Tuning electrodes used in a reactor for electrochemically processing a microelectric workpiece

Abstract

A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

1 - 100 . (canceled)  
     
     
         101 . A method for electrolytically processing a microelectronic workpiece in a processing chamber, comprising: 
 contacting the surface of the microelectronic workpiece with an electrolytic fluid in the processing chamber;    delivering a plurality of electrical currents through a corresponding plurality of electrodes in the processing chamber; and    adjusting a processing parameter to alter current density at the surface of the workpiece.    
     
     
         102 . The method of  claim 101  wherein adjusting a processing parameter comprises changing the plurality of currents delivered through the corresponding plurality of electrodes while the workpiece is in the processing chamber to provide at least a substantially uniform current density at the surface of the workpiece while material is deposited into micro-feature depressions on the workpiece.  
     
     
         103 . The method of  claim 101  wherein adjusting a processing parameter comprises changing the plurality of currents delivered through the corresponding plurality of electrodes to form a plated layer having a desired thickness profile.  
     
     
         104 . The method of  claim 101  wherein adjusting a processing parameter comprises applying a first set of electrical currents through the corresponding electrodes to provide a substantially uniform current density at the surface of the workpiece while material is deposited into micro-feature depressions on the workpiece and subsequently applying a second set of electrical currents through the corresponding electrodes to form a plated layer having a desired thickness profile.  
     
     
         105 . The method of  claim 104  wherein the desired thickness profile is at least substantially flat across the surface of the workpiece.  
     
     
         106 . The method of  claim 104  wherein the desired thickness profile is thicker at a center portion of the workpiece than at a perimeter portion of the workpiece.  
     
     
         107 . The method of  claim 101 , wherein: 
 the method further comprises (a) filling micro-features on a test wafer using a set of test processing parameters, (b) measuring the layer deposited on the test wafer using the test processing parameters, and (c) determining a set of feature filling processing parameters for filling the micro-features on the workpiece based on the measured layer; and    adjusting the processing parameters comprises changing the test processing parameters to the feature filling processing parameters.    
     
     
         108 . A method for electrolytically processing a microelectronic workpiece in a processing chamber, comprising: 
 contacting the surface of the microelectronic workpiece with an electrolytic fluid in the processing chamber;    generating an electric field in the electrolytic fluid by delivering a plurality of electrical currents through a corresponding plurality of electrodes in the processing chamber; and    changing a parameter of the electric field in the electrolytic fluid to provide at least a substantially uniform current density at the surface of the workpiece for at least a portion of a plating cycle.    
     
     
         109 . The method of  claim 108  wherein changing a parameter of the electric field comprises altering the plurality of currents delivered through the corresponding plurality of electrodes while filling micro-features on the workpiece.  
     
     
         110 . The method of  claim 108  wherein changing a parameter of the electric field comprises altering the plurality of currents delivered through the corresponding plurality of electrodes to form a plated layer having a desired thickness profile after filling micro-features on the workpiece.  
     
     
         111 . The method of  claim 108  wherein changing a parameter of the electric field comprises applying a first set of electrical currents through the corresponding electrodes to provide a substantially uniform current density at the surface of the workpiece while filling micro-features on the workpiece and subsequently applying a second set of electrical currents through the corresponding electrodes to form a plated layer having a desired thickness profile after filling the micro-features.  
     
     
         112 . The method of  claim 111  wherein the desired thickness profile is at least substantially flat across the surface of the workpiece.  
     
     
         113 . The method of  claim 111  wherein the desired thickness profile is thicker at a center portion of the workpiece than at a perimeter portion of the workpiece.  
     
     
         114 . The method of  claim 108 , wherein: 
 the method further comprises (a) filling micro-features on a test wafer using a set of test processing parameters, (b) measuring the layer deposited on the test wafer using the test processing parameters, and (c) determining a set of feature filling processing parameters for filling the micro-features on the workpiece based on the measured layer; and    changing the parameter of the electric field comprises altering the processing parameters to the test feature filling processing parameters.    
     
     
         115 . A method for electrolytically processing a microelectronic workpiece in a processing chamber, comprising: 
 contacting the surface of the microelectronic workpiece with an electrolytic fluid in the processing chamber;    generating an electric field in the electrolytic fluid by delivering a plurality of electrical currents through a corresponding plurality of electrodes in the processing chamber; and    changing a parameter of the electric field in the electrolytic fluid while the workpiece is in the processing chamber by delivering a plurality of different electrical currents through the corresponding plurality of electrodes in the processing chamber.    
     
     
         116 . The method of  claim 115  wherein delivering the plurality of currents through the corresponding plurality of electrodes comprises delivering a set of currents that provides at least a substantially uniform current density at the surface of the workpiece while filling micro-features on the workpiece.  
     
     
         117 . The method of  claim 116  wherein delivering a plurality of different currents through the corresponding plurality of electrodes further comprises delivering a set of currents that form a plated layer having a desired thickness profile after filling the micro-features on the workpiece.  
     
     
         118 . The method of  claim 115  wherein delivering a plurality of different currents through the corresponding plurality of electrodes comprises delivering a set of currents that form a plated layer having a desired thickness profile.  
     
     
         119 . The method of  claim 118  wherein the desired thickness profile is at least substantially flat across the surface of the workpiece.  
     
     
         120 . The method of  claim 118  wherein the desired thickness profile is thicker at a center portion of the workpiece than at a perimeter portion of the workpiece.  
     
     
         121 . The method of  claim 115 , wherein: 
 the method further comprises (a) filling micro-features on a test wafer using a set of test processing parameters, (b) measuring the layer deposited on the test wafer using the test processing parameters, and (c) determining a set of feature filling processing parameters for filling the micro-features on the workpiece based on the measured layer; and    changing the parameter of the electric field comprises changing the test processing parameters to the feature filling processing parameters.