Chemically amplified resist and pattern formation method

Abstract

A resist film made of a chemically amplified resist including a water-soluble polymer is formed on a substrate, whereas the water-soluble polymer has lower gas permeability than the chemically amplified resist. Subsequently, pattern exposure is carried out by selectively irradiating the resist film with exposing light through a mask, and thereafter, the resultant resist film is developed. Thus, a fine resist pattern made of the resist film is formed in a good shape.

1 . A chemically amplified resist comprising a water-soluble polymer having lower gas permeability than said chemically amplified resist excluding said water-soluble polymer.  
     
     
         2 . The chemically amplified resist of  claim 1 , 
 wherein said water-soluble polymer is at least one of polyacrylic acid, polystyrenesulfonic acid, hydroxyethyl cellulose, polyisoprenesulfonic acid, polyvinyl pyrrolidone and pullulan.    
     
     
         3 . A pattern formation method comprising the steps of: 
 forming, on a substrate, a resist film made of a chemically amplified resist including a water-soluble polymer;    performing pattern exposure by selectively irradiating said resist film with exposing light; and    forming a resist pattern made of said resist film by developing said resist film after the pattern exposure,    wherein said water-soluble film has lower gas permeability than said chemically amplified resist excluding said water-soluble polymer.    
     
     
         4 . A pattern formation method comprising the steps of: 
 forming, on a substrate, a resist film made of a chemically amplified resist;    forming, on said resist film, a water-soluble film containing a water-soluble polymer having lower gas permeability than said chemically amplified resist;    performing pattern exposure by selectively irradiating said resist film with exposing light through said water-soluble film; and    forming a resist pattern made of said resist film by developing said resist film after removing said water-soluble film after the pattern exposure.    
     
     
         5 . A pattern formation method comprising the steps of: 
 forming, on a substrate, a resist film made of a chemically amplified resist;    forming, on said resist film, a water-soluble film containing a water-soluble polymer having lower gas permeability than said chemically amplified resist;    performing pattern exposure by selectively irradiating said resist film with exposing light through said water-soluble film; and    removing said water-soluble film and forming a resist pattern made of said resist film by developing said resist film after the pattern exposure.    
     
     
         6 . A pattern formation method comprising the steps of: 
 forming, on a substrate, a resist film made of a chemically amplified resist including a water-soluble polymer;    performing pattern exposure by selectively irradiating said resist film with exposing light with a liquid provided on said resist film; and    forming a resist pattern made of said resist film by developing said resist film after the pattern exposure,    wherein said water-soluble polymer has lower gas permeability than said chemically amplified resist excluding said water-soluble polymer.    
     
     
         7 . A pattern formation method comprising the steps of: 
 forming, on a substrate, a resist film made of a chemically amplified resist;    forming, on said resist film, a water-soluble film containing a water-soluble polymer having lower gas permeability than said chemically amplified resist;    performing pattern exposure by selectively irradiating said resist film with exposing light through said water-soluble film with a liquid provided on said water-soluble film; and    forming a resist pattern made of said resist film by developing said resist film after removing said water-soluble film after the pattern exposure.    
     
     
         8 . A pattern formation method comprising the steps of: 
 forming, on a substrate, a resist film made of a chemically amplified resist;    forming, on said resist film, a water-soluble film containing a water-soluble polymer having lower gas permeability than said chemically amplified resist;    performing pattern exposure by selectively irradiating said resist film with exposing light through said water-soluble film with a liquid provided on said water-soluble film; and    removing said water-soluble film and forming a resist pattern made of said resist film by developing said resist film after the pattern exposure.    
     
     
         9 . The pattern formation method of  claim 4 , 
 wherein said chemically amplified resist includes a water-soluble polymer having lower gas permeability than said chemically amplified resist excluding said water-soluble polymer.    
     
     
         10 . The pattern formation method of  claim 5 , 
 wherein said chemically amplified resist includes a water-soluble polymer having lower gas permeability than said chemically amplified resist excluding said water-soluble polymer.    
     
