Method of chemically mechanically polishing substrates

Abstract

The present invention relates to a method of polishing a substrate. The invention more particularly relates to the chemical mechanical polishing of a substrate enhanced by the addition of a refractory metal. A method according to the present disclosure comprises using an oxidizing agent, a refractory metal suspended in a liquid carrier with an optional abrasive to polish a metal-containing substrate. The refractory metal agent can be dissolved ions, particulate material, or both. The present invention further relates to a method of cleaning a polished substrate.

1 . A method for chemically polishing mechanically polishing a metal-containing substrate comprising: 
 providing a substrate having a surface comprising a metal, a metal-containing compound, or both;    providing a polishing composition comprising dissolved tantalum-containing ions and a liquid carrier; and    contacting the substrate surface with the polishing composition under conditions suitable to chemically mechanically polish the substrate surface.    
   
   
       2 . The method of  claim 1  wherein the composition comprises 0.1 ppm to 2% by weight of dissolved tantalum.  
   
   
       3 . The method of  claim 1  wherein the composition comprises 0.5 ppm to about 50 ppm of dissolved tantalum.  
   
   
       4 . The method of  claim 1  wherein the composition comprises 51 ppm to about 500 ppm of dissolved tantalum.  
   
   
       5 . The method of  claim 1  wherein the composition further comprises an oxidizer.  
   
   
       6 . The method of  claim 1  wherein the composition further comprises an abrasive.  
   
   
       7 . The method of  claim 1  wherein the substrate comprises copper.  
   
   
       8 . A method for chemically polishing mechanically polishing a metal-containing substrate comprising: 
 providing a substrate having a surface comprising a metal, a metal-containing compound, or both;    providing a polishing composition comprising dissolved refractory metal-containing    contacting the substrate surface with the polishing composition under conditions suitable to chemically mechanically polish the substrate surface.    
   
   
       9 . The method of  claim 8  wherein the composition comprises 0.1 ppm to 2% by weight of dissolved refractory metal-containing ions, wherein the refractory metal is molybdenum, rhenium, niobium, molybdenum or combinations thereof.  
   
   
       10 . The method of  claim 9  wherein the composition comprises 0.5 ppm to about 50 ppm of refractory metal-containing ions.  
   
   
       11 . The method of  claim 9  wherein the composition comprises 51 ppm to about 500 ppm of dissolved tantalum.  
   
   
       12 . The method of  claim 9  wherein the composition further comprises an oxidizer.  
   
   
       13 . The method of  claim 9  wherein the composition further comprises an abrasive.  
   
   
       14 . The method of  claim 9  wherein the substrate comprises copper.  
   
   
       15 . A method for chemically polishing mechanically polishing a metal-containing substrate comprising: 
 providing a substrate having a surface comprising a metal, a metal-containing compound, or both;    providing a polishing composition comprising dissolved titanium-containing ions and a liquid carrier; and    contacting the substrate surface with the polishing composition under conditions suitable to chemically mechanically polish the substrate surface.    
   
   
       16 . The method of  claim 15  wherein the composition comprises 0.1 ppm to 2% by weight of dissolved titanium.  
   
   
       17 . The method of  claim 15  wherein the composition comprises 0.5 ppm to about 50 ppm of dissolved titanium.  
   
   
       18 . The method of  claim 15  wherein the composition comprises 51 ppm to about 500 ppm of dissolved titanium.  
   
   
       19 . The method of  claim 15  wherein the composition further comprises an oxidizer.  
   
   
       20 . The method of  claim 15  wherein the composition further comprises an abrasive.  
   
   
       21 . The method of  claim 15  wherein the substrate comprises copper.  
   
   
       22 . A method for chemically polishing mechanically polishing a metal-containing substrate comprising: 
 providing a substrate having a surface comprising a metal, a metal-containing compound, or both;    providing a polishing composition comprising tantalum-containing particles and a liquid carrier; and    contacting the substrate surface with the polishing composition under conditions suitable to chemically mechanically polish the substrate surface.    
   
   
       23 . The method of  claim 22  wherein the tantalum-containing particles comprises tantalum nitride, tantalum oxynitrides, or both.  
   
   
       24 . The method of  claim 22  wherein the tantalum-containing particles comprises tantalum carbide, tantalum fluoride, or both.  
   
   
       25 . The method of  claim 22  wherein the tantalum-containing particles comprises a tantalum oxide.  
   
   
       26 . The method of  claim 22  wherein the composition further comprises an oxidizer.  
   
   
       27 . The method of  claim 22  wherein the composition further comprises an abrasive that does not comprise tantalum.  
   
   
       28 . The method of  claim 22  wherein the substrate comprises copper.  
   
   
       29 . A method for chemically polishing mechanically polishing a metal-containing substrate comprising: 
 providing a substrate having a surface comprising a metal, a metal-containing compound, or both;    providing a polishing composition comprising tungsten-containing particles, wherein at least a portion of the tungsten is not tungsten carbide, and a liquid carrier; and    contacting the substrate surface with the polishing composition under conditions suitable to chemically mechanically polish the substrate surface.    
   
