Method of conditioning polishing pad for semiconductor wafer

Abstract

Dressing is performed by spraying a cleaning liquid onto a polishing pad and after that abrasive slurry injected from a nozzle is supplied to the polishing pad. Provided is a method of conditioning a polishing pad for semiconductor wafer which is suitable for keeping the polishing performance of a polishing pad, provided with a polishing device for semiconductor wafer, in a stable condition for a long time.

1 . A method of conditioning a polishing pad for semiconductor wafer, comprising: 
 dressing by spraying a cleaning liquid onto a polishing pad; and then    supplying abrasive slurry injected from a nozzle to the polishing pad.    
   
   
       2 . A method of conditioning a polishing pad for semiconductor wafer, comprising: 
 dressing by causing relative movements while a polishing pad is being pressed against a dresser; and then    supplying abrasive slurry injected from a nozzle to the polishing pad.    
   
   
       3 . A method of conditioning a polishing pad for semiconductor wafer, comprising: 
 dressing by spray of a cleaning liquid onto a polishing pad; and then    supplying abrasive slurry to the polishing pad by adding dropwise.    
   
   
       4 . A method of conditioning a polishing pad for semiconductor wafer, comprising: 
 dressing by causing relative movements while a polishing pad is being pressed against a dresser; and then    supplying abrasive slurry to the polishing pad by being added dropwise.    
   
   
       5 . A method of conditioning a polishing pad for semiconductor wafer, comprising: 
 dressing by spraying a cleaning liquid onto a polishing pad; and then    supplying abrasive slurry which does not contain abrasive grains to the polishing pad.    
   
   
       6 . A method of conditioning a polishing pad for semiconductor wafer, comprising: 
 dressing by causing relative movements while a polishing pad is being pressed against a dresser; and then    supplying abrasive slurry which does not contain abrasive grains to the polishing pad.    
   
   
       7 . The method of conditioning a polishing pad according to  claim 5 , wherein the abrasive slurry which does not contain abrasive grains is supplied by being injected from a nozzle.  
   
   
       8 . The method of conditioning a polishing pad according to  claim 6 , wherein the abrasive slurry which does not contain abrasive grains is supplied by adding dropwise.  
   
   
       9 . A method of conditioning a polishing pad for semiconductor wafer, comprising: 
 dressing by spraying a cleaning liquid onto a polishing pad; and then    supplying a pH-adjusting liquid to the polishing pad.    
   
   
       10 . A method of conditioning a polishing pad for semiconductor wafer, comprising: 
 dressing by causing relative movements while the polishing pad is being pressed against the dresser; and then    supplying a pH-adjusting liquid to the polishing pad.    
   
   
       11 . The method of conditioning a polishing pad according to  claim 9 , wherein the pH-adjusting liquid is supplied by being injected the pH-adjusting liquid from a nozzle.  
   
   
       12 . The method of conditioning a polishing pad according to  claim 10 , wherein the pH-adjusting liquid is supplied by being added dropwise.  
   
   
       13 . The method of conditioning a polishing pad according to  claim 1 , wherein the cleaning liquid is pure water.  
   
   
       14 . The method of conditioning a polishing pad according to  claim 1 , wherein the cleaning liquid is a pH-adjusting liquid.  
   
   
       15 . The method of conditioning a polishing pad according to  claim 1 , wherein the cleaning liquid is abrasive slurry which does not contain abrasive grains.  
   
   
       16 . A method of conditioning a polishing pad for semiconductor wafer, comprising dressing by spraying abrasive slurry onto a polishing pad.  
   
   
       17 . A method of conditioning a polishing pad for semiconductor wafer, comprising spraying a pH-adjusting liquid onto a polishing pad.  
   
   
       18 . A method of conditioning a polishing pad for semiconductor wafer, comprising spraying abrasive slurry which does not contain abrasive grains onto a polishing pad.  
   
   
       19 . The method of conditioning a polishing pad for semiconductor wafer according to  claim 1 , wherein polishing uses a dummy work after conditioning a polishing pad for semiconductor wafer by the method of  claim 1 .  
   
   
       20 . The method of conditioning a polishing pad for semiconductor wafer, comprising: 
 dressing by spray of pure water onto a polishing pad; and then    polishing using a dummy work.