Plasma processing system and method

Abstract

A plasma processing system and method for operating a diagnostic system in conjunction with a plasma processing system are provided. The diagnostic system is in communication with a plasma processing chamber of the plasma processing system and includes a diagnostic sensor to detect a plasma process condition. The diagnostic system is configured to substantially reduce contamination of the diagnostic sensor. The method includes substantially reducing contamination of the diagnostic sensor and detecting a condition of the plasma process and/or a substrate in the processing chamber.

1 . A plasma processing system comprising: 
 a processing chamber having an opening formed in a wall thereof and containing a plasma processing region;    a chuck, constructed and arranged to support a substrate within the chamber in the processing region;    a plasma generator in communication with the chamber, the plasma generator being constructed and arranged to generate a plasma during a plasma process in the plasma processing region; and    a diagnostic system having a diagnostic sensor in communication with the chamber and being constructed and arranged to substantially reduce contamination of the diagnostic sensor,    the diagnostic system including a passageway formed between the plasma processing region and the diagnostic sensor and having a predetermined length and a predetermined diameter,    wherein the passageway has a length to diameter ratio, provided by dividing the predetermined length by the predetermined diameter, of at least 4.    
     
     
         2 . The plasma processing system of  claim 1 , wherein the diagnostic system is constructed and arranged to detect a plasma process and/or substrate condition associated with the chamber.  
     
     
         3 . The plasma processing system of  claim 1 , wherein the diagnostic system includes a restrictor element positioned in the passageway.  
     
     
         4 . The plasma processing system of  claim 3 , wherein the restrictor element is positioned adjacent the opening in the chamber.  
     
     
         5 . The plasma processing system of  claim 3 , wherein the restrictor element is configured to abut a recessed portion of the chamber.  
     
     
         6 . The plasma processing system of  claim 3 , wherein the restrictor element has a tapered outer surface.  
     
     
         7 . The plasma processing system of  claim 1 , wherein the diagnostic system includes a purge gas port in communication with the passageway, the purge gas port being capable of supplying a purge gas to purge the passageway.  
     
     
         8 . The plasma processing system of  claim 7 , wherein the restrictor element is configured to create a higher pressure of purge gas passed through the passageway due to reduced flow conductance.  
     
     
         9 . The plasma processing system of  claim 1 , wherein the diagnostic sensor is constructed and arranged to detect a plasma process and/or a substrate condition associated with the plasma processing region.  
     
     
         10 . The plasma processing system of  claim 9 , wherein the diagnostic sensor includes an optical assembly.  
     
     
         11 . The plasma processing system of  claim 9 , wherein the plasma process condition is an endpoint of the plasma process.  
     
     
         12 . The plasma processing system of  claim 1 , further comprising an electric field generator configured to produce an electric field at least in the passageway or a vicinity thereof adjacent to the plasma processing chamber.  
     
     
         13 . The plasma processing system of  claim 12 , wherein the electric field generator comprises an electrode assembly having at least one electrode.  
     
     
         14 . The plasma processing system of  claim 12 , further comprising an insulator substantially surrounding the electric field generator.  
     
     
         15 . The plasma processing system of  claim 14 , further comprising a power supply coupled to the electric field generator to supply power to the electric field generator.  
     
     
         16 . The plasma processing system of  claim 15 , wherein the power is DC or RF biased power.  
     
     
         17 . The plasma processing system of  claim 1 , further comprising a magnetic field generator configured to produce a magnetic field at least in the passageway or a vicinity thereof adjacent to the plasma processing chamber.  
     
     
         18 . The plasma processing system of  claim 17 , further comprising a magnetic field leakage reducing member substantially surrounding the magnetic field generator.  
     
     
         19 . The plasma processing system of  claim 17 , wherein the magnetic field generator comprises a plurality of magnets.  
     
     
         20 . The plasma processing system of  claim 19 , wherein the plurality of magnets is positioned around the passageway such that each magnet of the plurality of magnets has a polarization direction separated from a polarization direction of an adjacent magnet by twice the separation angle between the magnets.  
     
