Semiconductor laser device having lower threshold current

Abstract

A semiconductor laser device includes a QW active layer structure including a Ga x In 1-x As 1-y Sb y layer wherein 0.3≦1-x and 0.003≦y≦0.008, or a QW active layer structure including a Ga x In 1-x A s1-y2 N y1 Sb y2 layer wherein 0.3≦1-x, 0<y1<0.03 and 0.002≦y2≦0.06. The semiconductor laser device suppresses the three-dimensional epitaxial growth, and has superior optical characteristics including a low threshold current.

1 - 6 . (canceled)  
     
     
         7 . A method of making a QW layer for a semiconductor laser comprising depositing a layer of Ga, In, As, and Sb onto a GaAs substrate, wherein said In is included at an atomic ratio of 30% or more relative to Group-III elements, and wherein said depositing is performed with a partial pressure of Sb that is sufficient to form an active layer of about 0.3% to about 0.8% in atomic ratio of Sb relative to Group-V elements.  
     
     
         8 . A method of making a QW layer for a semiconductor laser comprising depositing a layer of Ga, In, N, As, and Sb onto a GaAs substrate, wherein said In is included at an atomic ratio of 30% or more relative to Group-III elements, and wherein said depositing is performed with a partial pressure of Sb that is sufficient to form an active layer of about 0.2% to about 6% in atomic ratio of Sb relative to Group-V elements.  
     
     
         9 . The method of  claim 8 , wherein said active layer is deposited between barrier layers of GaN z As 1-z .  
     
     
         10 . The method of  claim 9 , additionally comprising heat treating said active layer after deposition at a temperature of about 675 to 725 degrees C.  
     
     
         11 - 23 . (canceled)  
     
     
         24 . A method of making a semiconductor laser comprising: 
 depositing a first barrier layer of GaN z As 1-z  onto a substrate;    depositing an active layer of Ga x In 1-x As 1-y1-y2 N y1 Sb y2  over said first barrier layer; and depositing a second barrier layer of GaN z As 1-z  over said active layer.    
     
     
         25 . The method of  claim 24 , wherein said substrate comprises GaAs.  
     
     
         26 . The semiconductor laser of  claim 24 , wherein said semiconductor laser comprises a VCSEL.  
     
     
         27 . The semiconductor laser of  claim 24 , wherein said semiconductor laser comprises an edge emitting laser.  
     
     
         28 . The method of  claim 24 , wherein 0.3 1-x , wherein 0≦y1≦0.03, and wherein 0.002≦y2≦0.06.  
     
     
         29 . The method of  claim 24  wherein 0<z≦0.05.  
     
     
         30 . The method of  claim 24 , additionally comprising heat treating said layers at a temperature of about 675 to about 725 degrees C.  
     
     
         31 . A method for manufacturing a semiconductor laser device comprising: 
 forming a laser structure by depositing a QW active layer structure over a substrate, wherein said QW active layer structure includes at least one QW layer comprising Ga x In 1-x As 1-y1-y2 N y1 Sb y2 , wherein 0.3≦1-x, wherein 0≦y1≦0.007, and wherein 0.002≦y2≦0.06, and    heat treating said laser structure, after growth of said QW active layer structure at a temperature of about 570 to 630 degrees C.    
     
     
         32 . A method for manufacturing a semiconductor laser device comprising: 
 forming a laser structure by depositing a QW active layer structure over a substrate, wherein said QW active layer structure includes at least one QW layer comprising Ga x In 1-x As 1-y1-y2 N y1 Sb y2 , wherein 0.3 1-x , wherein 0.007≦y1≦0.03, and wherein 0.002≦y2≦0.06, and    heat treating said laser structure, after growth of said QW active layer structure at a temperature of about 670 to 730 degrees C.