Capacitor structures

Abstract

The invention includes a method of forming a capacitor structure. A first electrical node is formed, and a layer of metallic aluminum is formed over the first electrical node. Subsequently, an entirety of the metallic aluminum within the layer is transformed into one or more of AlN, AlON, and AlO, with the transformed layer being a dielectric material over the first electrical node. A second electrical node is then formed over the dielectric material. The first electrical node, second electrical node and dielectric material together define at least a portion of the capacitor structure. The invention also pertains to a capacitor structure which includes a first electrical node, a second electrical node, and a dielectric material between the first and second electrical nodes. The dielectric material consists essentially of aluminum, oxygen and nitrogen.

1 - 34 . (canceled)  
     
     
         35 . A capacitor structure comprising a dielectric region between first and second capacitor electrodes, the dielectric region comprising: 
 a silicon-dioxide-comprising layer;    a first aluminum-comprising layer; and    a second aluminum-comprising layer, wherein the composition of the first and second aluminum-comprising layers are different from one another.    
     
     
         36 . The capacitor structure of  claim 35  wherein the first aluminum-comprising layer is over the silicon-dioxide-comprising layer.  
     
     
         37 . The capacitor structure of  claim 35  wherein the second aluminum-comprising layer is over the silicon-dioxide-comprising layer.  
     
     
         38 . The capacitor structure of  claim 35  wherein the first aluminum-comprising layer comprises aluminum nitride and the second aluminum-comprising layer comprises aluminum oxide.  
     
     
         39 . The capacitor structure of  claim 35  wherein the first capacitor electrode comprises conductively doped polycrystalline silicon.  
     
     
         40 . The capacitor structure of  claim 35  wherein the second capacitor electrode comprises silicon.