     
         21 . The plasma processing system of  claim 19  wherein the plurality of magnets is positioned around the passageway such that each magnet of the plurality of magnets has a polarization direction directed in the same radial direction.  
     
     
         22 . The plasma processing system of  claim 19  wherein the plurality of magnets is positioned around the passageway such that alternate magnets of the plurality of magnets have a polarization direction directed in opposite radial directions.  
     
     
         23 . The plasma processing system of  claim 17 , wherein the magnetic field generator comprises at least one current-carrying coil.  
     
     
         24 . The plasma processing system of  claim 1 , wherein the wall of the chamber has a thickness that is less than the predetermined length of the passageway.  
     
     
         25 . The plasma processing system of  claim 1 , further comprising a fluid chamber surrounding the passageway.  
     
     
         26 . The plasma processing system of  claim 25 , further comprising a fluid inlet in communication with the fluid chamber and a fluid outlet in communication with the fluid chamber, wherein a fluid having a certain temperature can be supplied to the fluid chamber through the fluid inlet and can be removed from the fluid chamber through the fluid outlet.  
     
     
         27 . The plasma processing system of  claim 25 , further comprising a temperature controlled system associated with the fluid chamber and being capable of controlling a temperature of a fluid within the fluid chamber.  
     
     
         28 . The plasma processing system of  claim 27 , wherein the temperature controlled system is configured to heat the fluid within the fluid chamber.  
     
     
         29 . The plasma processing system of  claim 27 , wherein the temperature controlled system is configured to cool the fluid within the fluid chamber.  
     
     
         30 . The plasma processing system of  claim 1 , wherein the passageway has a variable diameter such that the predetermined diameter increases or decreases along the length of the passageway.  
     
     
         31 . A method for operating a diagnostic system in conjunction with a plasma processing system having a processing chamber containing a plasma processing region in which a plasma can be generated during a plasma process, the diagnostic system including a diagnostic sensor and being coupled to the plasma processing region, the method comprising: 
 providing a passageway formed between the plasma processing chamber and the diagnostic sensor, the passageway having a length to diameter ratio, provided by dividing a predetermined length of the passageway by a predetermined diameter of the passageway, of at least 4;    substantially reducing contamination of the diagnostic sensor; and    detecting a condition of the plasma process and/or a substrate in the processing chamber with the diagnostic sensor.    
     
     
         32 . The method of  claim 31 , further comprising restricting the passageway to a predetermined length and a predetermined diameter with a restrictor element.  
     
     
         33 . The method of  claim 31 , further comprising tapering the passageway so that the predetermined diameter increases or decreases along the passageway.  
     
     
         34 . The method of  claim 31 , wherein the substantially reducing includes providing fluid of a certain temperature substantially surrounding the passageway.  
     
     
         35 . The method of  claim 34 , wherein the substantially reducing includes heating fluid substantially surrounding the passageway to a certain temperature.  
     
     
         36 . The method of  claim 34 , wherein the substantially reducing includes cooling fluid substantially surrounding the passageway to a certain temperature.  
     
     
         37 . The method of  claim 31 , wherein the substantially reducing includes producing an electric field at least in the passageway or a vicinity thereof adjacent to the plasma processing chamber.  
     
     
         38 . The method of  claim 31 , wherein the substantially reducing includes producing a magnetic field at least in the passageway or a vicinity thereof adjacent to the plasma processing chamber.  
     
     
         39 . The method of  claim 31 , wherein the substantially reducing includes: 
 producing an electric field at least in the passageway or a vicinity thereof adjacent to the plasma processing chamber; and    producing a magnetic field at least in the passageway or a vicinity thereof adjacent to the plasma processing chamber.    
     
     
         40 . The method of  claim 31 , wherein the substantially reducing includes: 
 providing fluid of a certain temperature substantially around the passageway; and    producing a magnetic field at least in the passageway or a vicinity thereof adjacent to the plasma processing chamber.    
     
     
         41 . The method of  claim 40 , wherein the providing fluid of a certain temperature includes heating fluid substantially surrounding the passageway to the certain temperature.  
     
     
         42 . The method of  claim 40 , wherein the providing fluid of a certain temperature includes cooling fluid substantially surrounding the passageway to the certain temperature.  
     
