US2005170643A1PendingUtilityA1

Forming method of contact hole, and manufacturing method of semiconductor device, liquid crystal display device and EL display device

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Assignee: SEMICONDUCTOR ENERGY LABPriority: Jan 29, 2004Filed: Jan 21, 2005Published: Aug 4, 2005
Est. expiryJan 29, 2024(expired)· nominal 20-yr term from priority
Inventors:Gen FujiiHiroko Shiroguchi
H10D 30/0321H10D 30/0314H10D 30/0316H10D 30/6739H10D 30/6737H10D 30/673H10D 86/441H10D 86/451H10D 30/6729H10D 86/0241H10D 86/00G02F 1/136227G02F 1/136286H10K 59/123
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Claims

Abstract

When forming a contact hole by a conventional manufacturing step of a semiconductor device, a resist is required to be formed on almost entire surface of a substrate so as to be applied on a film other than an area in which a contact hole is to be formed, leading to drastically reduced throughput. According to a forming method of a contact hole and a manufacturing method of a semiconductor device, an EL display device and a liquid crystal display device of the invention, an island shape organic film is selectively formed over a semiconductor layer, a conductive layer or an insulating layer, and an insulating film is formed around the island shape organic film to form a contact hole. Therefore, a conventional patterning using a resist is not required, and high throughput and low cost can be achieved.

Claims

exact text as granted — not AI-modified
1 . A method of manufacturing a semiconductor device, comprising: 
 forming an organic film over a substrate;    forming a mask pattern in an area over the organic film, in which a contact hole is to be formed;    patterning the organic film to an island shape using the mask pattern as a mask;    removing the mask pattern;    forming an insulating film around the island shape organic film;    forming a contact hole by removing the island shape organic film; and    forming a conductor in the contact hole.    
   
   
       2 . A method of manufacturing a semiconductor device, comprising: 
 forming an organic film formed of a silane coupling agent over a substrate;    forming a mask pattern in an area over the organic film, in which a contact hole is to be formed;    patterning the organic film to an island shape using the mask pattern as a mask;    removing the mask pattern;    forming an insulating film around the island shape organic film;    forming a contact hole by removing the island shape organic film; and    forming a conductor in the contact hole.    
   
   
       3 . A method of manufacturing a semiconductor device, comprising: 
 forming an organic film over a substrate by plasma treatment under an atmosphere containing fluorine;    forming a mask pattern in an area over the organic film, in which a contact hole is to be formed;    patterning the organic film to an island shape using the mask pattern as a mask;    removing the mask pattern;    forming an insulating film around the island shape organic film;    forming a contact hole by removing the island shape organic film; and    forming a conductor in the contact hole.    
   
   
       4 . The method of manufacturing a semiconductor device according to  claim 2 , 
 wherein the silane coupling agent is FAS (fluoroalkyl silane).    
   
   
       5 . The method of manufacturing a semiconductor device according to  claim 1 , 
 wherein the mask pattern is formed of PVA (polyvinyl alcohol) or polyimide.    
   
   
       6 . The method of manufacturing a semiconductor device according to  claim 2 , 
 wherein the mask pattern is formed of PVA (polyvinyl alcohol) or polyimide.    
   
   
       7 . The method of manufacturing a semiconductor device according to  claim 3 , 
 wherein the mask pattern is formed of PVA (polyvinyl alcohol) or polyimide.    
   
   
       8 . The method of manufacturing a semiconductor device according to  claim 1 , 
 wherein the insulating film is formed of a polyimide-based resin, an acryl-based resin, a polyamide-based resin, or a material that has a backbone structure obtained by binding silicon to oxygen, and contains at least one hydrogen substituent, or further has at least one substituent selected from fluorine, an alkyl group, or aromatic hydrocarbon in addition to hydrogen.    
   
   
       9 . The method of manufacturing a semiconductor device according to  claim 2 , 
 wherein the insulating film is formed of a polyimide-based resin, an acryl-based resin, a polyamide-based resin, or a material that has a backbone structure obtained by binding silicon to oxygen, and contains at least one hydrogen substituent, or further has at least one substituent selected from fluorine, an alkyl group, or aromatic hydrocarbon in addition to hydrogen.    
   
   
       10 . The method of manufacturing a semiconductor device according to  claim 3 , 
 wherein the insulating film is formed of a polyimide-based resin, an acryl-based resin, a polyamide-based resin, or a material that has a backbone structure obtained by binding silicon to oxygen, and contains at least one hydrogen substituent, or further has at least one substituent selected from fluorine, an alkyl group, or aromatic hydrocarbon in addition to hydrogen.    
   
   
       11 . The method of manufacturing a semiconductor device according to  claim 1 , 
 wherein the insulating film is formed by slit coating or spin coating.    
   
   
       12 . The method of manufacturing a semiconductor device according to  claim 2 , 
 wherein the insulating film is formed by slit coating or spin coating.    
   
   
       13 . The method of manufacturing a semiconductor device according to  claim 3 , 
 wherein the insulating film is formed by slit coating or spin coating.    
   
