Semiconductor device

Abstract

A semiconductor device includes first and second semiconductor elements, a first metal body attached to a first side of the semiconductor elements by a first solder portion, a second metal body attached to a second side of the semiconductor elements with a second solder portion, and a resin mold sealing the semiconductor elements, the first metal body and the second metal body by encapsulating them. In the semiconductor device having the second side as an element disposition surface, strain measurement caused by heat stress is maximum at the first solder portion among soldering portions of the semiconductor elements.

1 . A semiconductor device comprising: 
 a semiconductor element;    a first metal body attached to a first side of the semiconductor element by a first solder portion, wherein the first metal body serves as an electrode and a radiator;    a second metal body attached to a second side of the semiconductor element by a second solder portion, wherein the second metal body also serves as an electrode and a radiator, wherein the second side is opposite to the first side of the semiconductor element and serves as an element disposition surface; and    a resin mold sealing the semiconductor element, the first metal body and the second metal body by encapsulating them,    wherein the first solder portion has maximum strain measurement caused by heat stress, among the soldering portions of the semiconductor element.    
   
   
       2 . The semiconductor device of  claim 1 , 
 wherein the first solder portion covers an entire surface of the first side of the semiconductor element, and    wherein the second solder portion covers a part of the second side of the semiconductor element with a predetermined distance between an outer periphery of the second solder portion and an edge of the second side of the semiconductor element.    
   
   
       3 . The semiconductor device of  claim 1 , wherein the semiconductor element further comprises first and second semiconductor elements, wherein each of the first and second semiconductor elements has different planar sizes, wherein the semiconductor element having a larger planar size has a thinner thickness than the other semiconductor element.  
   
   
       4 . The semiconductor device of  claim 3 , wherein the semiconductor element of larger planar size is an IGBT element and the semiconductor element of smaller planar size is an FWD element.  
   
   
       5 . The semiconductor device of any one of claims  1 , wherein the first solder portion is thinner than the second solder portion.  
   
   
       6 . The semiconductor device of  claim 3 , wherein both of the first and second semiconductor elements of different thickness are disposed on the same plane between the first metal body and the second metal body opposed to the first metal body.  
   
   
       7 . The semiconductor device of  claim 6 , wherein a radiating surface of the first metal body and a radiating surface of the second metal body are exposed from the resin mold.  
   
   
       8 . The semiconductor device of  claim 6 , 
 wherein, for each of the first and second semiconductor elements, a different third metal body is disposed between the second solder portion on the semiconductor elements and the second metal body,    wherein each of the first and second semiconductor elements and the third metal bodies are attached by the second solder portion,    wherein each of the third metal bodies and the second metal body are attached by the third solder portions,    wherein each of the third metal bodies has a different thickness so that the radiating surface of the first metal body and the radiating surface of the second metal body are disposed in parallel.    
   
   
       9 . The semiconductor device of  claim 6 , 
 wherein a different third metal body is disposed between the second solder portions on the semiconductor elements and the second metal body for each of the semiconductor elements,    wherein each of the semiconductor elements and the third metal bodies are attached by the second solder portions,    wherein each of the third metal bodies and the second metal body are attached by the third solder portions,    wherein each of the third solder has a different thickness so that the radiating surface of the first metal body and the radiating surface of the second metal body are disposed in parallel.    
   
   
       10 . The semiconductor device of  claim 6 , 
 wherein the second metal body has a concave or convex portions on a side facing towards the semiconductor elements, and    wherein the concave or convex portions permit the radiating surface of the first metal body and the radiating surface of the second metal body in parallel.    
   
   
       11 . The semiconductor device of  claim 6 , wherein the first solder portion and the second solder portion include a metal powder for defining a height of the solder.  
   
   
       12 . The semiconductor device of  claim 6 , wherein the semiconductor element of relatively thin thickness is an IGBT element and the thicker semiconductor element is an IGBT element.