Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece

Abstract

A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

1 - 100 . (canceled)  
     
     
         101 . A method for electrolytically processing a microelectronic workpiece having a seed layer, comprising: 
 determining a set of control parameters based on physical properties of the seed layer;    contacting the seed layer on the microelectronic workpiece with an electrolytic fluid in a processing chamber;    delivering a plurality of electrical currents through a corresponding plurality of electrodes in the processing chamber; and    operating the processing chamber according to the determined set of control parameters to change the physical properties and form a finished seed layer.    
     
     
         102 . The method of  claim 101 , further comprising measuring the physical properties of the seed layer and determining the set of control parameters from the measured physical properties.  
     
     
         103 . The method of  claim 101 , wherein the control parameters comprise the plurality of electrical currents delivered through the electrodes.  
     
     
         104 . The method of  claim 101  wherein operating the processing chamber according to the set of control parameters comprises delivering the electrical currents through first and second electrodes in the processing chamber to yield a finished seed layer with a desired thickness profile.  
     
     
         105 . The method of  claim 101  wherein operating the processing chamber according to the set of control parameters comprises delivering the electrical currents through first and second electrodes in the processing chamber to yield a finished seed layer with at least a substantially flat thickness profile across the workpiece.  
     
     
         106 . The method of  claim 101  wherein operating the processing chamber according to the set of control parameters comprises delivering the electrical currents through first and second electrodes in the processing chamber to yield a finished seed layer with a convex thickness profile.  
     
     
         107 . The method of  claim 101  wherein after operating the processing chamber according to the set of control parameters to form the finished seed layer, the method further comprises measuring the physical properties of the finished seed layer and revising the control parameters for enhancing seed layers of subsequent workpieces processed using the processing chamber.  
     
     
         108 . A method for electrolytically processing a microelectronic workpiece having a seed layer, comprising: 
 contacting the seed layer on the workpiece with an electrolytic fluid in a processing chamber; and    delivering a plurality of electrical currents to the electrolytic fluid via a corresponding plurality of electrodes in the processing chamber to deposit material onto the seed layer in a manner that forms a finished seed layer with a desired thickness profile for subsequent plating.    
     
     
         109 . The method of  claim 108 , further comprising measuring physical properties of the seed layer and determining the electrical currents from the measured physical properties.  
     
     
         110 . The method of  claim 108  wherein the electrical currents are delivered through the electrodes to yield a finished seed layer with at least a substantially flat thickness profile across the workpiece.  
     
     
         111 . The method of  claim 108  wherein the electrical currents are delivered through the electrodes to yield a finished seed layer with a convex thickness profile.  
     
     
         112 . The method of  claim 108  wherein after forming the finished seed layer, the method further comprises measuring the physical properties of the finished seed layer and revising the plurality of electrical currents delivered through the electrodes for enhancing seed layers of subsequent workpieces processed using the processing chamber.  
     
     
         113 . A method for electrolytically processing a microelectronic workpiece having an initial seed layer, comprising: 
 contacting the initial seed layer with an electrolytic fluid in a processing chamber;    delivering a plurality of electrical currents through a corresponding plurality of electrodes located in the processing chamber to form a finished seed layer having an improved thickness uniformity compared to the initial seed layer; and    delivering a plurality of different electrical currents through the corresponding plurality of electrodes to plate additional material onto the finished seed layer.    
     
     
         114 . The method of  claim 113 , further comprising measuring physical properties of the initial seed layer and determining the electrical currents from the measured physical properties.  
     
     
         115 . The method of  claim 113  wherein the electrical currents are delivered through the electrodes such that the finished seed layer has at least a substantially flat thickness profile across the workpiece.  
     
     
         116 . The method of  claim 113  wherein the electrical currents are delivered through the electrodes such that the finished seed layer has a convex thickness profile.  
     
     
         117 . The method of  claim 113  wherein after forming the finished seed layer, the method further comprises measuring the physical properties of the finished seed layer and revising the plurality of electrical currents delivered through the electrodes for enhancing seed layers of subsequent workpieces processed using the processing chamber.  
     
     
         118 . The method of  claim 113  wherein delivering a plurality of different electrical currents through the corresponding plurality of electrodes to plate additional material onto the finished seed layer comprises delivering a set of plating currents in a manner that produces a profiled layer on the workpiece.  
     
     
         119 . The method of  claim 118  wherein the profiled layer has at least a substantially flat surface.  
     
     
         120 . The method of  claim 118  wherein the profiled layer has a convex surface that is thicker at a central portion of the workpiece than at a perimeter portion of the workpiece.