   
       14 . A method of manufacturing a display device, comprising: 
 forming an organic film over a thin film transistor;    forming a mask pattern in an area over the organic film, in which a contact hole is to be formed;    patterning the organic film to an island shape using the mask pattern as a mask;    removing the mask pattern;    forming an insulating film around the island shape organic film;    forming a contact hole by removing the island shape organic film; and    forming a conductor in the contact hole.    
   
   
       15 . A method of manufacturing a display device, comprising: 
 forming an organic film formed of a silane coupling agent over a thin film transistor;    forming a mask pattern in an area over the organic film, in which a contact hole is to be formed;    patterning the organic film to an island shape using the mask pattern as a mask;    removing the mask pattern;    forming an insulating film around the island shape organic film;    forming a contact hole by removing the island shape organic film; and    forming a conductor in the contact hole.    
   
   
       16 . A method of manufacturing a display device, comprising: 
 forming an organic film over a thin film transistor by plasma treatment under an atmosphere containing fluorine;    forming a mask pattern in an area over the organic film, in which a contact hole is to be formed;    patterning the organic film to an island shape using the mask pattern as a mask;    removing the mask pattern;    forming an insulating film around the island shape organic film;    forming a contact hole by removing the island shape organic film; and    forming a conductor in the contact hole.    
   
   
       17 . The method of manufacturing a display device according to  claim 14 , 
 wherein the display device is an EL display device comprising a layer containing an organic compound or an inorganic compound over the conductor.    
   
   
       18 . The method of manufacturing a display device according to  claim 15 , 
 wherein the display device is an EL display device comprising a layer containing an organic compound or an inorganic compound over the conductor.    
   
   
       19 . The method of manufacturing a display device according to  claim 16 , 
 wherein the display device is an EL display device comprising a layer containing an organic compound or an inorganic compound over the conductor.    
   
   
       20 . The method of manufacturing a display device according to  claim 14 , 
 wherein the display device is a liquid crystal display device comprising a liquid crystal layer over the conductor.    
   
   
       21 . The method of manufacturing a display device according to  claim 15 , 
 wherein the display device is a liquid crystal display device comprising a liquid crystal layer over the conductor.    
   
   
       22 . The method of manufacturing a display device according to  claim 16 , 
 wherein the display device is a liquid crystal display device comprising a liquid crystal layer over the conductor.    
   
   
       23 . The method of manufacturing a display device according to  claim 15 , 
 wherein the silane coupling agent is FAS (fluoroalkyl silane).    
   
   
       24 . The method of manufacturing a display device according to  claim 14 , 
 wherein the mask pattern is formed of PVA (polyvinyl alcohol) or polyimide.    
   
   
       25 . The method of manufacturing a display device according to  claim 15 , 
 wherein the mask pattern is formed of PVA (polyvinyl alcohol) or polyimide.    
   
   
       26 . The method of manufacturing a display device according to  claim 16 , 
 wherein the mask pattern is formed of PVA (polyvinyl alcohol) or polyimide.    
   
   
       27 . The method of manufacturing a display device according to  claim 14 , 
 wherein the insulating film is formed of a polyimide-based resin, an acryl-based resin, a polyamide-based resin, or a material that has a backbone structure obtained by binding silicon to oxygen, and contains at least one hydrogen substituent, or further has at least one substituent selected from fluorine, an alkyl group, or aromatic hydrocarbon in addition to hydrogen.    
   
   
       28 . The method of manufacturing a display device according to  claim 15 , 
 wherein the insulating film is formed of a polyimide-based resin, an acryl-based resin, a polyamide-based resin, or a material that has a backbone structure obtained by binding silicon to oxygen, and contains at least one hydrogen substituent, or further has at least one substituent selected from fluorine, an alkyl group, or aromatic hydrocarbon in addition to hydrogen.    
   
   
       29 . The method of manufacturing a display device according to  claim 16 , 
 wherein the insulating film is formed of a polyimide-based resin, an acryl-based resin, a polyamide-based resin, or a material that has a backbone structure obtained by binding silicon to oxygen, and contains at least one hydrogen substituent, or further has at least one substituent selected from fluorine, an alkyl group, or aromatic hydrocarbon in addition to hydrogen.    
   
   
       30 . The method of manufacturing a display device according to  claim 14 , 
 wherein the insulating film is formed by slit coating or spin coating.    
   
   
       31 . The method of manufacturing a display device according to  claim 15 , 
 wherein the insulating film is formed by slit coating or spin coating.    
   
   
       32 . The method of manufacturing a display device according to  claim 16 , 
 wherein the insulating film is formed by slit coating or spin coating.    
   
   
       33 . The method of manufacturing a display device according to  claim 14 , 
 wherein the display device is applied to an electronic apparatus selected from the group consisting of a TV set, a portable book and a mobile phone.    
   
   
       34 . The method of manufacturing a display device according to  claim 15 , 
 wherein the display device is applied to an electronic apparatus selected from the group consisting of a TV set, a portable book and a mobile phone.    
   
   
       35 . The method of manufacturing a display device according to  claim 16 , 
 wherein the display device is applied to an electronic apparatus selected from the group consisting of a TV set, a portable book and a mobile phone.

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