Polishing apparatus

Abstract

In a polishing apparatus having a cover body with fluid pressing mechanism, during polishing, vibration and migration of sticking portion between a retainer and a membrane generated in downstream of rotation of a polishing platen is prevented by reducing sticking force between the retainer and the membrane to less than force needed to wafer polishing with rotation of the cover body.

1 . Semiconductor device manufacturing method comprising: 
 forming a first insulating film over a semiconductor substrate and then forming a trench for wiring, then forming a first metal film in said trench and on said first insulating film and forming a second metal on said first metal film;    polishing said second metal to expose said first metal film on the first insulating film using a first polishing liquid and then polishing said first metal film to remove said first metal film from said first insulating film using a second polishing liquid;    depositing a second insulating film on said second metal and on said first insulating film;    wherein the polishing of said second metal is conducted using a polishing apparatus, comprising a cover body which is opened at a bottom thereof, has a space therein, and has an elastic membrane indirectly secured to or in a portion of an inner wall thereof through a flexor and a support plate, a surface of the inner wall in a portion at which the secured elastic membrane may contact due to flex of the membrane or the flexor being made of fluororesin, and wherein the cover body covers a side and a backside surface of said semiconductor substrate placed on a polishing pad on a polishing platen, a surface of second metal is polished by providing relative motion between the polishing platen and said semiconductor substrate while a fluid introduced into an upper space above the elastic membrane expands the elastic membrane to press the backside of said semiconductor substrate in a direction toward the polishing platen.    
     
     
         2 . Semiconductor device manufacturing method according to  claim 1 , wherein said first metal film is titanium nitride.  
     
     
         3 . Semiconductor device manufacturing method according to  claim 1 , wherein said second metal is copper.  
     
     
         4 . Semiconductor device manufacturing method according to  claim 1 , wherein said polishing liquid is substantially free of abrasive.  
     
     
         5 . Semiconductor device manufacturing method according to  claim 1 , wherein said first polishing liquid includes BTA.  
     
     
         6 . Semiconductor device manufacturing method comprising of: 
 forming a first insulting film over a semiconductor and then forming a trench for wiring, then forming a first metal film in said trench and on said first insulating film and forming a second metal on said first metal film;    polishing said second metal to expose said first metal film on the first insulating film using a first polishing liquid of substantially free of abrasive and then polishing said first metal film to remove said first metal film from said first insulating film using a second polishing liquid;    depositing a second insulating film on said second metal and on said first insulating film;    wherein the polishing of said second metal is conducted using a polishing apparatus, comprising a rotational polishing platen and a rotational cover body arranged such that it opposes a main surface of the polishing platen through said semiconductor substrate, wherein a bottom of the cover body is opened, the cover body has space therein, an elastic membrane is secured indirectly to or in a portion of an inner wall of the cover body through a flexor and a support plate, the cover body has an introducing inlet that introduces a fluid into space above the elastic membrane, and a surface of the inner wall in a portion at which the elastic membrane may contact due to flex of the membrane of the flexor comprises fluororesin.    
     
     
         7 . Semiconductor device manufacturing method according to  claim 6 , wherein said first metal film is titanium nitride.  
     
     
         8 . Semiconductor device manufacturing method according to  claim 6 , wherein said second metal is copper.  
     
     
         9 . Semiconductor device manufacturing method according to  claim 6 , wherein said first polishing liquid includes BTA.  
     
     
         10 . Semiconductor device manufacturing method comprising of: 
 forming a patterned insulating film over a semiconductor substrate and then forming a first metal film over said patterned insulating film and forming a second metal on said first metal film;    polishing said second metal to expose said first metal film on the patterned insulating film using a first polishing liquid and then polishing said first metal to remove said first metal film from said patterned insulating film using a second polishing liquid;    wherein the polishing of said second metal is conducted using a polishing apparatus, comprising a cover body which is opened at a bottom thereof, has a space therein, and has an elastic membrane indirectly secured to or in a portion of an inner wall thereof through a flexor and a support plate, a surface of the inner wall in a portion at which the secured elastic membrane may contact due to flex of the membrane or the flexor being made of fluororesin, and wherein the cover body covers a side and a backside surface of said semiconductor substrate placed on a polishing pad on a polishing platen, a surface of second metal is polished by providing relative motion between the polishing platen and said semiconductor substrate while a fluid introduced into an upper space above the elastic membrane expends the elastic membrane to press the backside of said semiconductor substrate in a direction toward the polishing platen.    
     
     
         11 . Semiconductor device manufacturing method according to  claim 10 , wherein said first metal film is titanium nitride.  
     
     
         12 . Semiconductor device manufacturing method according to  claim 10 , wherein said second metal is copper.  
     
     
         13 . Semiconductor device manufacturing method according to  claim 10 , wherein said polishing liquid is substantially free of abrasive.  
     
     
         14 . Semiconductor device manufacturing method according to  claim 10 , wherein said first polishing liquid includes BTA.  
     
     
         15 . Semiconductor device manufacturing method comprising: 
 forming at least a first insulating film consisting of at least one layer of film on a semiconductor substrate and then forming trenches for wiring, then forming a first metal film in said trench and on said first insulating film and forming a second metal on said first metal film;    polishing said second metal to expose said first metal film on the first insulating film using a first polishing liquid and then polishing said first metal film to remove said first metal film from said first insulating film using a second polishing liquid;    depositing a second insulating film at least one layer of film on said second metal and on said first insulating film;    wherein the polished of said second metal is conducted using a polishing apparatus, comprising a cover body which is opened at a bottom thereof, has a space therein, and has an elastic membrane indirectly secured to or in a portion of an inner wall thereof through ha flexor and a support plate, a surface of the inner wall in a portion at which the secured elastic membrane may contact due to flex of the membrane or the flexor being made of fluororesin, and wherein the cover body covers a side and a backside surface of said semiconductor substrate placed on a polishing pad on a polishing platen, a surface of second metal is polished by providing relative motion between the polishing platen and said semiconductor substrate while a fluid introduced into an upper space above the elastic membrane expands the elastic membrane to press the backside of said semiconductor substrate in a direction toward the polishing platen.    
     
     
         16 . Semiconductor device manufacturing method according to  claim 1 , wherein said first metal film is titanium nitride.  
     
     
         17 . Semiconductor device manufacturing method according to  claim 1 , wherein said second metal is copper.  
     
     
         18 . Semiconductor device manufacturing method according to  claim 1 , wherein said polishing liquid is substantially free of abrasive.  
     
     
         19 . Semiconductor device manufacturing method according to  claim 1 , wherein said first polishing liquid includes BTA.