US2005161729A1PendingUtilityA1

Flash memory cell and method of manufacturing the same

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Assignee: HYNIX SEMICONDUCTOR INCPriority: Dec 22, 2001Filed: Mar 15, 2005Published: Jul 28, 2005
Est. expiryDec 22, 2021(expired)· nominal 20-yr term from priority
Inventors:Cha Deok DongKwang Chul Joo
H10D 30/6891H10D 30/686H10B 69/00H10B 41/30
42
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Claims

Abstract

The present invention relates to a flash memory cell and method of manufacturing the same. The flash memory cell comprises a trench for defining a semiconductor substrate to be an active region and an inactive region, a trench insulating film burying the trench and having a given protrusion, an impurity region formed in the active region, a floating gate isolated by the protrusion and having rugged portions, and a dielectric film and a control gate formed on the floating gate. Therefore, the present invention can significantly simplify the process, improve the yield of a product and reduce the manufacturing cost.

Claims

exact text as granted — not AI-modified
1 . A flash memory cell, comprising: 
 a trench for defining a semiconductor substrate to be an active region and an inactive region;    a trench insulating film burying the trench and having a given protrusion;    an impurity region formed in the active region;    a floating gate isolated by the protrusion and having rugged portions; and    a dielectric film and a control gate formed on the floating gate.    
   
   
       2 . The flash memory cell as claimed in  claim 1 , wherein the rugged portions are formed to have a depth of 200 through 400 Å from the top of the floating gate.  
   
   
       3 - 29 . (canceled)

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