Photochemical hole burning media

Abstract

A photochemical hole burning medium is composed of a material in which a rare earth complex and a reducing agent is dispersed in a solid matrix. The rare earth complex may be at least one complex selected from the group consisting of a europium (III) crown ether complex, a europium (III) polyether complex, and a europium (III) cryptand complex.

1 . A photochemical hole burning medium, comprising a material in which a rare earth complex and a reducing agent dispersed in a solid matrix, wherein 
 the photochemical hole burning medium is used at low temperatures; and    said rare earth complex is at least one complex selected from the group consisting of a europium (III) crown ether complex, a europium (III) polyether complex, and a europium (III) cryptand complex.    
     
     
         2 . The photochemical hole burning medium set forth in  claim 1 , wherein said rare earth complex and said reducing agent constitute an electron-donating composite compound.  
     
     
         3 . The photochemical hole burning medium set forth in  claim 2 , wherein said electron-donating composite compound is a silane compound or a disilazane compound.  
     
     
         4 . The photochemical hole burning medium set forth in  claim 3 , wherein said silane compound or the disilazane compound is a hexaalkyl disilazane represented by hexamethyl disilane or a hexaalkyldisilazane.  
     
     
         5 . The photochemical hole burning medium set forth in  claim 2 , wherein said electron-donating composite compound is an organic tin compound.  
     
     
         6 . The photochemical hole burning medium set forth in  claim 1 , wherein said solid matrix is at least one glass-forming compound selected from the group consisting of silica, germanium oxide, boron oxide, phosphorus pentaoxide and tellurium oxide.  
     
     
         7 . The photochemical hole burning medium set forth in  claim 2 , wherein said solid matrix is at least one glass-forming compound selected from the group consisting of silica, germanium oxide, boron oxide, phosphorus pentaoxide and tellurium oxide.  
     
     
         8 . The photochemical hole burning medium set forth in  claim 3 , wherein said solid matrix is at least one glass-forming compound selected from the group consisting of silica, germanium oxide, boron oxide, phosphorus pentaoxide and tellurium oxide.  
     
     
         9 . The photochemical hole burning medium set forth in  claim 4 , wherein said solid matrix is at least one glass-forming compound selected from the group consisting of silica, germanium oxide, boron oxide, phosphorus pentaoxide and tellurium oxide.  
     
     
         10 . The photochemical hole burning medium set forth in  claim 5 , wherein said solid matrix is at least one glass-forming compound selected from the group consisting of silica, germanium oxide, boron oxide, phosphorus pentaoxide and tellurium oxide.  
     
     
         11 . The photochemical hole burning medium set forth in  claim 6 , wherein at least one compound selected from the group consisting of Al 2 O 3 , Ga 2 O 3 , In 2 O 3 , TiO 2 , ZrO 2 , Nb 2 O 5  and Ta 2 O 5  is contained in said solid matrix.  
     
     
         12 . The photochemical hole burning medium set forth in  claim 7 , wherein at least one compound selected from the group consisting of Al 2 O 3 , Ga 2 O 3 , In 2 O 3 , TiO 2 , ZrO 2 , Nb 2 O 5  and Ta 2 O 5  is contained in said solid matrix.  
     
     
         13 . The photochemical hole burning medium set forth in  claim 8 , wherein at least one compound selected from the group consisting of Al 2 O 3 , Ga 2 O 3 , In 2 O 3 , TiO 2 , ZrO 2 , Nb 2 O 5  and Ta 2 O 5  is contained in said solid matrix.  
     
     
         14 . The photochemical hole burning medium set forth in  claim 9 , wherein at least one compound selected from the group consisting of Al 2 O 3 , Ga 2 O 3 , In 2 O 3 , TiO 2 , ZrO 2 , Nb 2 O 5  and Ta 2 O 5  is contained in said solid matrix.  
     
     
         15 . The photochemical hole burning medium set forth in  claim 10 , wherein at least one compound selected from the group consisting of Al 2 O 3 , Ga 2 O 3 , In 2 O 3 , TiO 2 , ZrO 2 , Nb 2 O 5  and Ta 2 O 5  is contained in said solid matrix.  
     
     
         16 . The photochemical hole burning medium set forth in  claim 1 , wherein the reducing agent has an oxidation/reduction potential of not more than 1 V.  
     
     
         17 . The photochemical hole burning medium set forth in  claim 2 , wherein the reducing agent has an oxidation/reduction potential of not more than 1 V.  
     
     
         18 . The photochemical hole burning medium set forth in  claim 3 , wherein the reducing agent has an oxidation/reduction potential of not more than 1 V.  
     
     
         19 . The photochemical hole burning medium set forth in  claim 4 , wherein the reducing agent has an oxidation/reduction potential of not more than 1 V.  
     
     
         20 . The photochemical hole burning medium set forth in  claim 5 , wherein the reducing agent has an oxidation/reduction potential of not more than 1 V.