Chip type capacitor, method for preparing the same and anode terminal used for preparing the same

Abstract

A chip type capacitor is disclosed which has improved bond strength between an anode lead wire and an anode terminal and enhanced reliability. A method for preparing the chip type capacitor and an anode terminal used in the preparation method are also disclosed. The chip type capacitor comprises: a solid electrolytic capacitor element including an element body having an anode body, a dielectric and a cathode body, and an anode lead wire partially extending from the anode body of the element body; and an anode terminal electrically connected to the anode lead wire, the anode lead wire having such a site that about 75% or more of a periphery of a section thereof in the direction substantially perpendicular to the extending direction of the anode lead wire is covered with solidified matter resulting from solidification of a melt, the anode terminal and the anode lead wire being bonded to each other by the solidified matter.

1 - 9 . (canceled)  
   
   
       10 . A method for preparing a chip type capacitor comprising a solid electrolytic capacitor element having an anode lead wire partially extending therefrom; said method using an anode terminal having a recess for resting the extending portion of the anode lead wire and at least one protrusion located beside the recess and above the level of the top of the extending portion of the anode lead wire when the extending portion is rested thereon, said method comprising: 
 resting the extending portion of the anode lead wire on the recess in such a manner that the anode lead wire is substantially perpendicular to the recess of the anode terminal;    melting the protrusion by a means for heating to form a melt;    allowing the melt to flow down by gravity to supply the melt to the upper surface portion of the extending portion of the anode lead wire; and    allowing the melt to solidify to bond the extending portion of the anode lead wire and the anode terminal to each other with the resulting solidified matter.    
   
   
       11 . The method for preparing a chip type capacitor according to  claim 10 , wherein the position in the top end surface of the protrusion at which the protrusion is melted by heating is a position apart from the recess-proximal end of the top end surface by about 2% to about 50% of the width of the top end surface in the direction substantially perpendicular to the extending direction of the anode lead wire.  
   
   
       12 . The method for preparing a chip type capacitor according to  claim 10 , wherein the melt is supplied to the upper surface portion of the anode lead wire while heating the upper surface portion of the anode lead wire by a means for heating.  
   
   
       13 . The method for preparing a chip type capacitor according to  claim 12 , wherein the means for heating the upper surface portion of the anode lead wire is the same heating means as for melting the protrusion.  
   
   
       14 . The method for preparing a chip type capacitor according to  claim 12 , wherein the temperature for heating the upper surface portion of the anode lead wire is the solidifying point of the material of the melt or higher and lower than the melting point of the material of the anode lead wire.  
   
   
       15 . The method for preparing a chip type capacitor according to  claim 10 , wherein the means for heating is irradiation with a laser beam.  
   
   
       16 . The method for preparing a chip type capacitor according to  claim 13 , wherein the means for heating the protrusion and the upper surface portion of the anode lead wire is irradiation with a laser beam.  
   
   
       17 . The method for preparing a chip type capacitor according to  claim 16 , wherein the protrusion and the upper surface potion of the anode lead wire are irradiated with a laser beam by scanning the laser beam.  
   
   
       18 - 19 . (canceled)