Plasma generating apparatus and plasma processing apparatus

Abstract

Provided is a microwave plasma generating apparatus using a multiple open-ended cavity resonator, and a plasma processing apparatus including the microwave plasma generating apparatus. The plasma processing apparatus includes a container for forming a process chamber, a support unit that supports a material to be processed in the process chamber, a dielectric window formed on an upper part of the process chamber, a gas supply unit that inject a process gas into the process chamber, and a microwave supply unit that includes a plurality of resonators for supplying microwaves through the dielectric window.

1 . A plasma processing apparatus comprising: 
 a container for forming a process chamber;    a support unit that supports a material to be processed in the process chamber;    a dielectric window formed on an upper part of the process chamber;    a gas supply unit that inject a process gas into the process chamber; and    a microwave supply unit that includes a plurality of open ended cavity resonators for supplying microwaves through the dielectric window.    
   
   
       2 . The plasma processing apparatus of  claim 1 , wherein the gas supply unit comprises: 
 an upper gas supply unit mounted through the center of the dielectric window;    a first gas supply unit for supplying the process gas to a surface of the material to be processed at a predetermined angle; and    a second gas supply unit configured to have a radially uniform distribution of gas flux.    
   
   
       3 . The plasma processing apparatus of  claim 2 , wherein gas flux through each of the gas supply units is independently controlled.  
   
   
       4 . The plasma processing apparatus of  claim 1 , wherein the plurality of open-ended cavity resonators are open at portions contacting the dielectric window.  
   
   
       5 . The plasma processing apparatus of  claim 1 , wherein the microwave supply unit comprises: 
 a microwave power source for generating microwaves;    a plurality of waveguides;    a coupler for distributing the microwaves generated by the microwave power source to the plurality of waveguides; and    a plurality of open ended cavity resonators connected to a plurality of waveguides, respectively.    
   
   
       6 . The plasma processing apparatus of  claim 5 , wherein radial plasma uniformity in the process chamber can be improved by changing a ratio of microwave power transmitted to each of the waveguides.  
   
   
       7 . The plasma processing apparatus of  claim 5 , wherein each of the waveguides are capable of rotation with respect to an axis of the process chamber.  
   
   
       8 . The plasma processing apparatus of  claim 5 , wherein the plurality of waveguides are configured to be co-axial.  
   
   
       9 . The plasma processing apparatus of  claim 5 , wherein adjacent waveguides share a common wall.  
   
   
       10 . The plasma processing apparatus of  claim 1 , wherein the supporting means is able to move up and down to locate a substrate loaded on the supporting means at a level of optimum plasma uniformity.  
   
   
       11 . A microwave supply unit comprising: 
 a microwave power source for generating microwaves;    a plurality of waveguides;    a coupler for distributing the microwaves generated by the microwave power source to the plurality of waveguides; and    a plurality of resonators.    
   
   
       12 . The microwave supply unit of  claim 11 , wherein the coupler adjusts a ratio of microwave power transmitted to each of the waveguides.  
   
   
       13 . The microwave supply unit of  claim 11 , wherein the waveguides are capable of rotation with respect to each other.  
   
   
       14 . The microwave supply unit of  claim 11 , wherein portions of the plurality of open-ended cavity resonators opposite to the waveguides are open.  
   
   
       15 . The microwave supply unit of  claim 11 , wherein the plurality of waveguides are configured co-axially.  
   
   
       16 . The microwave supply unit of  claim 11 , wherein adjacent waveguides share a common wall.