Semiconductor radiation detector, positron emission tomography apparatus, semiconductor radiation detection apparatus, detector unit and nuclear medicine diagnostic apparatus

Abstract

Each semiconductor radiation detector used for a nuclear medicine diagnostic apparatus (PET apparatus) is constructed with an anode electrode A facing a cathode electrode C sandwiching a CdTe semiconductor member S which generates charge through interaction with γ-rays. Then, a thickness t of the semiconductor member S sandwiched between these mutually facing anode electrode A and cathode electrode C is set to 0.2 to 2 mm. Furthermore, the devices are mounted (laid out) on substrates in such a way that the distance (distance of conductor) between the semiconductor radiation detector and an analog ASIC which processes the signal detected by this detector is shortened. Furthermore, the substrates on which the detectors are mounted are housed in a housing as a unit (detector unit).

1 . (canceled)  
   
   
       2 . The semiconductor radiation detector according to  claim 3 , wherein said distance between the electrodes or the thickness of said semiconductor area is 0.5 to 1.5 mm.  
   
   
       3 . A semiconductor radiation detector, comprising: 
 a semiconductor area where electric charge is generated through interaction with radiation; and    an anode electrode and a cathode electrode being arranged opposed to each other sandwiching said semiconductor area,    wherein distance between said anode electrode and cathode electrode or thickness of said semiconductor area sandwiched between said anode electrode and cathode electrode is 0.2 to 2 mm, and area of said electrodes or area of semiconductor plane forming said electrodes is 4 to 120 mm 2 .    
   
   
       4 . (canceled)  
   
   
       5 . The nuclear medicine diagnostic apparatus according to  claim 6 , wherein said distance between the electrodes or the thickness of said semiconductor area is 0.5 to 1.5 mm.  
   
   
       6 . A positron emission tomography apparatus comprising: 
 a plurality of semiconductor areas where electric charge is generated through interaction with radiation;    a plurality of semiconductor radiation detectors including anode electrodes and cathode electrodes opposed to each other sandwiching said semiconductor areas;    a plurality of signal processing apparatuses provided for each of said plurality of semiconductor radiation detectors, radiation detection signals from corresponding semiconductor radiation detectors being input to said plurality of signal processing apparatuses;    a counting apparatus to which outputs from said plurality of signal processing apparatuses are input, the counting apparatus counts in pairs said outputs corresponding to a pair of said radiation detection signals detected within a set time; and    a tomographic information creation apparatus which creates tomographic information using counting information output from said counting apparatus,    wherein distance between a pair of said anode electrode and cathode electrode or thickness of each of said semiconductor areas of said semiconductor radiation detectors sandwiched between said anode electrode and cathode electrode is 0.2 to 2 mm, and area of said electrodes or area of a semiconductor plane forming said electrodes is 4 to 120 mm 2 .    
   
   
       7 - 8 . (canceled)  
   
   
       9 . The nuclear medicine diagnostic apparatus according to  claim 58 , wherein said integrated circuit further comprising: 
 an analog integrated circuit which processes signals output from said semiconductor radiation detectors;    an AD converter which converts an analog signal which is the output of said analog integrated circuit to a digital signal; and    a digital integrated circuit which processes the AD-converted signal.    
   
   
       10 . (canceled)  
   
   
       11 . The nuclear medicine diagnostic apparatus according to  claim 9 , wherein said analog integrated circuit is provided with a function of amplifying signals and said digital integrated circuit is provided with a function of deciding radiation detection times.  
   
   
       12 . The nuclear medicine diagnostic apparatus according to  claim 58 , wherein said unit substrate comprises a first substrate and a second substrate, 
 said first substrate comprises said semiconductor radiation detectors, and    said second substrate comprises said integrated circuit.    
   
   
       13 - 14 . (canceled)  
   
   
       15 . The nuclear medicine diagnostic apparatus according  claim 12 , wherein said first substrate and said second substrate are connected in a mutually detachable/attachable manner.  
   
   
       16 . (canceled)  
   
   
       17 . The nuclear medicine diagnostic apparatus according to  claim 12 , wherein said first substrate and said second substrate are connected in such a way that ends of both substrates are overlapped with each other.  
   