     
         11 . The pattern formation method of  claim 7 , 
 wherein said chemically amplified resist includes a water-soluble polymer having lower gas permeability than said chemically amplified resist excluding said water-soluble polymer.    
     
     
         12 . The pattern formation method of  claim 8 , 
 wherein said chemically amplified resist includes a water-soluble polymer having lower gas permeability than said chemically amplified resist excluding said water-soluble polymer.    
     
     
         13 . The pattern formation method of  claim 3 , 
 wherein said water-soluble polymer is at least one of polyacrylic acid, polystyrenesulfonic acid, hydroxyethyl cellulose, polyisoprenesulfonic acid, polyvinyl pyrrolidone and pullulan.    
     
     
         14 . The pattern formation method of  claim 4 , 
 wherein said water-soluble polymer is at least one of polyacrylic acid, polystyrenesulfonic acid, hydroxyethyl cellulose, polyisoprenesulfonic acid, polyvinyl pyrrolidone and pullulan.    
     
     
         15 . The pattern formation method of  claim 5 , 
 wherein said water-soluble polymer is at least one of polyacrylic acid, polystyrenesulfonic acid, hydroxyethyl cellulose, polyisoprenesulfonic acid, polyvinyl pyrrolidone and pullulan.    
     
     
         16 . The pattern formation method of  claim 6 , 
 wherein said water-soluble polymer is at least one of polyacrylic acid, polystyrenesulfonic acid, hydroxyethyl cellulose, polyisoprenesulfonic acid, polyvinyl pyrrolidone and pullulan.    
     
     
         17 . The pattern formation method of  claim 7 , 
 wherein said water-soluble polymer is at least one of polyacrylic acid, polystyrenesulfonic acid, hydroxyethyl cellulose, polyisoprenesulfonic acid, polyvinyl pyrrolidone and pullulan.    
     
     
         18 . The pattern formation method of  claim 8 , 
 wherein said water-soluble polymer is at least one of polyacrylic acid, polystyrenesulfonic acid, hydroxyethyl cellulose, polyisoprenesulfonic acid, polyvinyl pyrrolidone and pullulan.    
     
     
         19 . The pattern formation method of  claim 6 , 
 wherein said liquid is water or perfluoropolyether.    
     
     
         20 . The pattern formation method of  claim 7 , 
 wherein said liquid is perfluoropolyether.    
     
     
         21 . The pattern formation method of  claim 8 , 
 wherein said liquid is perfluoropolyether.    
     
     
         22 . The pattern formation method of  claim 3 , 
 wherein said exposing light is KrF excimer laser, ArF excimer laser, F 2  laser, ArKr laser, Ar 2  laser, extreme UV of a wavelength band not shorter than 1 nm and not longer than 30 nm, or electron beams.    
     
     
         23 . The pattern formation method of  claim 4 , 
 wherein said exposing light is KrF excimer laser, ArF excimer laser, F 2  laser, ArKr laser, Ar 2  laser, extreme UV of a wavelength band not shorter than 1 nm and not longer than 30 nm, or electron beams.    
     
     
         24 . The pattern formation method of  claim 5 , 
 wherein said exposing light is KrF excimer laser, ArF excimer laser, F 2  laser, ArKr laser, Ar 2  laser, extreme UV of a wavelength band not shorter than 1 nm and not longer than 30 nm, or electron beams.    
     
     
         25 . The pattern formation method of  claim 6 , 
 wherein said exposing light is KrF excimer laser, ArF excimer laser, F 2  laser, ArKr laser or Ar 2  laser.    
     
     
         26 . The pattern formation method of  claim 7 , 
 wherein said exposing light is KrF excimer laser, ArF excimer laser, F 2  laser, ArKr laser or Ar 2  laser.    
     
     
         27 . The pattern formation method of  claim 8 , 
 wherein said exposing light is KrF excimer laser, ArF excimer laser, F 2  laser, ArKr laser or Ar 2  laser.