     
         43 . The method of  claim 31 , wherein the substantially reducing includes: 
 providing fluid of a certain temperature substantially around the passageway; and    producing an electric field at least in the passageway or a vicinity thereof adjacent to the plasma processing chamber.    
     
     
         44 . The method of  claim 43 , wherein the providing fluid of a certain temperature includes heating fluid substantially surrounding the passageway to the certain temperature.  
     
     
         45 . The method of  claim 43 , wherein the providing fluid of a certain temperature includes cooling fluid substantially surrounding the passageway to the certain temperature.  
     
     
         46 . The method of  claim 31 , wherein the substantially reducing includes: 
 providing fluid of a certain temperature substantially around the passageway;    producing an electric field at least in the passageway or a vicinity thereof adjacent to the plasma processing chamber; and    producing a magnetic field at least in the passageway or a vicinity thereof adjacent to the plasma processing chamber.    
     
     
         47 . The method of  claim 46 , wherein the providing fluid of a certain temperature includes heating fluid substantially surrounding the passageway to the certain temperature.  
     
     
         48 . The method of  claim 46 , wherein the providing fluid of a certain temperature includes cooling fluid substantially surrounding the passageway to the certain temperature.  
     
     
         49 . A plasma processing system comprising: 
 a chamber having an opening of a selected diameter and containing a plasma processing region;    a chuck, constructed and arranged to support a substrate within the chamber in the processing region;    a plasma generator in communication with the chamber, the plasma generator being constructed and arranged to generate a plasma during a plasma process in the plasma processing region;    a diagnostic system having a diagnostic sensor in communication with the chamber;    a passageway formed between the plasma processing region and the diagnostic sensor; and    an electric field generator configured to produce an electric field at least in the passageway or a vicinity thereof adjacent to the plasma processing chamber such that contamination of the diagnostic sensor is reduced.    
     
     
         50 . The plasma processing system of  claim 49 , wherein the electric field generator comprises an electrode assembly having at least one electrode.  
     
     
         51 . The plasma processing system of  claim 50 , further comprising an insulator substantially surrounding the electric field generator.  
     
     
         52 . The plasma processing system of  claim 51 , further comprising a power supply coupled to the electric field generator to supply power to the electric field generator.  
     
     
         53 . The plasma processing system of  claim 52 , wherein the power is DC or RF biased power.  
     
     
         54 . A plasma processing system comprising: 
 a chamber having an opening of a selected diameter and containing a plasma processing region;    a chuck, constructed and arranged to support a substrate within the chamber in the processing region;    a plasma generator in communication with the chamber, the plasma generator being constructed and arranged to generate a plasma during a plasma process in the plasma processing region;    a diagnostic system having a diagnostic sensor in communication with the chamber;    a passageway formed between the plasma processing region and the diagnostic sensor; and    a magnetic field generator configured to produce a magnetic field at least in the passageway or a vicinity thereof adjacent to the plasma processing chamber such that contamination of the diagnostic sensor is reduced.    
     
     
         55 . The plasma processing system of  claim 54 , further comprising a magnetic field leakage reducing member substantially surrounding the magnetic field generator.  
     
     
         56 . The plasma processing system of  claim 54 , wherein the magnetic field generator comprises a plurality of magnets.  
     
     
         57 . The plasma processing system of  claim 56 , wherein the plurality of magnets is positioned around the passageway such that each magnet of the plurality of magnets has a polarization direction separated from a polarization direction of an adjacent magnet by twice the separation angle between the magnets.  
     
     
         58 . The plasma processing system of  claim 56 , wherein the plurality of magnets is positioned around the passageway such that each magnet of the plurality of magnets has a polarization direction directed in the same radial direction.  
     
     
         59 . The plasma processing system of  claim 56 , wherein the plurality of magnets is positioned around the passageway such that alternate magnets of the plurality of magnets have a polarization direction directed in opposite radial directions.  
     
     
         60 . The plasma processing system of  claim 55 , wherein the magnetic field generator comprises at least one current-carrying coil.  
     
