Dry etching method and apparatus

Abstract

A dry etching method and apparatus are provided which are capable of performing deep etching fabrication rapidly on a substrate of an InP-based compound semiconductor. Etching gas is fed into and exhausted from a reaction chamber so that an interior of the chamber is controlled to be under a predetermined pressure. Plasma is then generated in the reaction chamber by application of at least 13.56 MHz high-frequency power to a flat spiral discharge coil or a flat antenna that is provided so as to face an InP-based compound semiconductor substrate placed on a substrate electrode in the reaction chamber, and the substrate is etched while a density of the plasma and ion energy that reaches the substrate are controlled.

1 - 19 . (canceled)  
   
   
       20 . A dry etching apparatus, comprising: 
 a reaction chamber;    a gas feeding device for feeding into said reaction chamber a mixed gas of hydrogen iodide gas and an inert gas, wherein the mixed gas is to be used as an etching gas;    an exhaust device for exhausting gas from said reaction chamber;    a high-frequency power applying device for applying at least 13.56 MHz high-frequency power to a flat spiral discharge coil that is provided so as to face an InP-based compound semiconductor substrate when placed on a substrate electrode within said reaction chamber;    a high-frequency voltage applying device for applying a high-frequency voltage to said substrate electrode; and    a control device for 
 (i) controlling a pressure in said reaction chamber to a predetermined value by causing said gas feeding device to feed the mixed gas into said reaction chamber and by causing said exhaust device to exhaust gas from said reaction chamber,  
 (ii) generating plasma in said reaction chamber by causing said high-frequency power applying device to apply at least 13.56 MHz high-frequency power to said flat spiral discharge coil, and  
 (iii) causing the InP-based compound semiconductor substrate, when on said substrate electrode, to be subjected to etching while controlling a density of the plasma by controlling the high frequency power applied to said flat spiral discharge coil by said high-frequency power applying device, and while independently controlling ion energy reaching the InP-based compound semiconductor substrate by controlling the high-frequency voltage applied to said substrate electrode by said high-frequency voltage applying device.  
   
   
   
       21 . A dry etching apparatus, comprising: 
 a reaction chamber;    a gas feeding device for feeding into the reaction chamber a mixed gas of an inert gas and one of chlorine, hydrogen bromide and hydrogen chloride, wherein the mixed gas is to be used as an etching gas;    an exhaust device for exhausting the reaction chamber;    a high-frequency power applying device for applying at least 13.56 MHz high-frequency power to an antenna that is to face an InP-based compound semiconductor substrate when placed on a substrate electrode within said reaction chamber;    a high-frequency voltage applying device for applying a high-frequency voltage to said substrate electrode; and    a control device for 
 (i) controlling a pressure in said reaction chamber to a predetermined value by causing said gas feeding device to feed the mixed gas into said reaction chamber and by causing said exhaust device to exhaust gas from said reaction chamber,  
 (ii) generating plasma in said reaction chamber by causing said high-frequency power applying device to apply at least 13.56 MHz high-frequency power to said antenna, and  
   (iii) causing the InP-based compound semiconductor substrate, when on said substrate electrode, to be subjected to etching while controlling a density of the plasma by controlling the high-frequency power applied to said antenna by said high-frequency power applying device, and while independently controlling ion energy reaching the InP-based compound semiconductor substrate by controlling the high-frequency voltage applied to said substrate electrode by said high-frequency voltage applying device.    
   
   
       22 - 29 . (canceled)