   
       30 . The method of  claim 29  wherein the tungsten-containing particles comprises tungsten nitride, tungsten oxynitride, or both.  
   
   
       31 . The method of  claim 29  wherein the tungsten-containing particles comprises tungsten oxide, tungsten fluoride, or both.  
   
   
       32 . The method of  claim 29  wherein the composition further comprises an oxidizer.  
   
   
       33 . The method of  claim 29  wherein the composition further comprises an abrasive that does not comprise tungsten.  
   
   
       34 . The method of  claim 29  wherein the substrate comprises copper.  
   
   
       35 . A method for chemically polishing mechanically polishing a metal-containing substrate comprising: 
 providing a substrate having a surface comprising a metal, a metal-containing compound, or both;    providing a polishing composition comprising refractory-metal-containing particles and a liquid carrier, wherein the refractory metal is molybdenum, rhenium, niobium, molybdenum or combinations thereof; and    contacting the substrate surface with the polishing composition under conditions suitable to chemically mechanically polish the substrate surface.    
   
   
       36 . The method of  claim 35  wherein the refractory-metal-containing particles comprises refractory-metal-nitride, refractory-metal-oxynitride, or both.  
   
   
       37 . The method of  claim 35  wherein the refractory-metal-containing particles comprises refractory-metal-oxide, refractory-metal-carbide, refractory-metal-fluoride, or any combination thereof.  
   
   
       38 . The method of  claim 35  wherein the composition further comprises an oxidizer.  
   
   
       39 . The method of  claim 35  wherein the composition further comprises an abrasive that does not comprise a refractory metal.  
   
   
       40 . The method of  claim 35  wherein the substrate comprises copper.  
   
   
       41 . A method for chemically polishing mechanically polishing a metal-containing substrate comprising: 
 providing a substrate having a surface comprising a metal, a metal-containing compound, or both;    providing a polishing composition comprising titanium-containing particles and a liquid carrier, wherein at least a portion of the titanium is not a titanium oxide; and    contacting the substrate surface with the polishing composition under conditions suitable to chemically mechanically polish the substrate surface.    
   
   
       42 . The method of  claim 41  wherein the titanium-containing particles comprises titanium-nitride, titanium-oxynitride, or both.  
   
   
       43 . The method of  claim 41  wherein the titanium-containing particles comprises titanium-carbide, titanium-fluoride, or any combination thereof.  
   
   
       44 . The method of  claim 41  wherein the composition further comprises an oxidizer.  
   
   
       45 . The method of  claim 41  wherein the composition further comprises an abrasive that does not comprise titanium.  
   
   
       46 . The method of  claim 41  wherein the substrate comprises copper.  
   
   
       47 . A method for chemically polishing mechanically polishing a metal-containing substrate comprising: 
 providing a substrate having a surface comprising a metal, a metal-containing compound, or both;    providing a polishing composition comprising lanthanide-metal-containing particles and a liquid carrier; and    contacting the substrate surface with the polishing composition under conditions suitable to chemically mechanically polish the substrate surface.    
   
   
       48 . The method of  claim 47  wherein the lanthanide-metal-containing particles comprises a nitride, an oxynitride, or both, of lanthanum, ytterbium, lutetium, or combinations thereof.  
   
   
       49 . The method of  claim 47  wherein the lanthanide-metal-containing particles comprises a carbide, a fluoride, an oxide, or combinations thereof, of lanthanum, ytterbium, lutetium, or combinations thereof.  
   
   
       50 . The method of  claim 47  wherein the composition further comprises an oxidizer.  
   
   
       51 . The method of  claim 47  wherein the composition further comprises an abrasive that does not comprise titanium.  
   
   
       52 . A method for chemically polishing mechanically polishing a metal-containing substrate comprising: 
 providing a substrate having a surface comprising a metal, a metal-containing compound, or both;    providing a polishing composition comprising rare-earth-containing particles and a liquid carrier, wherein the rare earth comprises cerium, praseodymium, or combinations thereof, and wherein at least a portion of the rare earth is not a rare earth oxide; and    contacting the substrate surface with the polishing composition under conditions suitable to chemically mechanically polish the substrate surface.    
   
   
       53 . The method of  claim 47  wherein the rare-earth-metal-containing particles comprises a nitride, an oxynitride, or both, of cerium, praseodymium, or combinations thereof.  
   
   
       54 . The method of  claim 47  wherein the composition further comprises an oxidizer, and wherein the rare-earth-metal-containing particles are mixed at point of use with the oxidizer.  
   
   
       55 . A method of cleaning a metal-containing substrate that had previously undergone a polishing process comprising the step of contacting the polished metal-containing substrate with a composition comprising an oxidizing agent, a dissolved refractory metal-containing ion, and a liquid carrier at a temperature and for a time sufficient to clean the polished metal-containing substrate.  
   
   
       56 . A method of cleaning a metal-containing substrate that had previously undergone an etching process, and having organometallic etch residue thereon, comprising the step of contacting the etched metal-containing substrate with a composition comprising an oxidizing agent, a dissolved refractory metal-containing ion, and a liquid carrier at a temperature and for a time sufficient to clean the polished metal-containing substrate.