US2005161077A1PendingUtilityA1
Apparatus for manufacturing photovoltaic elements
Est. expirySep 5, 2016(expired)· nominal 20-yr term from priority
Inventors:Shotaro OkabeYasushi FujiokaMasahiro KanaiAkira SakaiTadashi SawayamaYuzo KohdaTadashi HoriTakahiro Yajima
Y02E10/548H10F 77/166H10F 71/107H10F 71/1035H10F 10/172H10F 71/103H10F 10/17C23C 16/50Y02P70/50Y02E10/547
49
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Claims
Abstract
An apparatus for efficiently and continuously mass-producing a photovoltaic element by a plasma CVD method having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. The apparatus has a first chamber where raw material gas flows from top to bottom. A second chamber is connected to the first chamber by a separating path and causes the raw material gas to flow from bottom to top along the movement direction of the long substrate.
Claims
exact text as granted — not AI-modified1 - 16 . (canceled)
17 . An accumulated film forming apparatus for continuously accumulating a plurality of semiconductor layers on a long substrate by the plasma CVD method, characterized by at least a first accumulation chamber for making an i-type layer having means for making raw material gas flow from the upper part toward the lower part in the direction of movement of said long substrate, and a second accumulation chamber for making a p-type layer on said i-type layer having means for making the raw material gas containing a p-type dopant flow from the lower part toward the upper part in the direction of movement of said long substrate, said first accumulation chamber and said second accumulation chamber being connected together by a separating path.
18 . An accumulated film forming apparatus according to claim 17 , characterized in that the area of an electrode in at least said second accumulation chamber for applying electric power for causing plasma is larger than the area of said long substrate in said accumulation chamber.
19 . An accumulated film forming apparatus according to claim 18 , characterized in that said electrode is fin-shaped.
20 . An accumulated film forming apparatus according to claim 18 , characterized in that said electrode is enclosure-shaped.
21 . An accumulated film forming apparatus according to claim 18 , characterized in that the potential of said electrode is positive relative to said long substrate.
22 . An accumulated film forming apparatus according to claim 17 , characterized in that a portion for supplying said raw material gas into said accumulation chambers has a member for shielding said long substrate from the flow of said raw material gas.
23 - 27 . (canceled)Join the waitlist — get patent alerts
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