Protective structures for bond wires

Abstract

Protective structures for bond wires or other intermediate conductive elements of a semiconductor device assembly cover the intermediate conductive elements without covering a substantial portion of a semiconductor device from which the intermediate conductive elements extend. In addition to coating at least portions of one or more intermediate conductive elements, the protective structure may include a fence which is configured to receive a semiconductor device. Such a fence may be formed integrally with the remainder of the protective structure or a separately formed member. The protective structures may be formed from a photopolymer material which has been at least partially cured, for example, by stereolithography processes. Accordingly, the protective structures may include a single layer or a plurality of superimposed, contiguous, mutually adhered layers.

1 . A protective sheath for at least one elongate conductive element, comprising dielectric material and surrounding at least a portion of the at least one elongate conductive element without covering a substantial portion of a semiconductor device component from which the at least one elongate conductive element extends.  
     
     
         2 . The protective sheath of  claim 1 , wherein a nonperipheral portion of the semiconductor device component remains exposed beyond or through the dielectric material.  
     
     
         3 . The protective sheath of  claim 2 , wherein the semiconductor device component comprises an interposer, a carrier, or a test substrate.  
     
     
         4 . The protective sheath of  claim 3 , further comprising a fence member configured to receive a semiconductor device.  
     
     
         5 . The protective sheath of  claim 4 , wherein the fence member comprises a plurality of adjacent, mutually adhered regions.  
     
     
         6 . The protective sheath of  claim 5 , wherein the plurality of adjacent, mutually adhered regions comprises a plurality of superimposed, contiguous, mutually adhered layers.  
     
     
         7 . The protective sheath of  claim 1 , comprising a plurality of adjacent, mutually adhered regions.  
     
     
         8 . The protective sheath of  claim 7 , wherein the plurality of adjacent, mutually adhered regions comprises a plurality of superimposed, contiguous, mutually adhered layers.  
     
     
         9 . The protective sheath of  claim 1 , wherein the semiconductor device component comprises a semiconductor device.  
     
     
         10 . The protective sheath of  claim 1 , wherein the dielectric material comprises a photopolymer.  
     
     
         11 . The protective sheath of  claim 1 , substantially surrounding at least a portion of the at least one elongate conductive element.  
     
     
         12 . A protective sheath for at least one elongate conductive element, comprising dielectric material surrounding an entire periphery of at least a portion of the one elongate conductive element.  
     
     
         13 . The protective sheath of  claim 12 , wherein the dielectric material comprises at least partially cured photopolymer.  
     
     
         14 . The protective sheath of  claim 12 , comprising at least a portion of a fence member configured to receive a semiconductor device  
     
     
         15 . The protective sheath of  claim 14 , wherein the fence member comprises a plurality of adjacent, mutually adhered regions.  
     
     
         16 . The protective sheath of  claim 15 , wherein the plurality of adjacent, mutually adhered regions comprise a plurality of superimposed, contiguous, mutually adhered layers.