Pivotable slurry arm

Abstract

Embodiments of methods and apparatus of the present invention provide a chemical mechanical planarization (CMP) apparatus including a pivotable slurry arm for dispensing slurry.

1 . A chemical mechanical planarization apparatus, comprising: 
 a polishing pad platen adapted to hold and rotate a polishing pad; and    a slurry arm extending at least a radial distance over the polishing pad platen, the slurry arm adaptable to pivot over a pivoting axis, and having a nozzle including two or more slurry ports, and the slurry arm adapted to allow simultaneous deposition through the two or more slurry ports of either two or more streams of one slurry solution at two or more different flow rates, or two or more different slurry solutions onto the polishing pad.    
   
   
       2 . The apparatus of  claim 1 , wherein the slurry arm is adapted to pivot about a point adjacent the polishing pad platen.  
   
   
       3 . The apparatus of  claim 1 , wherein the slurry arm is adapted to allow positioning of the nozzle at locations over the polishing pad surface along at least an arc across the polishing pad spanning from one perimeter edge to another perimeter edge of the polishing pad platen.  
   
   
       4 . The apparatus of  claim 1 , wherein the slurry arm is further adapted to allow deposition through the two or more slurry ports, different concentrations of the two or more different slurry solutions.  
   
   
       5 . The apparatus of  claim 1 , wherein the two or more different slurry solutions comprise at least a selected one of a chemical etchant slurry solution and an abrasive slurry solution.  
   
   
       6 . The apparatus of  claim 1 , wherein the slurry arm comprises a length adapted to allow positioning of the nozzle at locations over the polishing pad surface.  
   
   
       7 . The apparatus of  claim 1 , wherein the slurry arm is controllable to concentrate either the slurry solution or the two or more slurry solutions on a target area of the polishing pad.  
   
   
       8 . A method for substrate surface planarization, comprising: 
 holding and rotating a polishing pad;    holding and rotating a substrate complementary to the rotating polishing pad;    extending a slurry arm at least a radial distance over the polishing pads generating a slurry film from simultaneous deposition of either two or more streams of one slurry solution at two or more different flow rates, or two or more different slurry solutions; and    pivoting the arm about a pivoting axis to deposit the slurry film onto the polishing pad.    
   
   
       9 . The method of  claim 8 , further comprising adjusting a rotational velocity of the pivoting of the slurry arm to maintain a uniformity of the slurry film being deposited.  
   
   
       10 . The method of  claim 9 , wherein said adjusting comprises adjusting the rotational velocity of the slurry arm with respect to a rotational velocity of the polishing pad.  
   
   
       11 . The method of  claim 10 , wherein said adjusting further comprises adjusting the rotational velocity of the slurry arm with respect an anticipated radial position of the substrate.  
   
   
       12 . The method of  claim 9 , wherein said adjusting comprises adjusting the rotational velocity of the slurry arm with respect an anticipated radial position of the substrate.  
   
   
       13 . The method of  claim 8 , further comprising controlling the slurry arm to deposit through the two or more ports, different concentrations of the two or more different slurry solutions.  
   
   
       14 . A chemical mechanical planarization (CMP) system, comprising: 
 a CMP arrangement having    a polishing pad platen adapted to hold and rotate a polishing pad, and    a slurry arm extending at least a radial distance over the polishing pad platen, the slurry arm being pivotable about a pivot axis, and having at least a nozzle including two or more slurry ports and the slurry arm adapted to allow simultaneous deposition through the two or more slurry ports of either two or more streams of one slurry solution at two or more different flow rates, or two or more different slurry solutions onto the polishing pad; and    a control system coupled to the slurry arm, and adapted to control the slurry arm to pivot about the pivot axis and position the nozzle over the polishing pad, the control system in communication with a substrate holder adapted to hold a substrate to be planarized by the polishing pad, for coordinated engagement with the polishing pad in view of the substrate holder.    
   
   
       15 . The system of  claim 14 , wherein the control system is adapted to control the slurry arm to pivot about a point adjacent the polishing pad platen.  
   
   
       16 . The system of  claim 14 , wherein the control system is adapted to control the two or more flow rates of the one different slurry solution by controlling the two or more slurry ports.  
   
   
       17 . The system of  claim 14 , wherein the control system is adapted to control the slurry arm to allow deposition through the two or more slurry ports of the nozzle to provide the two or more different slurry ports, different concentrations of the two or more different slurry solutions.  
   
   
       18 . The system of  claim 14 , wherein the control system is adapted to control the slurry arm to concentrate either the slurry solution or the two or more slurry solutions on a target area of the polishing pad.