US2005164592A1PendingUtilityA1

Manufacturing method and structure of copper lines for a liquid crystal panel

Assignee: CHUNGWHA PICTURE TUBES LTDPriority: May 29, 2003Filed: Mar 21, 2005Published: Jul 28, 2005
Est. expiryMay 29, 2023(expired)· nominal 20-yr term from priority
Inventors:Yu-Chou Lee
H10W 20/056G02F 1/136286
40
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Claims

Abstract

In those conventional arts, for large-size LCD, the process of copper damascene interconnect has some problems of forming a uneven copper seed layer and forming hollows during electrical plating due to the electrical plating area being too large to electroplate uniformly. In this invention, it employs a Cu tape to directly stick on a substrate to replace forming a copper seed layer and electroplating. Hence, the invention avoids the problem of unevenness and hollows in those conventional arts and so the Cu lines can be applied to the large-size LCD.

Claims

exact text as granted — not AI-modified
1 - 15 . (canceled)  
   
   
       16 . A structure of Cu lines in a liquid crystal panel, comprising: 
 a substrate having a plurality trenches on a surface of said substrate;    a plurality of Cu lines formed by sticking a Cu slice on said surface of said substrate and performing a chemical mechanical polishing to remove a portion of said Cu slice outside of said plurality of trenches.    
   
   
       17 . The structure according to  claim 16 , wherein said substrate is a glass substrate.  
   
   
       18 . The structure according to  claim 16 , wherein said substrate is a SiN x  substrate.  
   
   
       19 . The structure according to  claim 16 , wherein said trenches are etched with a wet etching.  
   
   
       20 . The structure according to  claim 16 , wherein said trenches are formed in a nondisplay region of an edge of said liquid crystal panel.  
   
   
       21 . The structure according to  claim 16 , wherein said Cu slice is struck on said substrate with heating.  
   
   
       22 . The structure according to  claim 16 , wherein said Cu slice is struck on said substrate with pressurizing.  
   
   
       23 . The structure according to  claim 16 , wherein said structure further comprises a buffer layer formed between said trenches, said substrate and said Cu slice.

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