Back-biased face target sputtering based memory

Abstract

Systems and methods are disclosed for forming memory arrays on a substrate in an air-tight chamber in which an inert gas is admittable and exhaustible; a pair of target plates placed at opposite ends of said air-tight chamber respectively so as to face each other and form a plasma region therebetween; a pair of magnets respectively disposed adjacent to said target plates such that magnet poles of different polarities face each other across said plasma region thereby to establish a magnetic field of said plasma region between said target plates; a substrate holder disposed adjacent to said plasma region, said substrate holder adapted to hold a substrate on which an alloyed thin film is to be deposited; and a back-bias power supply coupled to the substrate holder.

1 . A facing targets sputtering device for semiconductor fabrication, comprising: 
 an air-tight chamber in which an inert gas is admittable and exhaustible;    a pair of target plates placed at opposite ends of said air-tight chamber respectively so as to face each other and form a plasma region therebetween;    a pair of magnets respectively disposed adjacent to said target plates such that magnet poles of different polarities face each other across said plasma region thereby to establish a magnetic field of said plasma region between said target plates;    a substrate holder disposed adjacent to said plasma region, said substrate holder adapted to hold a substrate on which an alloyed thin film is to be deposited;    a back-bias power supply coupled to the substrate holder; wherein the substrate includes one or more memory arrays formed thereon.    
     
     
         2 . A facing targets sputtering device according to  claim 1 , wherein the back-bias power supply is a DC or an AC electric power source.  
     
     
         3 . A facing targets sputtering device according to  claim 1 , further comprising a first target power supply coupled to one of the target plates.  
     
     
         4 . A facing targets sputtering device according to  claim 3 , wherein the first target power supply is a DC or an AC electric power source.  
     
     
         5 . A facing targets sputtering device according to  claim 1 , further comprising a second target power supply coupled to the remaining target plate.  
     
     
         6 . A facing targets sputtering device according to  claim 1 , wherein the first and second target power supplies comprises DC and AC electric power sources.  
     
     
         7 . A facing targets sputtering device according to  claim 1 , further comprising a robot arm to move the wafer.  
     
     
         8 . A facing targets sputtering device according to  claim 1 , further comprising a magnetron coupled to the chamber.  
     
     
         9 . A facing targets sputtering device according to  claim 1 , further comprising a chuck heater mounted above the wafer.  
     
     
         10 . The apparatus of  claim 1 , wherein the FTS further comprises first and second targets mounted in parallel.  
     
     
         11 . The apparatus of  claim 10 , further comprising magnets positioned between the first and second targets.  
     
     
         12 . The apparatus of  claim 10 , further comprising a power supply coupled to the magnets and the targets.  
     
     
         13 . The apparatus of  claim 10 , wherein the substrates are positioned perpendicularly to the planes of the targets.  
     
     
         14 . The apparatus of  claim 13 , further comprising a substrate holder to secure the substrate.  
     
     
         15 . The apparatus of  claim 1 , wherein the semiconductor layer is a CMOS layer.  
     
     
         16 . A method for sputtering a thin film onto a substrate, comprising: 
 providing at least one target and a substrate having a film-forming surface portion and a back portion;    creating a magnetic field so that the film-forming surface portion is placed in the magnetic field with the magnetic field induced normal to the substrate surface portion    back-biasing the back portion of the substrate; and    sputtering material onto the film-forming surface portion, wherein the thin forming surface portion comprises a memory cell.    
     
     
         17 . A method as in  claim 16  including providing a pair of said targets opposed to each other where the substrate is disposed between the targets.  
     
     
         18 . A method as in  claim 16 , further comprising swinging the wafer using a pendulum.  
     
     
         19 . A method as in  claim 16 , further comprising supporting a chuck from underneath rather than side-way.  
     
     
         20 . A method as in  claim 16 , further comprising providing a plurality of sources to deposit materials onto the substrate.