Method and apparatus for ALD on a rotary susceptor

Abstract

A chemical vapor deposition method and apparatus is disclosed. The process is carried out in an apparatus having a number reactive zones, each surrounded by a corresponding exhaust zone, all of which are both contained within a buffer zone. Pressure relationships are controlled such that buffer gas from the buffer zone flows into the exhaust zones and reactive gas from the reactive zones flow into the exhaust zones. As a result, cross-contamination of gases between the reactive zones is avoided.

1 . A CVD-ALD apparatus comprising: 
 an outer enclosure;    a first exhaust pipe having a first end located inside the outer enclosure;    a second exhaust pipe having a first end located inside the outer enclosure;    a first reaction enclosure located inside the outer enclosure and in fluid communication with the first exhaust pipe, the first reaction enclosure defining an opening;    a second reaction enclosure located inside the outer enclosure and in fluid communication with the second exhaust pipe, the second reaction enclosure defining an opening;    a susceptor disposed adjacent to the first end of the first exhaust pipe, the first end of the second exhaust pipe, the opening of the first reaction enclosure, and the opening of the second reaction enclosure;    a neutral gas supply;    a means for supplying a first reaction gas to the first reaction enclosure; and    a means for supplying a second reaction gas to the second reaction enclosure.    
   
   
       2 . The apparatus according to  claim 1 , further comprising: 
 a first reaction gas at a first, reactive zone pressure in the first reaction enclosure;    a neutral gas at a second, buffer zone pressure in a buffer zone in the outer enclosure;    a first exhaust gas at a third, exhaust zone pressure in the first exhaust pipe;    a second reaction gas at a fourth, reaction zone pressure in the second reaction enclosure; and    a second exhaust gas at a fifth, exhaust zone pressure in the second exhaust pipe; wherein the second, buffer zone pressure is greater than the third, exhaust zone pressure, the second, buffer zone pressure is greater than the fifth, exhaust zone pressure, the first, reaction zone pressure is greater than the third, exhaust zone pressure, and the fourth, reactive zone pressure is greater than the fifth, exhaust zone pressure.    
   
   
       3 . The apparatus according to  claim 2 , wherein the second, buffer zone pressure is greater than or equal to the first, reactive zone pressure, and the second, buffer zone pressure is greater than the fourth, reactive zone pressure.  
   
   
       4 . The apparatus according to  claim 1 , wherein the first end of the first exhaust pipe and the susceptor define a first conductance slit.  
   
   
       5 . The apparatus according to  claim 4 , wherein the first end of the second exhaust pipe and the susceptor define a second conductance slit.  
   
   
       6 . The apparatus according to  claim 4 , wherein each of the conductance slit has essentially a constant width along the exhaust zone outer periphery.  
   
   
       7 . The apparatus according to  claim 5 , wherein each of the conductance slits has essentially a constant width along the exhaust zone outer periphery.  
   
   
       8 . The apparatus according to  claim 6 , wherein the width of the conductance slit is 0.3-1.5 mm.  
   
   
       9 . The apparatus according to  claim 7 , wherein the width of each conductance slit is 0.3-1.5 mm.  
   
   
       10 . The apparatus according to  claim 1 , wherein the first exhaust pipe and the second exhaust pipe join together outside of the outer enclosure, and the extent of one of the exhaust pipes between its first end and the location where the pipes are joined is at least 0.5 m.  
   
   
       11 . The apparatus according to  claim 1 , wherein the susceptor is rotatably mounted on a spindle.  
   
   
       12 . The apparatus according to  claim 11 , wherein the first gas distribution means and the second gas distribution means each comprise means for distributing gas along the susceptor's rotation axis.  
   
   
       13 . The apparatus according to  claim 1 , wherein a surface of the susceptor defines a plurality of recesses for receiving substrates, the recesses being sized so that the exposed surface of each substrate and the surface of the susceptor are within 0.2 mm of being at the same level.