     
         61 . A plasma processing system comprising: 
 a chamber having an opening of a selected diameter and containing a plasma processing region;    a chuck, constructed and arranged to support a substrate within the chamber in the processing region;    a plasma generator in communication with the chamber, the plasma generator being constructed and arranged to generate a plasma during a plasma process in the plasma processing region;    a diagnostic system having a diagnostic sensor in communication with the chamber;    a passageway formed between the plasma processing region and the diagnostic sensor; and    a temperature controlled system including a fluid chamber surrounding the passageway, the temperature controlled system being capable of controlling a temperature of a fluid within the fluid chamber.    
     
     
         62 . The plasma processing system of  claim 61 , wherein the temperature controlled system includes a fluid inlet in communication with the fluid chamber and a fluid outlet in communication with the fluid chamber, wherein the fluid having a certain temperature can be supplied to the fluid chamber through the fluid inlet and can be removed from the fluid chamber through the fluid outlet.  
     
     
         63 . The plasma processing system of  claim 61 , wherein the temperature controlled system is configured to heat the fluid within the fluid chamber to the certain temperature.  
     
     
         64 . The plasma processing system of  claim 61 , wherein the temperature controlled system is configured to cool the fluid within the fluid chamber to the certain temperature.  
     
     
         65 . A method for operating a diagnostic system in conjunction with a plasma processing system having a processing chamber containing a plasma processing region in which a plasma can be generated during a plasma process, the diagnostic system including a diagnostic sensor and being coupled to the plasma processing region, the method comprising: 
 producing an electric field at least in a passageway formed between the plasma processing chamber and the diagnostic sensor or a vicinity thereof adjacent to the plasma processing chamber to substantially reduce contamination of the diagnostic sensor; and    detecting a condition of the plasma process and/or a substrate in the processing chamber with the diagnostic sensor.    
     
     
         66 . A method for operating a diagnostic system in conjunction with a plasma processing system having a processing chamber containing a plasma processing region in which a plasma can be generated during a plasma process, the diagnostic system including a diagnostic sensor and being coupled to the plasma processing region, the method comprising: 
 producing a magnetic field at least in a passageway formed between the plasma processing chamber and the diagnostic sensor or a vicinity thereof adjacent to the plasma processing chamber to substantially reduce contamination of the diagnostic sensor; and    detecting a condition of the plasma process and/or a substrate in the processing chamber with the diagnostic sensor.    
     
     
         67 . A method for operating a diagnostic system in conjunction with a plasma processing system having a processing chamber containing a plasma processing region in which a plasma can be generated during a plasma process, the diagnostic system including a diagnostic sensor and being coupled to the plasma processing region, the method comprising: 
 controlling a temperature of a fluid within a fluid chamber surrounding a passageway formed between the plasma processing chamber and the diagnostic sensor to substantially reduce contamination of the diagnostic sensor; and    detecting a condition of the plasma process and/or a substrate in the processing chamber with the diagnostic sensor.    
     
     
         68 . The plasma processing system of  claim 3 , wherein at least one of the restrictor element and a mounting portion substantially surrounding the passageway are made from a metal, a dielectric material and a semiconductor material.  
     
     
         69 . The plasma processing system of  claim 49 , wherein the diagnostic system includes a restrictor element positioned in the passageway.  
     
     
         70 . The plasma processing system of  claim 69 , wherein at least one of the restrictor element and a mounting portion substantially surrounding the passageway are made from a metal, a dielectric material and a semiconductor material.  
     
     
         71 . The plasma processing system of  claim 54 , wherein the diagnostic system includes a restrictor element positioned in the passageway.  
     
     
         72 . The plasma processing system of  claim 71 , wherein at least one of the restrictor element and a mounting portion substantially surrounding the passageway are made from a metal, a dielectric material and a semiconductor material.  
     
     
         73 . The plasma processing system of  claim 61 , wherein the diagnostic system includes a restrictor element positioned in the passageway.  
     
     
         74 . The plasma processing system of  claim 63 , wherein at least one of the restrictor element and a mounting portion substantially surrounding the passageway are made from a metal, a dielectric material and a semiconductor material.