Gas delivery device for improved deposition of dielectric material

Abstract

A gas delivery device useful in material deposition processes executed during semiconductor device fabrication in a reaction chamber, including the gas delivery device of the present invention and a method for carrying out a material deposition process, including introducing process gas into a reaction chamber using the gas delivery device of the present invention. In each embodiment, the gas delivery device of the present invention includes a plurality of active diffusers and a plurality of gas delivery nozzles, which extend into the reaction chamber. Before entering the reaction chamber through one of the plurality of gas delivery nozzles, process gas must first pass through one of the plurality active diffusers. Each of the active diffusers is centrally controllable such that the rate at which process gas flows through each active diffuser is exactly controlled at all times throughout a given deposition process.

1 . A gas delivery device for a chamber comprising: 
 a gas delivery system;    a plurality of gas delivery nozzles; and    a plurality of active diffusers connected to said gas delivery system controlling the flow of gas from said gas delivery system to said plurality of gas delivery nozzles, each active diffuser of said plurality of active diffusers having a pressure sensor having a portion thereof located therein controlling each active diffuser and controlled by a central controller for providing an amount of process gas flow from said gas delivery system into said chamber through said plurality of gas delivery nozzles.    
   
   
       2 . The gas delivery device of  claim 1 , wherein said plurality of active diffusers comprises a plurality of piezoelectric valves.  
   
   
       3 . The gas delivery device of  claim 1 , wherein said central controller comprises a programmable computer circuit.  
   
   
       4 . The gas delivery device of  claim 1 , wherein said gas delivery system comprises a gas delivery line having a plurality of branches, each of said plurality of branches being associated with an active diffuser included in said plurality of active diffusers.  
   
   
       5 . The gas delivery device of  claim 1 , wherein said gas delivery system comprises: 
 a primary gas delivery line;    a plenum; and    a plurality of secondary gas delivery lines, each secondary gas delivery line of said plurality of secondary gas delivery lines extending between said plenum and an active diffuser included in said plurality of active diffusers.    
   
   
       6 . The gas delivery device of  claim 5 , further comprising a plurality of tertiary gas delivery lines, each tertiary gas delivery line of said plurality of tertiary gas delivery lines extending between an active diffuser included in said plurality of active diffusers and a gas delivery nozzle of said plurality of gas delivery nozzles.  
   
   
       7 . The gas delivery device of  claim 1 , wherein said plurality of active diffusers comprises a first plurality of active diffusers and a second plurality of active diffusers and said gas delivery system includes a primary gas delivery line, a plenum, a plurality of secondary gas delivery lines, each secondary gas delivery line of said plurality of secondary gas delivery lines extending between said plenum and an active diffuser of said first plurality of active diffusers and a plurality of tertiary gas delivery lines, each tertiary gas delivery line of said plurality of tertiary gas delivery lines extending between a first active diffuser of said first plurality of active diffusers and a second active diffuser of said second plurality of active diffusers.  
   
   
       8 . The gas delivery device of  claim 1 , further comprising a manifold having an outside diameter and an inside diameter, wherein said plurality of gas delivery nozzles extending into said reaction chamber extends away from said inside diameter of said manifold, and each active diffuser of said plurality of active diffusers is disposed around said outside diameter of said manifold.  
   
   
       9 . The gas delivery device of  claim 1 , further comprising: 
 a first manifold having a first inside diameter and a first outside diameter, each active diffuser of said plurality of active diffusers disposed around said first outside diameter and a plurality of gas passageways extending away from said first inside diameter; and    a second manifold having a second inside diameter and a second outside diameter, wherein said plurality of gas passageways extending away from said first inside diameter of said first manifold extends into said second outside diameter of said second manifold, forming sealed passageways enabling fluid communication between said first and said second manifolds and said plurality of gas delivery nozzles extends away from said second diameter of said second manifold.    
   
   
       10 . A reaction chamber comprising: 
 a chamber for placing at least one semiconductor substrate therein; and    a gas delivery device comprising a gas delivery system, a plurality of gas delivery nozzles connected to said gas delivery system and circumscribing and extending into said chamber, and a plurality of active diffusers connected to said gas delivery system, each active diffuser of said plurality of active diffusers having a sensor having at least a portion thereof located therein for controlling each active diffuser, and controlled by a central controller providing a desired amount of process gas flow from said gas delivery system to said chamber through said plurality of gas delivery nozzles.    
   
   
       11 . The reaction chamber of  claim 10 , wherein said plurality of active diffusers of said gas delivery device comprises a plurality of piezoelectric valves.  
   
   
       12 . The reaction chamber of  claim 10 , wherein said central controller of said gas delivery device comprises a programmable computer circuit.  
   
   
       13 . The reaction chamber of  claim 10 , wherein said gas delivery system of said gas delivery device comprises a gas delivery line having a plurality of branches, each of said plurality of branches being associated with an active diffuser included in said plurality of active diffusers.  
   
   
       14 . The reaction chamber of  claim 10 , wherein said gas delivery system of said gas delivery device comprises: 
 a primary gas delivery line;    a plenum; and    a plurality of secondary gas delivery lines, each secondary gas delivery line of said plurality of secondary gas delivery lines extending between said plenum and an active diffuser included in said plurality of active diffusers.    
   
   
       15 . The reaction chamber of  claim 14 , wherein said gas delivery system of said gas delivery device further comprises a plurality of tertiary gas delivery lines, each tertiary gas delivery line of said plurality of tertiary gas delivery lines extending between an active diffuser included in said plurality of active diffusers and a gas delivery nozzle of said plurality of gas delivery nozzles.  
   
   
       16 . The reaction chamber of  claim 15 , wherein said plurality of active diffusers of said gas delivery device comprises a first plurality of active diffusers and a second plurality of active diffusers, and said gas delivery system of said gas delivery device includes a primary gas delivery line, a plenum, a plurality of secondary gas delivery lines, each secondary gas delivery line of said plurality of secondary gas delivery lines extending between said plenum and an active diffuser of said first plurality of active diffusers, and a plurality of tertiary gas delivery lines, each tertiary gas delivery line of said plurality of tertiary gas delivery lines extending between a first active diffuser of said first plurality of active diffusers and a second active diffuser of said second plurality of active diffusers.  
   
   
       17 . The reaction chamber of  claim 10 , wherein said gas delivery device further comprises a manifold having an outside diameter and on inside diameter, said plurality of gas delivery nozzles extending into said reaction chamber extends away from said inside diameter of said manifold, and each active diffuser of said plurality of active diffusers is disposed around said outside diameter of said manifold.  
   
   
       18 . The reaction chamber of  claim 10 , wherein said gas delivery device further comprises: 
 a first manifold having a first inside diameter and a first outside diameter, wherein each active diffuser of said plurality of active diffusers is disposed around said first outside diameter and a plurality of gas passageways extends away from said first inside diameter; and    a second manifold having a second inside diameter and a second outside diameter, wherein said plurality of gas passageways extending away from said first inside diameter of said first manifold extends into said second outside diameter of said second manifold, forming sealed passageways enabling fluid communication between said first and said second manifolds, and said plurality of gas delivery nozzles extends away from said second diameter of said second manifold.    
   
   
       19 . A method for depositing a material over a semiconductor substrate in a chamber comprising: 
 providing a gas delivery device comprising a gas delivery system, a plurality of gas delivery nozzles flowing into the chamber, and a plurality of active diffusers, each active diffuser of said plurality of active diffusers being controllable by a central controller to provide an amount of process gas flow from said gas delivery system, through said plurality of gas delivery nozzles and into said chamber; and    introducing process gas within said chamber via said gas delivery device.