Systems and methods of plating via interconnects

Abstract

Methods for filling high aspect ratio vias with conductive material. At least one high aspect ratio via is formed in the backside of a semiconductor substrate. The at least one via is closed at one end by a conductive element forming a conductive structure of the semiconductor substrate. The backside of the semiconductor substrate is exposed to an electroplating solution containing a conductive material in solution with the active surface semiconductor substrate isolated therefrom. An electric potential is applied across the conductive element through the electroplating solution and a conductive contact pad in direct or indirect electrical communication with the conductive element at the closed end of the at least one via (or forming such conductive element) to cause conductive material to electrochemically deposit from the electroplating solution and fill the at least one via. Semiconductor devices and in-process semiconductor devices are also disclosed.

1 . A system for placing conductive material in at least one via in a semiconductor substrate, the system comprising: 
 a container for forming a reservoir for containing an electroplating solution in contact with a semiconductor substrate, wherein a major surface of the semiconductor substrate forms a portion of a surface of the reservoir;    at least one seal for sealing the container to the major surface of the semiconductor substrate; and    a contact pad for contacting a conductive material another opposing major surface of the semiconductor substrate in electrical contact with a conductive element at a bottom of at least one via extending from the major surface of the semiconductor substrate.    
   
   
       2 . The system of  claim 1 , wherein the at least one seal for sealing the container to the major surface of the semiconductor substrate comprises a seal locate and configured to isolate another opposing major surface of the semiconductor substrate from contact with the electroplating solution.  
   
   
       3 . The system of  claim 1 , wherein the at least one seal is selected from the group consisting of an O-ring, a flexible elastomer face seal, and a wiper type seal.  
   
   
       4 . The system of  claim 1 , wherein the at least one seal comprises an adhesive disposed between the container and the major surface of the semiconductor substrate.  
   
   
       5 . The system of  claim 1 , wherein the conductive contact pad comprises a plate.  
   
   
       6 . The system of  claim 5 , wherein the conductive contact pad comprises a plate with a number of probe elements extending therefrom.  
   
   
       7 . The system of  claim 1 , wherein the contact pad comprises a contact structure having a deformable polymeric surface bearing conductive elements.  
   
   
       8 . The system of  claim 1 , wherein the conductive contact pad comprises a furry surface.  
   
   
       9 . The system of  claim 8 , wherein the conductive contact pad comprises a conductive polymeric material.  
   
   
       10 . The system of  claim 1 , wherein the major surface of the semiconductor substrate forms the bottom surface of the reservoir.  
   
   
       11 . The system of  claim 1 , further comprising a system for achieving reduced ambient pressure in the reservoir relative to the ambient pressure outside the reservoir.  
   
   
       12 . The system of  claim 1 , wherein the container for forming a reservoir may be drained by rotating the reservoir about a horizontal axis.  
   
   
       13 . A system for plating conductive material on a semiconductor substrate, the system comprising: 
 a bottomless vessel for forming a reservoir for containing an electroplating solution in contact with a bulk semiconductor substrate, wherein a major surface of the bulk semiconductor substrate forms the bottom of the reservoir; and    at least one seal for sealing the bottomless vessel to the major surface of the bulk semiconductor substrate.    
   
   
       14 . The system of  claim 13 , wherein the least one seal comprises a seal located and configured to isolate another opposing major surface of the bulk semiconductor substrate from contact with the electroplating solution.  
   
   
       15 . The system of  claim 13 , wherein the at least one seal is selected from the group consisting of an O-ring, a flexible elastomer face seal, and a wiper type seal.  
   
   
       16 . The system of  claim 13 , wherein the at least one seal comprises an adhesive disposed between the bottomless vessel and the major surface of the semiconductor substrate.  
   
   
       17 . The system of  claim 13 , further comprising a conductive contact pad for contacting a conductive material on another opposing major surface of the bulk semiconductor substrate in electrical contact with a conductive element at a bottom of at least one via extending from the major surface of the semiconductor substrate  
   
   
       18 . The system of  claim 17 , wherein the conductive contact pad comprises a plate for contacting the another opposing major surface of the semiconductor substrate.  
   
   
       19 . The system of  claim 18 , wherein the conductive contact pad comprises a plate with a number of probe elements extending therefrom.  
   
   
       20 . The system of  claim 17 , wherein the conductive contact pad comprises a contact structure having a deformable polymeric surface bearing conductive elements.  
   
   
       21 . The system of  claim 17 , wherein the conductive contact pad comprises a furry surface.  
   
   
       22 . The system of  claim 13 , wherein the bottomless vessel may be drained by rotating the vessel about a horizontal axis.  
   
   
       23 . A method of creating a reservoir for plating conductive material on a semiconductor substrate, the method comprising: 
 providing a bottomless vessel; and    sealing a major surface of a semiconductor substrate to the bottomless vessel.    
   
   
       24 . The method of  claim 23 , wherein sealing a major surface of a semiconductor substrate to the bottomless vessel comprises isolating another, opposing major surface of the bulk semiconductor substrate from contact with an electroplating solution in the reservoir.  
   
   
       25 . The method of  claim 23 , wherein sealing a major surface of a semiconductor substrate to the bottomless vessel comprises forming a seal between a lower periphery of the bottomless vessel and the major surface of the semiconductor substrate with at least one seal selected from the group consisting of an O-ring, a flexible elastomer face seal, and a wiper type seal.  
   
   
       26 . The method of  claim 23 , wherein sealing a major surface of a semiconductor substrate to the bottomless vessel comprises disposing an adhesive between a lower periphery of the bottomless vessel and the major surface of the semiconductor substrate.  
   
   
       27 . The method of  claim 23 , further comprising contacting a conductive contact pad to a conductive material on another, opposing major surface of the semiconductor substrate in electrical contact with a conductive element at a bottom of at least one via extending from the major surface of the semiconductor substrate.  
   
   
       28 . The method of  claim 27 , wherein contacting a conductive contact pad to a conductive material on another, opposing surface of the semiconductor substrate comprises contacting a conductive plate thereto.  
   
   
       29 . The method of  claim 28 , wherein contacting a conductive plate to another, opposing major surface of the semiconductor substrate comprises a contacting a conductive plate with a number of probe elements extending therefrom thereto.  
   
   
       30 . The method of  claim 27 , wherein contacting a conductive contact pad to a conductive material on another, opposing major surface of the semiconductor substrate comprises contacting a conductive contact pad with a furry surface thereto.  
   
   
       31 . The method of  claim 23 , further comprising draining the reservoir by rotating the bottomless vessel and attached semiconductor substrate around a horizontal axis.