Nitride based semiconductor light-emitting device

Abstract

Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Al x1 In y1 Ga (1−x1−y1) N (where 0≦x 1 ≦1, 0≦y 1 ≦1, and 0≦x 1 +y 1 ≦1), a multiple quantum well-structured active layer made of undoped In A Ga 1−A N (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type In y2 Ga 1−y2 N (where 0≦y 2 <1) formed on the active layer and a second layer made of p-type Al x3 In y3 Ga (1−x3−y3) N (where 0<x 3 ≦1, 0≦y 3 ≦1, and 0<x 3 +y 3 ≦1) formed on the first layer.

1 . A nitride-based semiconductor light-emitting device, comprising: 
 an n-type clad layer made of n-type Al x1 In y1 Ga (1−x1−y1) N (where 0≦x 1 ≦1, 0≦y 1 ≦1, and 0≦x 1 +y 1 ≦1);    a multiple quantum well-structured active layer made of undoped In A Ga 1−A N (where 0<A<1) formed on the n-type clad layer; and    a p-type clad layer formed on the active layer, including at least a first layer made of p-type In y2 Ga 1−y2 N (where 0≦y 2 <1) formed on the active layer and a second layer made of p-type Al x3 In y3 Ga (1−x3−y3) N (where 0<x 3 ≦1, 0≦y 3 ≦1, and 0<x 3 +y 3 ≦1) formed on the first layer.    
     
     
         2 . The nitride-based semiconductor light-emitting device according to  claim 1 , wherein the first layer has a higher doping concentration than the second layer.  
     
     
         3 . The nitride-based semiconductor light-emitting device according to  claim 1 , wherein the first layer has a thickness of about 100 nm or less,  
     
     
         4 . The nitride-based semiconductor light-emitting device according to  claim 3 , wherein the first layer has a thickness of about 10 nm to about 30 nm.  
     
     
         5 . The nitride-based semiconductor light-emitting device according to  claim 1 , wherein the p-type clad layer further includes a third layer made of p-type In y4 Ga 1−y4 N (where 0≦y 4 <1) formed on the second layer.  
     
     
         6 . The nitride-based semiconductor light-emitting device according to  claim 5 , wherein the third layer consist of a low concentration p-type GaN semiconductor layer having a first doping concentration formed on the second layer, and a high concentration p-type GaN semiconductor layer having a concentration higher than the first doping concentration formed on the low concentration p-type GaN semiconductor layer.  
     
     
         7 . The nitride-based semiconductor light-emitting device according to  claim 5 , wherein the second layer has a thickness of about 50 nm to about 200 nm.  
     
     
         8 . The nitride-based semiconductor light-emitting device according to  claim 7 , wherein the p-type clad layer has a thickness of at least 160 nm.  
     
     
         9 . The nitride-based semiconductor light-emitting device according to  claim 1 , wherein the first layer is a GaN semiconductor layer and the second layer is an AlGaN semiconductor layer.  
     
     
         10 . The nitride-based semiconductor light-emitting device according to  claim 1 , wherein the n-type clad layer is a GaN semiconductor layer.