   
       18 . The nuclear medicine diagnostic apparatus according to  claim 58 , wherein said semiconductor radiation detectors are arranged on both sides of said unit substrate.  
   
   
       19 . The nuclear medicine diagnostic apparatus according to  claim 12 , wherein said semiconductor radiation detectors are arranged on both sides of said first substrate.  
   
   
       20 . The nuclear medicine diagnostic apparatus according to  claim 58 , further comprising a body of rotation and a bed on which an examinee is laid, 
 wherein said plurality of unit substrates are mounted on a support member provided in said body of rotation so as to revolve around said bed,    said semiconductor radiation detectors of said unit substrate are arranged on said bed side, and said support member is provided with a collimator having a plurality of radiation passages opposed to said semiconductor radiation detectors and disposed closer to said bed than said semiconductor radiation detectors.    
   
   
       21 - 55 . (canceled)  
   
   
       56 . The semiconductor radiation detector according to  claim 3 , wherein said semiconductor radiation detectors have a structure in which said plurality of semiconductor areas are arranged in parallel in a manner that said anode electrodes and said cathode electrodes are alternately sandwiched between said semiconductor areas.  
   
   
       57 . The positron emission tomography apparatus according to  claim 6 , wherein said semiconductor radiation detectors have a structure in which said plurality of semiconductor areas are arranged in parallel in a manner that said anode electrodes and said cathode electrodes are alternately sandwiched between said semiconductor areas.  
   
   
       58 . A nuclear medicine diagnostic apparatus, comprising: 
 a plurality of semiconductor radiation detectors to which radiation is input;    an integrated circuit for processing radiation detection signals output from each of said plurality of semiconductor radiation detectors; and    a plurality of unit substrates including said plurality of semiconductor radiation detectors and said integrated circuit,    wherein said semiconductor radiation detectors have a semiconductor area where electric charge is generated through interaction with radiation, and a pair of said anode electrode and cathode electrode are arranged opposed to each other so as to sandwich said semiconductor area, and distance between said anode electrode and cathode electrode or thickness of said semiconductor area sandwiched between said anode electrode and cathode electrode is 0.2 to 2 mm.    
   
   
       59 . The nuclear medicine diagnostic apparatus according to  claim 58 , further comprising a tomographic information creation apparatus for creating tomographic information using second information obtained from first information output from said integrated circuit.  
   
   
       60 . A nuclear medicine diagnostic apparatus, comprising: 
 a plurality of semiconductor radiation detectors to which radiation is input;    an integrated circuit for processing radiation detection signals output from each of said plurality of semiconductor radiation detectors;    a counting apparatus to which outputs from said integrated circuit are input, the counting apparatus counts in pairs said outputs corresponding to a pair of said radiation detection signals detected within a set time; and    a tomographic information creation apparatus which creates tomographic information using counting information output from said counting apparatus,    wherein said plurality of semiconductor radiation detectors and said integrated circuit are included in a plurality of unit substrates, said semiconductor radiation detectors have a semiconductor area where electric charge is generated through interaction with radiation, and an anode electrode and a cathode electrode are arranged opposed to each other so as to sandwich said semiconductor area, and distance between said anode electrode and cathode electrode or thickness of said semiconductor area sandwiched between said anode electrode and cathode electrode is 0.2 to 2 mm.    
   
   
       61 . The nuclear medicine diagnostic apparatus according to  claim 58 , wherein said distance between said anode electrode and cathode electrode or thickness of said semiconductor area sandwiched between said anode electrode and cathode electrode is 0.5 to 1.5 mm.  
   
   
       62 . The nuclear medicine diagnostic apparatus according to  claim 58 , wherein an area of one of said electrodes or an area of a semiconductor plane forming one of said electrodes is 4 to 120 mm 2 .  
   
   
       63 . The nuclear medicine diagnostic apparatus according to  claim 58 , further comprising a bed for supporting an object to be examined, 
 wherein said plurality of unit substrates are arranged around said bed, and said semiconductor radiation detectors of said unit substrates are arranged at a portion near said bed.