Semiconductor device and method of fabricating the same

Abstract

A semiconductor device comprises a semiconductor IC chip provided with electrode pads, and an insulating layer formed on a surface of the semiconductor IC chip, on the side of the electrode pads. Connecting terminals on the outer surface of the insulating layer and the electrode pads are connected by conductive posts. The insulating layer is formed of an insulating elastic material, and the conductive posts are formed of a conductive elastic material.

1 - 12 . (canceled)  
   
   
       13 . A semiconductor device fabricating method comprising the steps of: 
 preparing a wafer including a plurality of semiconductor IC chips provided with electrode pad; forming an insulating layer of an insulating elastic material on a surface of the wafer, on the side of the electrode pads of the semiconductor IC chips;    forming blind vias through the insulating layer;    forming conductive posts connected to the electrode pads by filling the blind vias with a conductive paste and curing the conductive paste in the blind vias;    providing connecting terminals connecting to the conductive posts; and    dicing the wafer for dividing the wafer into individual semiconductor devices.    
   
   
       14 . The semiconductor device fabricating method according to  claim 13  further comprising the step of forming a wiring layer on the semiconductor IC chips so as to be connected to the electrode pads; 
 wherein a metal layer is formed on the insulating layer of the insulating elastic material, the blind vias are formed through the insulating layer and the metal layer, and    a wiring part is formed from the metal layer so as to connect the conductive post and the connecting terminals.    
   
   
       15 . A semiconductor device fabricating method comprising the steps of: 
 preparing a wafer including a plurality of semiconductor IC chips provided with electrode pads; forming a layered structure consisting of an insulating layer of an insulating elastic material, an insulating protective layer and a metal layer on a surface of the wafer, on the side of the electrode pads of the semiconductor IC chips,    forming blind vias through the layered structure;    forming conductive posts connected to the electrode pads by filling the blind vias with a conductive paste and curing the conductive paste in the blind vias;    forming a wiring part connected to the conductive posts from the metal layer of the layered structure; providing connecting terminals connecting to the wiring part; and    dicing the wafer for dividing the wafer into individual semiconductor devices.    
   
   
       16 . The semiconductor device fabricating method according to  claim 13 , wherein 
 the conductive paste of the conductive posts is a conductive, elastic rubber.    
   
   
       17 . The semiconductor device fabricating method according to  claim 13 , wherein 
 the step of forming the wiring part connecting to the connecting terminals from the metal layer, includes the steps of:    forming a resist film provided with openings on the metal layer;    forming a Ni layer and a Au layer in that order or a Cu layer, a Ni layer and a Au layer in that order by plating in the openings and    removing the resist film and etching exposed parts of the metal layer.