Semiconductor device and method of manufacturing the same

Abstract

When a crystalline semiconductor thin film formed by using a catalytic element for facilitating crystallization is subjected to a heat treatment in an atmosphere containing a halogen element at a temperature exceeding 700° C., a crystal structure in which crystal grain boundaries do not substantially exist can be obtained. In the present invention, the foregoing crystalline semiconductor thin film is formed on a crystallized glass substrate which is inexpensive and has high heat resistance, so that an inexpensive semiconductor device can be provided.

1 . A semiconductor device comprising: 
 a glass substrate having a distortion point of not lower than 750° C.;    an insulating silicon film disposed on at least a front surface and a back surface of said glass substrate; and    a TFT including a channel formation region of a semiconductor thin film made of a collective of a plurality of rod-like or flattened rod-like crystals and disposed on said insulating silicon film,    wherein plane orientation of said channel formation region is roughly {110} orientation, and not less than 90% of crystal lattices have continuity at crystal grain boundaries.