Method of manufacturing semiconductor device

Abstract

Disclosed is a method of manufacturing a semiconductor device. The method comprises the steps of: preparing a silicon substrate having a predetermined lower structure including a gate and a bonding area; forming an interlayer dielectric film on the top side of the substrate; forming a photosensitive film pattern, which exposes an area for providing contact, on the interlayer dielectric film; forming a contact hole exposing a bonding area of the substrate by etching the exposed part of the interlayer dielectric film; removing the photosensitive film pattern; performing a dry cleaning on the exposed bonding area of the substrate so that CF based polymer formed in the etching step is removed; and performing a nitrogen-hydrogen plasma processing on the surface of the exposed bonding area of the substrate so that oxygen polymer and remaining CF-based polymer are removed. Therefore, since hydrogen plasma processing is performed after contact etching, ohmic contact characteristics can be secured. In addition, since the hydrogen plasma processing is performed using a conventional photosensitive film strip apparatus, cost required to install and maintain an additional apparatus is not generated.

1 . A method of manufacturing a semiconductor device, the method comprising the steps of: 
 preparing a silicon substrate having a predetermined lower structure including a gate and a bonding area;    forming an interlayer dielectric film on the top side of the substrate;    forming a photosensitive film pattern, which exposes an area for providing contact, on the interlayer dielectric film;    forming a contact hole exposing a bonding area of the substrate by etching the exposed part of the interlayer dielectric film; and    performing a hydrogen-oxygen-nitrogen plasma processing on the resultant substrate in a photosensitive film strip apparatus so that the photosensitive film pattern is removed and also CF based polymer is removed, the CF based polymer being formed on the surface of the exposed bonding area of the substrate during the etching step.    
   
   
       2 . A method of manufacturing a semiconductor device as claimed in  claim 1 , wherein the hydrogen-oxygen-nitrogen plasma processing is performed .using any one mixed gas from among a mixed gas of H 2 +O 2 +N 2  or a mixed gas of H 2 +O 2 +NF 3 .  
   
   
       3 . A method of manufacturing a semiconductor device as claimed in  claim 2 , wherein each flow of the H 2  gas, O 2  gas, N 2  gas, and NF 3  gas consists of 10˜200 sccm, 10˜1000 sccm, 10˜100 sccm, and 10˜100 sccm, respectively.  
   
   
       4 . A method of manufacturing a semiconductor device as claimed in  claim 1 , wherein the hydrogen-oxygen-nitrogen plasma processing is performed at a temperature range of room temperature ˜900° C. in a pressure range of 2˜1000 mTorr.