Substrate for electronic devices, manufacturing method therefor, and electronic device

Abstract

There is provided a substrate for electronic devices, in which treatment for forming a reconstructed surface or a hydrogen-terminated surface on a substrate is not necessary, and a buffer layer formed on the substrate can be epitaxially grown in the (100) orientation, and a manufacturing method therefor. The substrate 100 for electronic devices comprises; a substrate 11 consisting of silicon, and a first buffer layer 12 and a second buffer layer 13 having a fluorite structure, a first oxide electrode layer 14 having a layered perovskite structure, and a second oxide electrode layer 15 having a simple perovskite structure, which are epitaxially grown and laminated in this order on a film-forming surface of the substrate 11 . The first buffer layer 12 is grown epitaxially at a higher rate than the growth rate of SiO 2 , by irradiating a metallic plasma onto a natural oxide film in an SiO sublimation area.

1 . A substrate for electronic devices comprising: a substrate consisting of silicon and having a film-forming surface, and a first buffer layer, a second buffer layer, a first oxide electrode layer and a second oxide electrode layer, which are grown epitaxially and laminated in this order on the film-forming surface of the substrate, wherein 
 said first buffer layer is a first metal oxide having a fluorite structure,    said second buffer layer is a second metal oxide having a fluorite structure,    said first oxide electrode layer is a third metal oxide having a layered perovskite structure, and    said second oxide electrode layer is a fourth metal oxide having a simple perovskite structure.    
   
   
       2 . A substrate for electronic devices according to  claim 1 , wherein the orientation of said film-forming surface is (100), (110), or (111).  
   
   
       3 . A substrate for electronic devices according to  claim 1 , wherein in said film-forming surface, a diffraction pattern is not observed in a diffraction image by a RHEED method, before forming said first buffer layer.  
   
   
       4 . A substrate for electronic devices according to  claim 1 , wherein said first metal oxide is a solid solution expressed as Zr 1-x Mα x O y  (0<x<1, 1.5<y<2) obtained by substituting a part of Zr, being a constituent element of zirconia, by a metal element Mα, where Mα indicates one kind of element selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, Mg, Ca, Sr and Ba, and the first metal oxide is cubically oriented in the (100) direction.  
   
   
       5 . A substrate for electronic devices according to  claim 1 , wherein said second metal oxide is cerium oxide or a solid solution expressed as Ce 1-x Mβ x O y  (0<x<1, 1.5<y<2) obtained by substituting a part of Ce, being a constituent element of cerium oxide, by a metal element Mβ, where Mβ indicates one kind of element selected from Zr, La, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, Y, Mg, Ca, Sr and Ba, and the second metal oxide is cubically oriented in the (100) direction.  
   
   
       6 . A substrate for electronic devices according to  claim 1 , wherein said third metal oxide is a solid solution containing a metal element My or RE as a constituent element, and expressed as MγRuO 4 , RE 2 NiO 4 , or REBa 2 Cu 3 O x , where Mγ indicates one kind of element selected from Ca, Sr and Ba, and RE indicates one kind of element selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and Y, and the third metal oxide is tetragonally or orthorhombically oriented in the (001) direction.  
   
   
       7 . A substrate for electronic devices according to  claim 1 , wherein said fourth metal oxide is a solid solution containing a metal element Mγ or RE as a constituent element, and expressed as MγRuO 3 , (RE, Mγ)CrO 3 , (RE, Mγ)MnO 3 , (RE, Mγ)CoO 3 , or (RE, Mγ)NiO 3 , where Mγ indicates one kind of element selected from Ca, Sr and Ba, and RE indicates one kind of element selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and Y, and the third metal oxide is cubically or pseudo-cubically oriented in the (100) direction.