Wordline structures including stabilized 193nm resist

Abstract

A structure comprising a single layered patterned photoresist at wavelengths of 193 nanometers or less. The patterned photoresist is disposed over a layer of material and stabilized during the etching of windows in the layer of material disposed directly below the photoresist and corresponding to openings patterned in the photoresist.

1 . A structure comprising: 
 a first layer of material having windows etched therethrough; and    a stabilized layer of patterned photoresist overlying the first layer of material, wherein the patterned photoresist is patterned such that openings in the photoresist correspond to the windows in the first layer of material.    
     
     
         2 . The structure, as set forth in  claim 1 , wherein the photoresist comprises a 193 nanometer photoresist.  
     
     
         3 . The structure, as set forth in  claim 1 , wherein the first layer comprises a bottom anti-reflectant coating (BARC) layer.  
     
     
         4 . The structure, as set forth in  claim 1 , wherein the first layer comprises one of SiO 2 , Al, Ti, Tin or BPSG.  
     
     
         5 . The structure, as set forth in  claim 1 , further comprising a plurality of additional layers disposed below the first layer.  
     
     
         6 . The structure, as set forth in  claim 5 , wherein the plurality of additional layers comprise: 
 a dielectric layer disposed below the first layer;    a conductive layer disposed below the dielectric layer;    a barrier layer disposed below the conductive layer; and    a substrate disposed below the barrier layer.    
     
     
         7 . The structure, as set forth in  claim 5 , wherein the plurality of additional layers have windows etched therethrough, wherein the windows in the additional layers correspond to the windows in the first layer.  
     
     
         8 . The structure, as set forth in  claim 7 , wherein the structure comprises a plurality of wordlines.  
     
     
         9 . The structure, as set forth in  claim 1 , wherein the patterned photoresist is stabilized during the etching of the windows in the first layer.  
     
     
         10 . The structure, as set forth in  claim 1 , wherein the stabilized layer of patterned photoresist does not have striations.  
     
     
         11 . The structure, as set forth in  claim 1 , wherein the patterned photoresist is stabilized using a fluorine source, a polymer source, and an oxygen source.  
     
     
         12 . A structure comprising: 
 a first layer of material having windows etched therethrough; and    a layer of patterned photoresist having no striations overlying the first layer of material, wherein the patterned photoresist is patterned such that openings in the photoresist correspond to the windows in the first layer of material.    
     
     
         13 . The structure, as set forth in  claim 12 , wherein the photoresist comprises a 193 nanometer photoresist.  
     
     
         14 . The structure, as set forth in  claim 12 , wherein the first layer comprises a bottom anti-reflectant coating (BARC) layer.  
     
     
         15 . The structure, as set forth in  claim 12 , wherein the first layer comprises one of SiO 2 , Al, Ti, Tin or BPSG.  
     
     
         16 . The structure, as set forth in  claim 12 , further comprising a plurality of additional layers disposed below the first layer.  
     
     
         17 . The structure, as set forth in  claim 16 , wherein the plurality of additional layers comprise: 
 a dielectric layer disposed below the first layer;    a conductive layer disposed below the dielectric layer;    a barrier layer disposed below the conductive layer; and    a substrate disposed below the barrier layer.    
     
     
         18 . The structure, as set forth in  claim 16 , wherein the plurality of additional layers have windows etched therethrough, wherein the windows in the additional layers correspond to the windows in the first layer.  
     
     
         19 . The structure, as set forth in  claim 18 , wherein the structure comprises a plurality of wordlines.  
     
     
         20 . The structure, as set forth in  claim 1 , wherein the patterned photoresist is stabilized during the etching of the windows in the first layer.  
     
     
         21 . The structure, as set forth in  claim 1 , wherein the patterned photoresist is stabilized using a fluorine source, a polymer source, and an oxygen source.