US2005164592A1PendingUtilityA1
Manufacturing method and structure of copper lines for a liquid crystal panel
Assignee: CHUNGWHA PICTURE TUBES LTDPriority: May 29, 2003Filed: Mar 21, 2005Published: Jul 28, 2005
Est. expiryMay 29, 2023(expired)· nominal 20-yr term from priority
Inventors:Yu-Chou Lee
H10W 20/056G02F 1/136286
40
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Claims
Abstract
In those conventional arts, for large-size LCD, the process of copper damascene interconnect has some problems of forming a uneven copper seed layer and forming hollows during electrical plating due to the electrical plating area being too large to electroplate uniformly. In this invention, it employs a Cu tape to directly stick on a substrate to replace forming a copper seed layer and electroplating. Hence, the invention avoids the problem of unevenness and hollows in those conventional arts and so the Cu lines can be applied to the large-size LCD.
Claims
exact text as granted — not AI-modified1 - 15 . (canceled)
16 . A structure of Cu lines in a liquid crystal panel, comprising:
a substrate having a plurality trenches on a surface of said substrate; a plurality of Cu lines formed by sticking a Cu slice on said surface of said substrate and performing a chemical mechanical polishing to remove a portion of said Cu slice outside of said plurality of trenches.
17 . The structure according to claim 16 , wherein said substrate is a glass substrate.
18 . The structure according to claim 16 , wherein said substrate is a SiN x substrate.
19 . The structure according to claim 16 , wherein said trenches are etched with a wet etching.
20 . The structure according to claim 16 , wherein said trenches are formed in a nondisplay region of an edge of said liquid crystal panel.
21 . The structure according to claim 16 , wherein said Cu slice is struck on said substrate with heating.
22 . The structure according to claim 16 , wherein said Cu slice is struck on said substrate with pressurizing.
23 . The structure according to claim 16 , wherein said structure further comprises a buffer layer formed between said trenches, said substrate and said Cu slice.Join the waitlist — get patent alerts
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