Semiconductor wafer, semiconductor chip, and manufacturing method of semiconductor device

Abstract

By using a small number of needles and contact terminals at burn-in, electric contact check is performed between each needle and each terminal provided in each semiconductor chip, and thereby the yield of assembled products can be improved. A packaging structure in which, for example, a volatile memory chip and a nonvolatile memory chip are formed is assembled in accordance with a production scheme in which burn-in of each memory chip is performed while still under the state of a semiconductor wafer, and by forming the packaged structure using the good volatile memory chip subjected to burn-in and likewise, also, the nonvolatile memory chip. At this burn-in, contact check is performed by bringing a needle, provided in a burn-in board, into contact with, for example, six test-only signal terminals of a test circuit formed on each semiconductor chip.

1 - 8 . (canceled)  
   
   
       9 . A manufacturing method of a semiconductor device, the method comprising: 
 manufacturing semiconductor wafers including first semiconductor chips;    performing burn-in of the semiconductor wafers;    cutting the semiconductor wafers to produce a batch of first semiconductor chips; and    assembling ones of the first semiconductor chips to manufacture the semiconductor device.    
   
   
       10 . A manufacturing method of a semiconductor device according to  claim 9 , 
 wherein the performance of the burn-in comprises:    performing a contact check for judging electric connection/non-connection between each needle connected to a test apparatus and each terminal provided in each of the first semiconductor chips of the semiconductor wafer.    
   
   
       11 . A manufacturing method of a semiconductor device according to  claim 9 , 
 wherein the assembling includes:    forming a stacked arrangement of the ones of the first semiconductor chips on a substrate in the semiconductor device.    
   
   
       12 . A manufacturing method of a semiconductor device according to  claim 11 , wherein the substrate is a wiring substrate.