said crystal growth structure oriented such that the extent of growth direction <001> is at least one and a half times the extent of growth directions <100> and <010>.  
   
   
       35 . The method according to  claim 33 , wherein said crystal growth structure is epitaxially with said substrate.  
   
   
       36 . The method according to  claim 33 , wherein said crystal growth structure is epitaxially with said seed layer.  
   
   
       37 . The method according to  claim 33 , further including synthesizing said plurality of crystals to a height of at least 1 micrometer.  
   
   
       38 . The method according to  claim 37 , further including synthesizing said plurality of crystals for a period of time at a temperature between about 120° and 250° C.