Semiconductor device in which occurence of slips is suppressed

Abstract

A substrate contains dissolved oxygen at a concentration of not more than 8×10 17 atoms/cm 3 and an impurity which is used as an acceptor or donor at a concentration of not more than 1×10 15 atoms/cm 3 . In the substrate, an oxygen precipitation layer used to suppress occurrence of a slip starting from the rear surface of the substrate is formed. On the substrate, a silicon layer in which circuit elements are formed and which contains dissolved oxygen with at concentration of not more than 8×10 17 atoms/cm 3 and an impurity which is used as an acceptor or donor at a concentration of not more than 1×10 15 atoms/cm 3 is formed.

1 . A semiconductor device comprising: 
 a substrate having an oxygen precipitation layer formed therein, the substrate containing dissolved oxygen at a concentration of not more than 8×10 17  atoms/cm 3  and an impurity which is used as an acceptor or donor at a concentration of not more than 1×10 15  atoms/cm 3 , and a silicon layer formed on the substrate and having circuit elements formed therein, the silicon layer containing dissolved oxygen at a concentration of not more than 8×10 17  atoms/cm 3  and an impurity which is used as an acceptor or donor at a concentration of not more than 1×10 15  atoms/cm 3 .    
   
   
       2 . A device according to  claim 1 , wherein the film thickness of the silicon layer is 1 μm to 10 μm.  
   
   
       3 . A device according to  claim 1 , wherein the film thickness of the silicon layer is not more than 4 μm.  
   
   
       4 . A device according to  claim 1 , wherein the silicon layer is an epitaxial layer.  
   
   
       5 . A device according to  claim 1 , wherein the circuit elements include an inductor formed in a region which is formed above the substrate and in which no well is formed.  
   
   
       6 - 22 . (canceled)