Solid-state imaging device and method for producing the same

Abstract

In a solid-state imaging device, a light-shielding film 10 a is formed of at least one of a high melting point metal film or a high melting point metal compound film. The surface of the light-shielding film 10 a is constituted by an amorphous silicon film 13. Instead of the amorphous silicon film 13, the surface of the light-shielding film may be covered with any one of a high melting point metal film containing silicon, a high melting point metal silicide film and an oxide film. Thus, the adherence between the light-shielding film 10 a and the resist can be increased and the resist can be prevented from being peeled from the light-shielding film, and thus a solid-state imaging device with a high yield even with small pixels and a method for producing the same can be provided.

1 . A solid-state imaging device outputting an electrical signal in accordance with an amount of incident light, comprising: 
 a light-receiving portion that is formed on a semiconductor substrate; and    a light-shielding film in which an opening portion is formed above the light-receiving portion,    wherein the light-shielding film includes at least one of a high melting point metal film and a high melting point metal compound film having a light-shielding property, and a surface of the light-shielding film has a property of adsorbing or bonding to a hydroxyl group when it is in contact with air.    
     
     
         2 . The solid-state imaging device according to  claim 1 , wherein the surface of the light-shielding film contains silicon.  
     
     
         3 . The solid-state imaging device according to  claim 1 , wherein the surface of the light-shielding film is formed of either one of a high melting point metal film containing silicon, an amorphous silicon film, a high melting point metal silicide film and an oxide film.  
     
     
         4 . The solid-state imaging device according to  claim 3 , wherein the high melting point metal film containing silicon is a tungsten film containing silicon.  
     
     
         5 . The solid-state imaging device according to  claim 3 , wherein the high melting point metal film containing silicon contains silicon at least at 10 atm %.  
     
     
         6 . A method for producing a solid-state imaging device comprising a light-shielding film on a semiconductor substrate in which a light-receiving portion is formed, the light-shielding film having an opening portion above the light-receiving portion, the method comprising: 
 a metal film formation step of forming at least one of a high melting point metal film and a high melting point metal compound film having a light-shielding property on the semiconductor substrate in which the light-receiving portion is formed,    a surface treatment step of providing a surface of the metal film with a property of adsorbing or bonding to a hydroxyl group when it is in contact with air,    a surfactant application step of applying a surfactant onto the film that has been subjected to the surface processing,    a patterning step of applying a resist on the surfactant to form a pattern,    an etching step of performing an etching treatment of the metal film that has been subjected to the surface processing, using the resist formed into a pattern as a mask, and    a resist removing step of removing the resist.    
     
     
         7 . The method for producing a solid-state imaging device according to  claim 6 , wherein in the surface treatment step, a gas containing silicon is allowed to flow along the surface of the metal film so that silicon is contained in the metal film.  
     
     
         8 . The method for producing a solid-state imaging device according to  claim 6 , wherein in the surface treatment step, a gas containing silicon is allowed to flow along the surface of the metal film so that an amorphous silicon film is formed on the metal film.  
     
     
         9 . The method for producing a solid-state imaging device according to  claim 6 , wherein in the surface treatment step, a high melting point metal silicide film is formed on the metal film.  
     
     
         10 . The method for producing a solid-state imaging device according to  claim 6 , wherein in the surface treatment step, an oxide film is formed on the metal film.