Semiconductor device

Abstract

A semiconductor device includes a semiconductor substrate, a channel layer, a Schottky layer, a first layer having a narrower band gap than the Schottky layer, a second layer having band discontinuity with the Schottky layer, a gate electrode, an n+ layer, a source electrode, and a drain electrode. The first and second layers are within the Schottky layer, and the second layer is disposed on the first layer.

1 - 5 . (canceled)  
   
   
       6 . A semiconductor device comprising: 
 a channel layer on a semiconductor substrate;    a Schottky layer on the channel layer;    a gate electrode disposed on the Schottky layer;    a compound semiconductor layer containing phosphorus and covering the Schottky layer;    first and second n+ layers on the compound semiconductor layer containing phosphorus, on opposite sides of the gate electrode;    a source electrode on the first n+ layer; and    a drain electrode on the second n+ layer.    
   
   
       7 . The semiconductor device according to  claim 6 , further comprising: 
 a first pair of first and second compound semiconductor layers containing phosphorus sandwiching the first n+ layer; and    a second pair of first and second compound semiconductor layers containing phosphorus and sandwiching the second n+ layer.    
   
   
       8 . The semiconductor device according to  claim 6 , further comprising: 
 a first pair of first and second compound semiconductor layers containing phosphorus sandwiched between the first n+ layer and the Schottky layer;    a first n− layer sandwiched between the first pair of first and second compound semiconductor layers containing phosphorus.    a second pair of first and second compound semiconductor layers containing phosphorus sandwiched between the second n+ layer and the Schottky layer; and    a second n− layer sandwiched between the second pair of first and second compound semiconductor layers containing phosphorus.    
   
   
       9 . The semiconductor device according to  claim 6 , wherein the compound semiconductor layer containing phosphorus is InGaP.  
   
   
       10 . (canceled)