Chemical vapor deposition reactor having multiple inlets

Abstract

A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion.

1 . A chemical vapor deposition reactor comprising: 
 a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber;    an inlet disposed proximate a central portion thereof; and    a plurality of injectors configured so as to mitigate depletion.    
     
     
         2 . The chemical vapor deposition reactor as recited in  claim 1 , wherein the injectors comprise group III injectors.  
     
     
         3 . The chemical vapor deposition reactor as recited in  claim 1 , wherein the injectors comprise group III injectors and further comprising a group V inlet disposed proximate a central portion thereof.  
     
     
         4 . The chemical vapor deposition reactor as recited in  claim 1 , wherein the injectors define a plurality of zones, the injectors of each zone having a dedicated flow controller.  
     
     
         5 . The chemical vapor deposition reactor as recited in  claim 1 , wherein the injectors define a three zones, the injectors of each zone having a dedicated flow controller.  
     
     
         6 . The chemical vapor deposition reactor as recited in  claim 1 , wherein the flow through each zone is individually controllable.  
     
     
         7 . The chemical vapor deposition reactor as recited in  claim 1 , wherein the flow through each injector is individually controllable.  
     
     
         8 . The chemical vapor deposition reactor as recited in  claim 1 , wherein the reactant concentration through each zone is individually controllable.  
     
     
         9 . The chemical vapor deposition reactor as recited in  claim 1 , wherein the reactant concentration through each injector is individually controllable.  
     
     
         10 . The chemical vapor deposition reactor as recited in  claim 1 , wherein the exhaust is above the wafer carrier.  
     
     
         11 . A method for chemical vapor deposition, the method comprising: 
 rotating a wafer carrier which within a chamber of a reactor, the wafer carrier cooperating with the chamber to facilitate laminar flow of reaction gas within the chamber;    adding gas to the chamber via an inlet disposed proximate a central portion thereof; and    injecting a gas reactant into the chamber via plurality of injectors configured so as to mitigate depletion.    
     
     
         12 . The method as recited in  claim 11 , wherein the gas injected into the chamber via the injectors comprises group III reactants.  
     
     
         13 . The method as recited in  claim 11 , wherein the gas injected into the chamber via the injectors comprises group III reactants and the gas added to the chamber via the inlet comprises a group V reactant.  
     
     
         14 . The method as recited in  claim 11 , further comprising controlling gas flow though groups of injectors, the flow being controlled based upon which one of a plurality of zones the injectors are located within.  
     
     
         15 . The method as recited in  claim 11 , wherein the injectors define three zones, the injectors of each zone having a dedicated flow controller.  
     
     
         16 . The method as recited in  claim 11 , wherein the flow through each zone is individually controllable.  
     
     
         17 . The method as recited in  claim 11 , wherein the flow through each injector is individually controllable.  
     
     
         18 . The method as recited in  claim 11 , wherein the reactant concentration through each zone is individually controllable.  
     
     
         19 . The method as recited in  claim 11 , wherein the reactant concentration through each injector is individually controllable.  
     
     
         20 . The method as recited in  claim 11 , wherein the wafer carrier rotates at a rate between approximately 10 rpm and approximately 1500 rpm.  
     
     
         21 . The method as recited in  claim 11 , wherein the pressure in the reactor is less than or equal to approximately 760 torr.  
     
     
         22 . A lid for a chemical vapor deposition reactor, the lid comprising a plurality of injectors surrounding a central gas inlet.  
     
     
         23 . The lid as recited in  claim 22 , wherein the lid comprises more than twelve injectors.