Method of plasma etching

Abstract

A method of plasma etching which comprises introducing a gas containing C x F y (X≧2) and CF 4 into a treatment chamber, and forming a plasma of the gas, to thereby subject a coating film in an article to be treated (W) being present in the treatment chamber to plasma etching through a pattern having openings placed on the coating film. The method can be used for carrying out plasma etching with the suppression of etching-stop phenomenon and without the formation of deposits in an etching hole.

1 . A plasma etching method comprising: 
 plasma etching a film on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the film by converting a gas containing C x F y  (X≧2), CF 4  and N 2  introduced into the treatment chamber to a plasma.    
     
     
         2 . The plasma etching method of  claim 1 , wherein the metal compound is a metal nitride.  
     
     
         3 . The plasma etching method of  claim 2 , wherein the metal nitride is TiN.  
     
     
         4 . The plasma etching method of  claim 2 , wherein the metal nitride is TaN.  
     
     
         5 . (canceled)  
     
     
         6 . The plasma etching method of  claim 1 , wherein the gas further includes Ar.  
     
     
         7 . A plasma etching method comprising: 
 plasma etching a SiO 2  film on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the film by converting a gas containing C x F y  (X≧2) and CF 4  introduced into the treatment chamber to a plasma.    
     
     
         8 . A plasma etching method comprising: 
 plasma etching a SiC film on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the film by converting a gas containing C x F y  (X≧2) and CF 4  introduced into the treatment chamber to a plasma.    
     
     
         9 . A plasma etching method comprising: 
 plasma etching a SiOC film on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the film by converting a gas containing C x F y  (X≧2) and CF 4  introduced into the treatment chamber to a plasma.    
     
     
         10 . A plasma etching method comprising: 
 plasma etching a film formed of one among SiO 2 , SiC and SiOC on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the film by converting a gas containing C 4 F 6  and CF 4  introduced into the treatment chamber to a plasma.    
     
     
         11 . The plasma etching method of  claim 10 , wherein the gas has a ratio of C 4 F 6  flow rate to CF 4  flow rate (C 4 F 6  flow rate/CF 4  flow rate) in the range from 0.12 to 0.20.  
     
     
         12 . The plasma etching method of  claim 1 , wherein C x F y  (X≧2) of the gas is C 4 F 8 .  
     
     
         13 . A plasma etching method comprising: 
 plasma etching a film on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the film by converting a gas containing C 5 F 8  and CF 4  introduced into the treatment chamber to a plasma.    
     
     
         14 . A plasma etching method comprising: 
 plasma etching a SiO 2  film disposed on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the SiO 2  film by converting a gas containing C 4 F 6  and N 2  introduced into the treatment chamber to a plasma.    
     
     
         15 . A plasma etching method comprising: 
 plasma etching a SiC film disposed on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the SiC film by converting a gas containing C 4 F 6  and N 2  introduced into the treatment chamber to a plasma.    
     
     
         16 . A plasma etching method comprising: 
 plasma etching a SiOC film disposed on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the SiOC film by converting a gas containing C 4 F 6  and N 2  introduced into the treatment chamber to a plasma.    
     
     
         17 . The plasma etching method of  claim 14 , wherein the metal compound is a metal nitride.  
     
     
         18 . The plasma etching method of  claim 17 , wherein the metal nitride is TiN.  
     
     
         19 . The plasma etching method of  claim 17 , wherein the metal nitride is TaN.  
     
     
         20 . The plasma etching method of  claim 7 , wherein C x F y  (X≧2) of the gas is C 4 F 8 .  
     
     
         21 . The plasma etching method of  claim 8 , wherein C x F y  (X≧2) of the gas is C 4 F 8 .  
     
     
         22 . The plasma etching method of  claim 9 , wherein C x F y  (X≧2) of the gas is C 4 F 8 .