Thin film device and a method of providing thermal assistance therein

Abstract

A thin film device and a method of providing thermal assistance therein is disclosed. Accordingly, a heater material is utilized to thermally assist in the operation of the thin film device. By utilizing a heater material to thermally assist in the operation of the thin film device, a substantial improvement in the accuracy and performance of the thin film device is achieved. A first aspect of the present invention is a thin film device. The thin film device includes at least one patterned thin film layer, a heater material coupled to the at least one patterned thin film layer for providing thermal assistance to the at least one of the patterned thin film layers and a conductor coupled to the heater material for supplying energy to the heater material.

1 - 15 . (canceled)  
   
   
       16 . A method of providing thermal assistance in a thin film device comprising: 
 heating at least one of a plurality of patterned thin film layers by selectively exposing the at least one of the patterned thin film layers to energy from a power source; and    performing an operation with the selectively exposed at least one of the plurality of patterned thin film layers.    
   
   
       17 . The method of  claim 16  wherein the thin film device comprises a magnetic random access memory device.  
   
   
       18 . The method of  claim 16  wherein each of the plurality of magnetic memory elements comprises a spin dependent tunnel junction.  
   
   
       19 . The method of  claim 18  wherein each of the plurality of patterned thin film layers comprises a magnetic memory element.  
   
   
       20 . The method of  claim 19  wherein each of the magnetic memory elements are formed with the following process: 
 depositing a heater material over a dielectric material;    forming a plurality of trenches in a dielectric material; and    forming sidewall material on each of the plurality of trenches wherein the sidewall material is coupled to the heater material; and    forming each of the plurality of magnetic memory elements in contact with the heater material.    
   
   
       21 . The method of  claim 20  wherein the sidewall material comprises at least one of Cu, Au, Ag, Pt, Al.  
   
   
       22 . The method of  claim 20  wherein the power source comprises a radio frequency power source.  
   
   
       23 . The method of  claim 20  wherein the heater material comprises at least one of amorphous silicon and amorphous carbon.  
   
   
       24 . The method of  claim 20  wherein the heater material comprises a metal.  
   
   
       25 . The method of  claim 20  wherein each of the plurality of magnetic memory elements includes a free layer and performing an operation with the selectively exposed at least one of the plurality of magnetic memory elements further comprises switching a magnetic orientation of the free layer of the selectively exposed at least one of the plurality of magnetic memory elements.  
   
   
       26 . The method of  claim 20  wherein forming sidewall material on each of the plurality of trenches further comprises: 
 depositing a conductive material over the plurality of trenches; and    performing an anisotropic etch on the conductive material.    
   
   
       27 . The method of  claim 26  wherein the conductive material comprises at least one of Cu, Au, Ag, Pt, Al.  
   
   
       28 . The method of  claim 27  wherein heating at least one of the plurality of magnetic memory elements by selectively exposing the at least one of the plurality of magnetic memory elements to energy from a power source further comprises: 
 applying energy to the sidewall material whereby energy is transferred to the free layer through the heater material.    
   
   
       29 . The method of  claim 28  wherein applying energy to the sidewall material includes applying the energy to the magnetic memory elements prior to switching the magnetic orientation of the free layer.  
   
   
       30 . The method of  claim 28  wherein applying energy to the sidewall material includes applying the energy to the magnetic memory elements simultaneous to switching the magnetic orientation of the free layer.  
   
   
       30 - 38 . (canceled)